Abstract: A wafer annealing apparatus includes a gas supply unit located on one side of the wafer annealing apparatus and configured to supply high-temperature gases to transfer heat to wafers loaded inside the wafer annealing apparatus, a rotation driving unit comprising a rotation controller and configured to rotate a wafer support unit loaded with wafers, and a gas release unit located on the other side of the wafer annealing apparatus and configured to release the high-temperature gases fed to the wafer annealing apparatus. The rotation controller includes at least one processor configured to transmit a control signal to the rotation driving unit and control a rotation cycle and a rotation angle of the rotation driving unit.

Abstract: A semiconductor device includes a semiconductor substrate; an oxide film formed on the semiconductor substrate; a gate poly formed on a portion of the oxide film; a spacer formed to surround the gate poly; a dielectric film formed on the spacer; a first barrier metal formed on side surfaces of the oxide film, the gate poly, the spacer, and the dielectric film which are stacked, a surface of the semiconductor substrate, and a top surface of the dielectric film; a second barrier metal formed on the first barrier metal; a metal plug formed in a cavity formed by the second barrier metal; a metal layer formed on the second barrier metal and the metal plug; and a passivation layer formed on the metal layer. A thickness of the first barrier metal formed on the surface of the dielectric film is in a range of from 15 nm to 25 nm.