Abstract: The present invention provides serum paraoxonase 1 protein as a biomarker useful for early diagnosis of lung cancer.

Abstract: The present invention provides a silicon-compatible compound junctionless field effect transistor enabled to be compatible to a bulk silicon substrate for substituting an expensive SOI substrate, to form a blocking semiconductor layer between a silicon substrate and an active layer by a semiconductor material having a specific difference of energy bandgap from that of the active layer to substitute a prior buried oxide for blocking a leakage current at an off-operation time and to form the active layer by a semiconductor layer having electron or hole mobility higher than that of silicon, and to operate perfectly as a junctionless device though the dopant concentration of the active layer is much lower than the prior junctionless device.

Abstract: The present invention relates to high transmission green dye for LCD, dye dispersion comprising the dye, coloring composite comprising the dye dispersion, color filter comprising the coloring composite, and synthetic method thereof.

Abstract: This invention provides a 3D stacked NAND flash memory array and operation method thereof enabling to operate by LSM (a layer selection by multi-level operation) and to get rid of the waste of unnecessary areas by minimizing the number of SSLs needed for a layer selection though the number of layers vertically stacked is increased.

Abstract: This invention provides an electroluminescence device comprising an indirect bandgap semiconductor layer, such as silicon or germanium, having a local conduction-band minimum at the ?-point in an E-k diagram for using as a light emitting layer, and a direct bandgap semiconductor layer formed by a heterojunction on the indirect bandgap semiconductor layer for using as an electron supply means transporting electrons from a ?-valley to a ?-valley when a forward-biased voltage is applied, wherein a light emission is occurred by recombining the electrons transported to the ?-valley of the indirect bandgap semiconductor layer with holes located at a valance band maximum of the indirect bandgap semiconductor layer.