Patents by Inventor Seongjin MUN

Seongjin MUN has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Patent number: 11907635
    Abstract: A modeling circuit of a field effect transistor includes a first field effect transistor, a first bipolar transistor, a second bipolar transistor and a substrate resistor. The first bipolar transistor has a collector electrode connected to a first node corresponding to a first electrode of the first field effect transistor, an emitter electrode connected to a second node corresponding to a second electrode of the first field effect transistor, and a base electrode. The second bipolar transistor has a collector electrode connected to the second node, an emitter electrode connected to the first node, and a base electrode connected to the base electrode of the first bipolar transistor. The substrate resistor is connected between the base electrodes of the first and second bipolar transistors and a first surface of a semiconductor substrate on which the first field effect transistor is formed.
    Type: Grant
    Filed: August 2, 2021
    Date of Patent: February 20, 2024
    Assignee: Samsung Electronics Co., Ltd.
    Inventors: Seongjin Mun, Kiyoung Moon, Hyein Lee
  • Publication number: 20220164516
    Abstract: A modeling circuit of a field effect transistor includes a first field effect transistor, a first bipolar transistor, a second bipolar transistor and a substrate resistor. The first bipolar transistor has a collector electrode connected to a first node corresponding to a first electrode of the first field effect transistor, an emitter electrode connected to a second node corresponding to a second electrode of the first field effect transistor, and a base electrode. The second bipolar transistor has a collector electrode connected to the second node, an emitter electrode connected to the first node, and a base electrode connected to the base electrode of the first bipolar transistor. The substrate resistor is connected between the base electrodes of the first and second bipolar transistors and a first surface of a semiconductor substrate on which the first field effect transistor is formed.
    Type: Application
    Filed: August 2, 2021
    Publication date: May 26, 2022
    Applicant: Samsung Electronics Co., Ltd.
    Inventors: Seongjin MUN, Kiyoung MOON, Hyein LEE
  • Publication number: 20210265844
    Abstract: A battery system includes: a first battery module including a plurality of first battery cells; a second battery module including a plurality of second battery cells; a battery disconnection unit connected between the first battery module and the second battery module, the battery disconnection unit including: a first main switch connected in series between the plurality of first battery cells and the plurality of second battery cells; and a precharge switch and a precharge resistor connected in series with each other and connected in parallel with the first main switch.
    Type: Application
    Filed: February 22, 2021
    Publication date: August 26, 2021
    Inventors: Peelsik JEON, Inbeom JEON, Seongjin MUN