Abstract: A mask including: a transparent substrate and a light blocking layer thereon. The transparent substrate includes a first transmitting portion and a second transmitting portion each configured to pass light, and a light blocking portion configured to block light. The first transmitting portion includes a first transmitting region configured to pass light and a first light blocking region configured to block light, and area centers of the first transmitting region and the first light blocking region substantially coincide. The second transmitting portion includes a second transmitting region configured to pass light and a second light blocking region configured to block light, and area centers of the second transmitting region and the second light blocking region substantially coincide, so that the first transmitting portion is configured to pass light of a greater intensity and the second transmitting portion is configured to pass light of a lesser intensity.

Abstract: A method of fabricating a semiconductor device includes preparing a layout of the semiconductor device, obtaining contrast of an exposure image of the layout through a simulation under a condition of using a crosspole illumination system, separating the layout into a plurality of sub-layouts based on the contrast of the exposure image, forming a photomask having a mask pattern corresponding to the plurality of sub-layouts, and performing an exposure process using the photomask under an exposure condition of using a dipole illumination system.

Abstract: A photoacid generator represented by Formula 1 or Formula 2: wherein R1, R2, and R3 are each independently a C1-C10 alkyl group, X is a C3-C20 alicyclic hydrocarbon group forming a ring with S+, and at least one CH2 group in the alicyclic hydrocarbon group may be replaced with at least one selected from the group consisting of S, O, NH, a carbonyl group, and R5—S+A?, where R5 is a C1-C10 alkyl group, and A? is a counter-ion.

Abstract: A method of forming a layout of a photomask includes receiving a layout of a mask pattern, obtaining image parameters of a two-dimensional (2D) layout mask from a simulation, obtaining image parameters of a three-dimensional (3D) layout mask from a simulation, and obtaining differences between the image parameters of the 2D and 3D masks. The differences between the image parameters of the 2D and 3D masks can be compensated by convolving a probability function with respect to an open area, represented by a visible kernel function, with a mask function to produce a first function, convolving a probability function with respect to a blocked area, represented by a visible kernel function, with the mask function to produce a second function, and summing the first function and the second function to produce a compensated vector. The layout of the mask pattern can be corrected using the compensated vector.

Abstract: At least one pattern of a photomask is identified that has a likelihood of causing collapse of a microelectronic device feature that is formed using the photomask, due to surface tension of a solution that is applied to the feature during manufacture of the microelectronic device. The patterns of the photomask are then modified to reduce the likelihood of the collapse. The photomask may be formed and the photomask may be used to manufacture microelectronic devices. Related methods, systems, devices and computer program products are described.

Abstract: A method of patterning a substrate includes processing first regions of the substrate to form a first pattern, the first regions defining a second region between adjacent first regions, arranging a block copolymer on the first and second regions, the block copolymer including a first component and a second component, the first component of the block copolymer being aligned on the first regions, and selectively removing one of the first component and the second component of the block copolymer to form a second pattern having a pitch that is less than a pitch of a first region and an adjacent second region.

Abstract: A method of manufacturing a semiconductor device includes dividing a design pattern layout into a repetitive pattern part and a non-repetitive pattern part, obtaining an optical proximity correction (OPC) bias from an extracted portion, the extracted portion being a partial portion of the repetitive pattern part, applying the OPC bias obtained from the extracted portion equally to the extracted portion and other portions of the repetitive pattern part so as to form a first corrected layout in which corrected layouts of the other portions are the same as that of the extracted portion, and forming a photomask in all portions of the repetitive pattern part according to the first corrected layout.

Abstract: Methods and apparatus are disclosed that arrange mask patterns in response to the contribution of a second pattern to image intensity. In some methods of arranging mask patterns, a distribution of functions h(??x) is obtained which represents the contribution of a second pattern to image intensity on a first pattern. Neighboring regions of the first pattern are discretized into finite regions, and the distribution of the functions h(??x) is replaced with representative values h(x,?) of the discretized regions. A position of the second pattern is determined using polygonal regions having the same h(x,?). As described, the term x is the position of the first pattern and the term ? is the position of the assist.

Abstract: A method of forming a line/space pattern includes forming a plurality of first pattern structures on a layer of hard mask material disposed on a substrate, forming a plurality of second pattern structures along sidewalls of the first pattern structures, removing the first pattern structures such that the second pattern structures stand alone on the layer of hard mask material, forming a first mask that exposes a location where a space of the line/space pattern to be formed is to have a width greater than the distance between adjacent ones of the second pattern structures, removing those of the second pattern structures which are exposed by the first mask such that others of the second pattern structures remain on the layer of hard mask material, forming a second mask that covers a location where a line of the line/space pattern to be formed is to have a width that is greater than the widths of the second pattern structures, forming a hard mask by etching the hard mask material layer using the second mask and

Abstract: A method of forming fine patterns of a semiconductor device by using carbon (C)-containing films includes forming an etching target film on a substrate including first and second regions; forming a plurality of first C-containing film patterns on the etching target film in the first region; forming a buffer layer which covers top and side surfaces of the plurality of first C-containing film patterns; forming a second C-containing film; removing the second C-containing film in the second region; exposing the plurality of first C-containing film patterns by removing a portion of the buffer layer in the first and second regions; and etching the etching target film by using the plurality of first C-containing film patterns, and portions of the second C-containing film which remain in the first region, as an etching mask.

