Abstract: In an aspect, an organic light-emitting diode, a method of manufacturing the same, and a method of forming a material layer are provided.

Abstract: Provided is an organic light emitting diode that is highly efficient and has a long lifespan. The organic light emitting diode includes a carbazole-based compound for improving light emission efficiency. In certain embodiments an electron transport layer can include an anthraces-based compound. The organic light emitting diode may be included in a flat display diode including a thin film transistor (TFT).

Abstract: An organic light-emitting diode includes: a substrate; a first electrode; a second electrode; an emission layer between the first electrode and the second electrode; and a hole blocking layer between the emission layer and the second electrode. The hole blocking layer includes a first layer including a first material and a second material, and a second layer formed on the first layer and including the first material. The first material includes a hole blocking material having a highest occupied molecular orbital (HOMO) energy level in the range of about 5.5 to about 6.9 eV, and the second material includes a green or red phosphorescent host material.

Abstract: An organic light emitting diode display includes a first substrate, an organic light emitting diode on the first substrate, a capping layer on the organic light emitting diode. The capping layer includes a first surface facing the organic light emitting diode and a second surface opposite the first surface. The capping layer has a gradient of refractive index that varies along a thickness direction from the first surface toward the second surface.

Abstract: Provided is an organic light emitting diode that is highly efficient and has a long lifespan. The organic light emitting diode includes a carbazole-based compound for improving light emission efficiency. In certain embodiments an electron transport layer can include an anthraces-based compound. The organic light emitting diode may be included in a flat display diode including a thin film transistor (TFT).

Abstract: A thin-film deposition apparatus includes a deposition source, which ejects deposition vapors toward a substrate via an ejection hole, and an angle restricting plate, which is arranged adjacent to the ejection hole so as to restrict, within a set range, an angle of ejecting the deposition vapors from the ejection hole. The angle restricting plate includes a fixed restricting plate, which is fixed with respect to the ejection hole, and a movable restricting plate, which is movable with respect to the ejection hole.

Abstract: In an aspect, an organic light-emitting diode, a method of manufacturing the same, and a method of forming a material layer are provided.

Abstract: An organic light-emitting display device may include a substrate; a plurality of thin film transistors (TFTs) on the substrate; a plurality of first electrodes respectively on the TFTs; a pixel-defining layer between the first electrodes, the pixel-defining layer including a covered portion and an uncovered portion; a plurality of organic layers respectively on the first electrodes, each organic layer including an emission layer; a second electrode covering at least a part of the organic layers and the pixel-defining layer, a portion of the pixel-defining layer covered by the second electrode defining the covered portion, wherein at least one outgassing hole is in the uncovered portion of the pixel-defining layer, the uncovered portion being an exposed area of the pixel-defining layer.

Abstract: An organic light-emitting display device may include a substrate; a plurality of thin film transistors (TFTs) on the substrate; a plurality of first electrodes respectively on the TFTs; a pixel-defining layer between the first electrodes, the pixel-defining layer including a covered portion and an uncovered portion; a plurality of organic layers respectively on the first electrodes, each organic layer including an emission layer; a second electrode covering at least a part of the organic layers and the pixel-defining layer, a portion of the pixel-defining layer covered by the second electrode defining the covered portion, wherein at least one outgassing hole is in the uncovered portion of the pixel-defining layer, the uncovered portion being an exposed area of the pixel-defining layer.

Abstract: An organic light-emitting diode includes: a substrate; a first electrode; a second electrode; an emission layer between the first electrode and the second electrode; and a hole blocking layer between the emission layer and the second electrode. The hole blocking layer includes a first layer including a first material and a second material, and a second layer formed on the first layer and including the first material. The first material includes a hole blocking material having a highest occupied molecular orbital (HOMO) energy level in the range of about 5.5 to about 6.9 eV, and the second material includes a green or red phosphorescent host material.

Abstract: An organic light emitting diode (OLED) and a method of fabricating the same are provided. In the OLED, a second electron transport layer having an absolute value of a lowest unoccupied molecular orbital (LUMO) energy level smaller than that of a first electron transport layer is formed between a second electrode and the first electron transport layer, so that the second electron transport layer can suppress injection and transport of electrons under a low voltage condition to maintain a low current density. Accordingly, it is possible to prevent (or block) an element from emitting light when representing the color black. The OLED includes an emission layer on the first electrode, the first electron transport layer on the emission layer, the second electron transport layer on the first electron transport layer, and the second electrode on the second electron transport layer.

Abstract: An organic light emitting diode (OLED) and a method of fabricating the same are provided. In the OLED, a second electron transport layer having an absolute value of a lowest unoccupied molecular orbital (LUMO) energy level smaller than that of a first electron transport layer is formed between a second electrode and the first electron transport layer, so that the second electron transport layer can suppress injection and transport of electrons under a low voltage condition to maintain a low current density. Accordingly, it is possible to prevent (or block) an element from emitting light when representing the color black. The OLED includes an emission layer on the first electrode, the first electron transport layer on the emission layer, the second electron transport layer on the first electron transport layer, and the second electrode on the second electron transport layer.