Patents by Inventor Seoun-Yong AHN

Seoun-Yong AHN has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Patent number: 9855608
    Abstract: Disclosed is a hard coating film formed on a hard base material such as cemented carbide. The hard coating film has a nanoscale multilayered structure to have improved oxidation resistance and wear resistance. The hard coating film is a hard coating film formed on the base material. The first layer is composed of a TiAl nitride having a composition of Ti1-aAla (0.3?a?0.7), and the second layer has a nanoscale multilayered structure or a structure in which the nanoscale multilayered structure is repeatedly laminated at least two times, the nanoscale multilayered structure including a thin layer A composed of an AlTiSi nitride, a thin layer B, a thin layer C composed of a AlCr nitride, and a thin layer D having thicknesses of 3 nm to 20 nm. The thin film B and the thin film D are composed of a TiAl nitride.
    Type: Grant
    Filed: August 27, 2014
    Date of Patent: January 2, 2018
    Assignee: KORLOY INC.
    Inventors: Je-Hun Park, Seung-Su Ahn, Sung-Gu Lee, Seoun-Yong Ahn, Young Heum Kim
  • Publication number: 20160193662
    Abstract: Disclosed is a hard coating film formed on a hard base material such as cemented carbide. The hard coating film has a nanoscale multilayered structure to have improved oxidation resistance and wear resistance. The hard coating film is a hard coating film formed on the base material. The first layer is composed of a TiAl nitride having a composition of Ti1-aAla (0.3?a?0.7), and the second layer has a nanoscale multilayered structure or a structure in which the nanoscale multilayered structure is repeatedly laminated at least two times, the nanoscale multilayered structure including a thin layer A composed of an AlTiSi nitride, a thin layer B, a thin layer C composed of a AlCr nitride, and a thin layer D having thicknesses of 3 nm to 20 nm. The thin film B and the thin film D are composed of a TiAl nitride.
    Type: Application
    Filed: August 27, 2014
    Publication date: July 7, 2016
    Applicant: KORLOY INC.
    Inventors: Je-Hun PARK, Seung-Su AHN, Sung-Gu LEE, Seoun-Yong AHN, Young Heum KIM