Abstract: A method of fabricating a semiconductor device includes preparing a layout of the semiconductor device, obtaining contrast of an exposure image of the layout through a simulation under a condition of using a crosspole illumination system, separating the layout into a plurality of sub-layouts based on the contrast of the exposure image, forming a photomask having a mask pattern corresponding to the plurality of sub-layouts, and performing an exposure process using the photomask under an exposure condition of using a dipole illumination system.

Abstract: A method of forming a layout of a photomask using optical proximity correction (OPC) includes: receiving a layout of a mask pattern; obtaining image parameters of a two-dimensional (2D) layout mask from a simulation; obtaining image parameters of a three-dimensional (3D) layout mask from a simulation; obtaining differences between the image parameters of the 2D and 3D masks; and performing optical proximity correction (OPC) on the 2D mask to compensate for the differences between the image parameters of the 2D and 3D masks by using a visible kernel with respect to the 2D mask.

Abstract: At least one pattern of a photomask is identified that has a likelihood of causing collapse of a microelectronic device feature that is formed using the photomask, due to surface tension of a solution that is applied to the feature during manufacture of the microelectronic device. The patterns of the photomask are then modified to reduce the likelihood of the collapse. The photomask may be formed and the photomask may be used to manufacture microelectronic devices. Related methods, systems, devices and computer program products are described.

Abstract: A method of forming a mask pattern, a method of forming a minute pattern, and a method of manufacturing a semiconductor device using the same, the method of forming the mask pattern including forming first mask patterns on a substrate; forming first preliminary capping layers on the first mask patterns; irradiating energy to the first preliminary capping patterns to form second preliminary capping layers ionically bonded with the first mask patterns; applying an acid to the second preliminary capping layers to form capping layers; forming a second mask layer between the capping layers, the second mask layer having a solubility lower than that of the capping layers; and removing the capping layers to form second mask patterns.

Abstract: A method of forming fine patterns of a semiconductor device includes forming a plurality of first mask patterns on a substrate such that the plurality of first mask patterns are separated from one another by a space located therebetween, in a direction parallel to a main surface of the substrate, forming a plurality of capping films formed of a first material having a first solubility in a solvent on sidewalls and a top surface of the plurality of first mask patterns. The method further includes forming a second mask layer formed of a second material having a second solubility in the solvent, which is less than the first solubility, so as to fill the space located between the plurality of first mask patterns, and forming a plurality of second mask patterns corresponding to residual portions of the second mask layer which remain in the space located between the plurality of first mask patterns, after removing the plurality of capping films and a portion of the second mask layer using the solvent.

Abstract: A method of patterning a substrate includes processing first regions of the substrate to form a first pattern, the first regions defining a second region between adjacent first regions, arranging a block copolymer on the first and second regions, the block copolymer including a first component and a second component, the first component of the block copolymer being aligned on the first regions, and selectively removing one of the first component and the second component of the block copolymer to form a second pattern having a pitch that is less than a pitch of a first region and an adjacent second region.

Abstract: A method of manufacturing a semiconductor device includes dividing a design pattern layout into a repetitive pattern part and a non-repetitive pattern part, obtaining an optical proximity correction (OPC) bias from an extracted portion, the extracted portion being a partial portion of the repetitive pattern part, applying the OPC bias obtained from the extracted portion equally to the extracted portion and other portions of the repetitive pattern part so as to form a first corrected layout in which corrected layouts of the other portions are the same as that of the extracted portion, and forming a photomask in all portions of the repetitive pattern part according to the first corrected layout.

Abstract: A method of patterning a substrate includes processing first regions of the substrate to form a first pattern, the first regions defining a second region between adjacent first regions, arranging a block copolymer on the first and second regions, the block copolymer including a first component and a second component, the first component of the block copolymer being aligned on the first regions, and selectively removing one of the first component and the second component of the block copolymer to form a second pattern having a pitch that is less than a pitch of a first region and an adjacent second region.

Abstract: A method of manufacturing a semiconductor device includes forming a first mask pattern on a substrate by using a material including a polymer having a protection group de-protectable by an acid, the first mask pattern having a plurality of holes; forming a capping layer on an exposed surface of the first mask pattern, the capping layer including an acid source; diffusing the acid source into the first mask pattern so that the protection group becomes de-protectable from the polymer in the first mask pattern; forming a second mask layer on the capping layer, the second mask layer separate from the first mask pattern and filling the plurality of holes in the first mask pattern; and forming a plurality of second mask patterns in the plurality of holes by removing the capping layer and the first mask pattern.

Abstract: A method of fabricating a photomask may include forming a light-shielding layer and a first resist film on a substrate, forming a first resist pattern by exposing first exposed regions of the first resist film to a first exposure source that may have a first energy, forming a first light shielding pattern by etching the selectively exposed light-shielding layer by using the first resist pattern as an etching mask, removing the first resist pattern, forming a second resist film on the first light-shielding layer, exposing second exposed regions of the second resist film that may have a desired pattern shape to a second exposure source that may have a second energy, forming a second light shielding pattern by etching the selectively exposed first light shielding pattern by using the second resist pattern as an etching mask, and removing the second resist pattern.