Abstract: A semiconductor manufacturing apparatus according to an embodiment of the present invention comprises: an ultraviolet generating part which is disposed in an ultraviolet generating chamber and generates ultraviolet rays of a target wavelength; a substrate driving part including a chuck which is disposed in a process chamber where a substrate fed therein is treated with ultraviolet rays and supports the fed substrate, and an axis which rotates and moves up and down the chuck; and a window which is disposed between the ultraviolet generating chamber and the process chamber and transmits the generated ultraviolet rays to the process chamber.

Abstract: An avalanche photodiode includes: a first contact layer; a light absorbing layer located on the first contact layer and having a multi-quantum well structure; a first electric field control layer located on the light absorbing layer; and a carrier multiplication layer located on the first electric field control layer. At least one of the multi-quantum well structure includes a well layer that includes Ga1-xAlxN (0?X?0.3), and a barrier layer that includes Ga1-xAlxN (0.7?X?1) and a doping portion doped with a p-type dopant.

Abstract: An avalanche photodiode includes: a first contact layer; a light absorbing layer located on the first contact layer and having a multi-quantum well structure; a first electric field control layer located on the light absorbing layer; and a carrier multiplication layer located on the first electric field control layer. At least one of the multi-quantum well structure includes a well layer that includes Ga1-xAlxN (0?X?0.3), and a barrier layer that includes Ga1-xAlxN (0.7?X?1) and a doping portion doped with a p-type dopant.

Abstract: The embodiment relates to a light emitting device and a light emitting device package, wherein the light emitting device includes a first conduction type semiconductor layer, an active layer formed on the first conduction type semiconductor layer, and a second conduction type semiconductor layer formed on the active layer, wherein the active layer includes a quantum well layer and a quantum barrier layer, and a face direction lattice constant of the first conduction type semiconductor layer or the second conduction type semiconductor layer is greater than the face direction lattice constant of the quantum barrier layer and smaller than the face direction lattice constant of the quantum well layer.

Abstract: Provided is a light emitting device, a method for manufacturing the light emitting device, a light emitting device package, and a lighting system. The light emitting device of the embodiment includes a first conductive semiconductor layer; a second conductive semiconductor layer; and a active layer including a quantum well and a quantum bather between the first conductive semiconductor layer and the second conductive semiconductor layer, wherein the energy band gap of the quantum well is gradually changed into parabolic toward a center of the quantum well.

Abstract: The present disclosure relates to a semiconductor light-emitting device which includes: a light-emitting layer composed of an active layer and of barrier layers formed as superlattice layers and disposed on and under the active layer to relieve stresses applied to the active layer and reduce the sum of electric fields generated in the active layer by the spontaneous polarization and the piezoelectric effect; an N-type contact layer injecting electrons into the light-emitting layer; and a P-type contact layer disposed opposite to the N-type contact layer with respect to the light-emitting layer and injecting holes into the light-emitting layer, wherein the active layer contains InGaN, and the barrier layers are formed by alternately stacking of an AlGaN thin film and an InGaN thin film.

Abstract: Provided is a light emitting device, a method for manufacturing the light emitting device, a light emitting device package, and a lighting system. The light emitting device of the embodiment includes a first conductive semiconductor layer; a second conductive semiconductor layer; and a active layer including a quantum well and a quantum bather between the first conductive semiconductor layer and the second conductive semiconductor layer, wherein the energy band gap of the quantum well is gradually changed into parabolic toward a center of the quantum well.

Abstract: A method of manufacturing a light generating device with required wavelength is disclosed. According to the method, a) a required wavelength is determined. b) A polar angle and an azimuthal angle corresponding to the required wavelength in a nitride semiconductor are determined. Then, c) a nitride semiconductor crystal is grown according to the polar angle and the azimuthal angle. Therefore, a light generating device with required wavelength may be manufactured without adjusting amounts of elements of compound semiconductor.

Abstract: The embodiment relates to a light emitting device and a light emitting device package, wherein the light emitting device includes a first conduction type semiconductor layer, an active layer formed on the first conduction type semiconductor layer, and a second conduction type semiconductor layer formed on the active layer, wherein the active layer includes a quantum well layer and a quantum barrier layer, and a face direction lattice constant of the first conduction type semiconductor layer or the second conduction type semiconductor layer is greater than the face direction lattice constant of the quantum barrier layer and smaller than the face direction lattice constant of the quantum well layer.

Abstract: A method of manufacturing a light generating device with required wavelength is disclosed. According to the method, a) a required wavelength is determined. b) A polar angle and an azimuthal angle corresponding to the required wavelength in a nitride semiconductor are determined. Then, c) a nitride semiconductor crystal is grown according to the polar angle and the azimuthal angle. Therefore, a light generating device with required wavelength may be manufactured without adjusting amounts of elements of compound semiconductor.

Abstract: The present disclosure relates to a semiconductor light-emitting device which includes: a light-emitting layer composed of an active layer and of barrier layers formed as superlattice layers and disposed on and under the active layer to relieve stresses applied to the active layer and reduce the sum of electric fields generated in the active layer by the spontaneous polarization and the piezo; an N-type contact layer injecting electrons into the light-emitting layer; and a P-type contact layer disposed opposite to the N-type contact layer with respect to the light-emitting layer and injecting holes into the light-emitting layer, wherein the active layer contains InGaN, and the barrier layers are formed by alternately stacking of an AlGaN thin film and an InGaN thin film.

Abstract: A light-emitting device is provided. The light-emitting device comprises a light-emitting layer having a first quaternary clad layer with a first material having a first composition ratio and a second material having a second composition ratio, a second quaternary clad layer with a third material having a third composition ratio and a fourth material having a fourth composition ratio, and an activation layer contacted with first clad layer and the second clad layer between them; a first electrode electrically contacted with the light-emitting layer; and, a second electrode electrically contacted with the light-emitting layer, wherein the first quaternary clad layer and the second quaternary clad layer have a predetermined energy band gap by controlling the first, second, third and fourth composition ratio, for removing the piezoelectric field and spontaneous polarization applied to the activation layer.

Abstract: Disclosed are a light-emitting diode and a method for fabricating the same. The ternary or quaternary Group III-V nitride semiconductor light-emitting diode comprises a buffer layer doped with conductive impurities and developed with an orientation inclined toward the axis [1122] at an angle of 40° to 70° with respect to the axis [0001] on a [0001]-oriented substrate, a light-emitting layer arranged on the buffer layer, a first electrode arranged under the buffer layer, and a second electrode arranged on the light-emitting layer, wherein the light-emitting layer includes a first clad layer arranged on the buffer layer, an activation layer arranged on the first clad layer and a second clad layer arranged on the activation layer.

Abstract: The present invention relates to her medecine composition to be contained in sanitary materials for infants, which comprises Sophorae flavescens. Preferably, the composition of the present invention further contains one or more components selected from a group consisting of Phellodendri Cortex, Artemisia Folia, Dictamnus alpus and alum, besides Sophorae flavescens.