Patents by Inventor Seoul Semiconductor Co., Ltd.

Seoul Semiconductor Co., Ltd. has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Publication number: 20130146927
    Abstract: A method of forming a phosphor coating layer on a light emitting diode (LED) chip using electrophoresis includes separating phosphor particles in a suspension according to a particle size, and coating the phosphor particles on a surface of the LED chip by sequentially depositing the separated phosphor particles on the surface of the LED chip according to the particle size. An apparatus to form a phosphor coating layer on an LED chip includes an electrophoresis bath to accommodate a suspension containing phosphor particles separated into layers according to a particle size, and electrodes disposed inside the electrophoresis bath. The electrodes may include a cathode electrode on which the LED chip may be arranged, and an anode electrode.
    Type: Application
    Filed: February 8, 2013
    Publication date: June 13, 2013
    Applicant: Seoul Semiconductor Co., Ltd.
    Inventor: Seoul Semiconductor Co., Ltd.
  • Publication number: 20130141477
    Abstract: An exemplary embodiment of the present invention discloses a backlight unit having a plurality of light-emitting blocks and a light source driving section. The plurality of light-emitting blocks is arranged in a matrix shape along first and second directions different from each other. Each of the light-emitting blocks includes a light source unit having at least one light-emitting chip to emit light, and a light guiding unit to guide the light. The light source driving section controls the light source unit of the light-emitting blocks to drive the light source unit.
    Type: Application
    Filed: January 25, 2013
    Publication date: June 6, 2013
    Applicant: Seoul Semiconductor Co., Ltd.
    Inventor: Seoul Semiconductor Co., Ltd.
  • Publication number: 20130099274
    Abstract: A heat radiation structure of a light emitting element has leads, each lead having a plurality of leg sections, and a light emitting chip mounted on any one of the leads. The present invention can provide a high-efficiency light emitting element, in which a thermal load is reduced by widening a connecting section through which a lead and a chip seating section of the light emitting element are connected, and the heat generated from a heat source can be more rapidly radiated to the outside. Further, the present invention can also provide a high-efficiency light emitting element, in which heat radiation fins are formed between a stopper and a molding portion of a lead of the light emitting element so that natural convection can occur between the heat radiation fins, and an area in which heat radiation can occur is widened to maximize a heat radiation effect.
    Type: Application
    Filed: December 11, 2012
    Publication date: April 25, 2013
    Applicant: Seoul Semiconductor Co., Ltd.
    Inventor: Seoul Semiconductor Co., Ltd.
  • Publication number: 20130093341
    Abstract: The disclosure relates to an AC LED dimmer and dimming method thereof. The AC LED dimmer includes a rectifier receiving AC voltage from an AC voltage source and full-wave rectifying the AC voltage; a direct current (DC)/DC converter receiving the full-wave rectified voltage from the rectifier, generating a full-wave rectified stepped-up voltage, and generating a pulse enable signal; a pulse width modulation controller receiving the full-wave rectified stepped-up voltage and generating a pulse width modulation signal to dim an AC LED in response to the pulse enable signal; a switch driving the AC LED under control of the pulse width modulation signal, and an electromagnetic interference (EMI) filter to be connected between the AC voltage source and the switch to eliminate electromagnetic interference from the AC voltage source. Accordingly, the dimmer can perform an efficient and linear dimming function and suppress harmonics.
    Type: Application
    Filed: December 3, 2012
    Publication date: April 18, 2013
    Applicant: Seoul Semiconductor Co., Ltd.
    Inventor: Seoul Semiconductor Co., Ltd.
  • Publication number: 20130049574
    Abstract: A light emitting device is disclosed. The light emitting device may include a light emitting diode (LED) for emitting light and phosphor adjacent to the LED. The phosphor may be excitable by light emitted by the LED and may include a first compound having a host lattice comprising first ions and oxygen. In one embodiment, the host lattice may include silicon, the copper ions may be divalent copper ions and first compound may have an Olivin crystal structure, a ?-K2SO4 crystal structure, a trigonal Glaserite (K3Na(SO4)2) or monoclinic Merwinite crystal structure, a tetragonal Ackermanite crystal structure, a tetragonal crystal structure or an orthorhombic crystal structure. In another embodiment, the copper ions do not act as luminescent ions upon excitation with the light emitted by the LED.
    Type: Application
    Filed: October 31, 2012
    Publication date: February 28, 2013
    Applicant: Seoul Semiconductor Co., Ltd.
    Inventor: Seoul Semiconductor Co., Ltd.
  • Publication number: 20130020604
    Abstract: Disclosed herein is a slim LED package. The slim LED package includes first and second lead frames separated from each other, a chip mounting recess formed on one upper surface region of the first lead frame by reducing a thickness of the one upper surface region below other upper surface regions of the first lead frame, an LED chip mounted on a bottom surface of the chip mounting recess and connected with the second lead frame via a bonding wire, and a transparent encapsulation material protecting the LED chip while supporting the first and second lead frames.
    Type: Application
    Filed: September 28, 2012
    Publication date: January 24, 2013
    Applicant: Seoul Semiconductor Co., Ltd.
    Inventor: Seoul Semiconductor Co., Ltd.