Abstract: This invention provides an electroluminescence device comprising an indirect bandgap semiconductor layer, such as silicon or germanium, having a local conduction-band minimum at the ?-point in an E-k diagram for using as a light emitting layer, and a direct bandgap semiconductor layer formed by a heterojunction on the indirect bandgap semiconductor layer for using as an electron supply means transporting electrons from a ?-valley to a ?-valley when a forward-biased voltage is applied, wherein a light emission is occurred by recombining the electrons transported to the ?-valley of the indirect bandgap semiconductor layer with holes located at a valance band maximum of the indirect bandgap semiconductor layer.