Abstract: A method for fabricating a semiconductor device includes: forming a gate structure including a source side and a drain side over a substrate, wherein a dielectric material and a columnar crystal grain material are stacked over the substrate; doping a chemical species on the drain side of the gate structure; and exposing the gate structure doped with the chemical species to a re-growth process in order to thicken the dielectric material on the drain side of the gate structure.

Abstract: A method for fabricating a semiconductor device includes: forming a gate structure including a source side and a drain side over a substrate, wherein a dielectric material and a columnar crystal grain material are stacked over the substrate; doping a chemical species on the drain side of the gate structure; and exposing the gate structure doped with the chemical species to a re-growth process in order to thicken the dielectric material on the drain side of the gate structure.

Abstract: A display according to various embodiments of the present invention may comprise: a touchscreen panel; a display panel disposed under the touchscreen panel and including a first flexible substrate; a drive circuit for driving the touchscreen panel or the display panel; and a second flexible substrate extending outward from the touchscreen panel in a partial layer of the touchscreen panel, wherein the second flexible substrate comprises: a drive circuit area in which the drive circuit is disposed; one or more first wirings connected to the drive circuit and the touchscreen panel; and a bending area which is bent with respect to the touchscreen panel. Various other embodiments may also be possible.

Abstract: A method for fabricating a semiconductor device includes: forming a gate structure including a source side and a drain side over a substrate, wherein a dielectric material and a columnar crystal grain material are stacked over the substrate; doping a chemical species on the drain side of the gate structure; and exposing the gate structure doped with the chemical species to a re-growth process in order to thicken the dielectric material on the drain side of the gate structure.

Abstract: A display according to various embodiments of the present invention may comprise: a touchscreen panel; a display panel disposed under the touchscreen panel and including a first flexible substrate; a drive circuit for driving the touchscreen panel or the display panel; and a second flexible substrate extending outward from the touchscreen panel in a partial layer of the touchscreen panel, wherein the second flexible substrate comprises: a drive circuit area in which the drive circuit is disposed; one or more first wirings connected to the drive circuit and the touchscreen panel; and a bending area which is bent with respect to the touchscreen panel. Various other embodiments may also be possible.

Abstract: A method for fabricating a semiconductor device includes: forming a gate structure including a source side and a drain side over a substrate, wherein a dielectric material and a columnar crystal grain material are stacked over the substrate; doping a chemical species on the drain side of the gate structure; and exposing the gate structure doped with the chemical species to a re-growth process in order to thicken the dielectric material on the drain side of the gate structure.