Abstract: The present disclosure relates to semiconductor device. One example semiconductor device includes a plurality of unit pixels, where each unit pixel of the plurality of unit pixels includes a pair of transfer gates including a first transfer gate and a second transfer gate, a photoelectric converter, and a floating diffusion region spaced apart from the photoelectric converter. The first transfer gate and the second transfer gate are disposed asymmetrically with respect to the photoelectric converter and the floating diffusion region.

Abstract: An image sensor that includes a substrate including a photoelectric conversion region, a semiconductor pattern on the substrate, a gate electrode on the semiconductor pattern, and a gate insulating layer between the semiconductor pattern and the gate electrode. The semiconductor pattern includes a first sub pattern including a first source/drain region, a second sub pattern including a second source/drain region, and a third sub pattern between the first sub pattern and the second sub pattern. The gate electrode is on the third sub pattern. The first sub pattern, the second sub pattern, and the third sub pattern extend along different directions.

Abstract: An image sensor includes a dual vertical gate including two vertical portions apart from each other by an isolation area in a first direction and vertically extending into a substrate, a connection portion configured to connect the two vertical portions to each other on the two vertical portions, and a device isolation layer on side surfaces of the vertical portions in the first direction, wherein each of the two vertical portions includes an upper vertical portion and a lower vertical portion, a sidewall of the upper vertical portion forms a first inclination angle with a line extending in the first direction, a sidewall of the lower vertical portion forms a second inclination angle with the line extending in the first direction, and the first inclination angle is different from the second inclination angle.

Abstract: An image sensor includes a substrate including first and second pixel regions adjacent to each other, the substrate including first and second surfaces opposite to each other, a pixel isolation pattern in the substrate to define the first and second pixel regions, a transfer gate on the first surface of the substrate of the first pixel region, a floating diffusion region adjacent to a side of the transfer gate, a first ground dopant region adjacent to the first surface of the substrate in the first pixel region, and a second ground dopant region adjacent to the first surface of the substrate in the second pixel region. A bottom surface of the first ground dopant region is located at a lower level than a bottom surface of the floating diffusion region.

Abstract: An image sensor includes a substrate having a pixel region in which an active region having a locally asymmetric fin region limited by a locally cutout space is defined and a transistor provided in the pixel region. The transistor includes a horizontal gate portion provided on the active region and a vertical gate portion filling the locally cutout space and facing one of fin sidewalls of the locally asymmetric fin region. Distances of the source region and drain region formed in the active region from the locally asymmetric fin region are different from each other. An electronic system includes at least one camera module including an image sensor and a processor configured to process image data provided from the at least one camera module.

Abstract: A semiconductor device includes a semiconductor substrate having a first conductivity type, an epitaxial layer having a second conductivity type, an isolation area in the epitaxial layer to define an active area of the semiconductor substrate, a body area having a first conductivity type and a drift area having a second conductivity type adjacent to each other in the epitaxial layer, a LOCOS insulating layer in the drift area and surrounded by the drift area, a drain area adjacent to a side part of the LOCOS insulating layer and surrounded by the drift area, a body contact area and a source area in the body area and surrounded by the body area, and a gate area overlapping the drift area and a part of the LOCOS insulating layer from a direction of the body area.

Abstract: A semiconductor device includes a semiconductor substrate having a first conductivity type, an epitaxial layer having a second conductivity type, an isolation area in the epitaxial layer to define an active area of the semiconductor substrate, a body area having a first conductivity type and a drift area having a second conductivity type adjacent to each other in the epitaxial layer, a LOCOS insulating layer in the drift area and surrounded by the drift area, a drain area adjacent to a side part of the LOCOS insulating layer and surrounded by the drift area, a body contact area and a source area in the body area and surrounded by the body area, and a gate area overlapping the drift area and a part of the LOCOS insulating layer from a direction of the body area.