Abstract: A light device including a substrate, and first and second light emitters spaced apart from each other, and a power source to control the first light emitter and the second light emitter, in which the first and second light emitters include a light emitting region, a wavelength conversion layer disposed on the light emitting region, and a lateral reflection layer covering a region of a side of the light emitting region and the wavelength conversion layer, the first light emitter and the second light emitter are configured to output the same or different magnitudes of power by receiving the same or different magnitudes of current, the first and second light emitters are respectively configured to emit first light and second light, the first light emitter is electrically connected to the second light emitter through a common electrode.

Abstract: The present invention relates to an apparatus and method for encoding and decoding an image by skip encoding. The image-encoding method by skip encoding, which performs intra-prediction, comprises: performing a filtering operation on the signal which is reconstructed prior to an encoding object signal in an encoding object image; using the filtered reconstructed signal to generate a prediction signal for the encoding object signal; setting the generated prediction signal as a reconstruction signal for the encoding object signal; and not encoding the residual signal which can be generated on the basis of the difference between the encoding object signal and the prediction signal, thereby performing skip encoding on the encoding object signal.

Abstract: Disclosed are a sensing pixel and an image sensor including the same. The sensing pixel includes a determination region, which includes one or more floating body transistors, and an integration region that is adjacent to a floating body region of one of the one or more floating body transistors, absorbs light to generate an electron-hole pair including an electron and a positive hole, and transfers the electron or the positive hole to the floating body region of the one floating body transistor.

Abstract: A depth pixel of a three-dimensional image sensor includes a first photo gate which is turned on/off in response to a first photo control signal, a first photo detection area configured to generate first charges based on a received light reflected from a subject when the first photo gate is turned on, a first transmission gate which is turned on/off in response to a first transmission control signal, a first floating diffusion area configured to accumulate the first charges generated from the first photo detection area when the first transmission gate is turned on, and a first compensation unit configured to generate second charges which are different from the first charges based on ambient light components included in the received light to supply the second charges to the first floating diffusion area.

Abstract: An image sensor according to an example embodiment of includes a first pixel and a second pixel in a first row. The first pixel includes a first photoelectric conversion element at a first depth in a semiconductor substrate and the first photoelectric conversion element is configured to convert a first visible light spectrum into a first photo charge, and the second pixel includes a second photoelectric conversion element at a second depth from the first depth in the semiconductor substrate, the second photoelectric conversion element is at least partially overlapped by the first photoelectric conversion element in a vertical direction, and the second photoelectric conversion element is configured to convert a second visible light spectrum into a second photo charge.

Abstract: A depth pixel of an image sensor includes a depth sensing element configured to generate first charges that are photo-electrically converted from a light reflected from an object, a first floating diffusion node configured to receive the first charges from the depth sensing element, a second floating diffusion node configured to output second charges corresponding to a component of a reflection light where a component of an ambient light is cancelled, and an ambient light cancellation circuit configured to detect the ambient light to control a barrier level of a charge transfer path between the first floating diffusion node and the second floating diffusion node in response to the ambient light.

Abstract: In a method of operating an image sensor, a noise voltage of a floating diffusion region is sampled after a reset voltage is applied to the floating diffusion region. A storage region, in which a photo-charge is stored, is electrically connected to the floating diffusion region after sampling the noise voltage, and a demodulation voltage of the floating diffusion region is sampled after the storage region and the floating diffusion region are electrically-connected. A voltage is determined based on the noise voltage and the demodulation voltage.

Abstract: An image sensor is provided. The image sensor includes a photoelectric converter formed on a first layer and configured to generate light charges by receiving light, a read circuit formed on a second layer below the first layer and configured to accumulate the generated light charges and produce a video signal according to an amount of the accumulated light charges, and a light charge transfer layer formed on a third layer between the first and second layers and configured to transfer the generated light charges to the read circuit. The read circuit includes a single transistor, and the light charges are accumulated in a body of the single transistor.

Abstract: Disclosed are a sensing pixel and an image sensor including the same. The sensing pixel includes a determination region, which includes one or more floating body transistors, and an integration region that is adjacent to a floating body region of one of the one or more floating body transistors, absorbs light to generate an electron-hole pair including an electron and a positive hole, and transfers the electron or the positive hole to the floating body region of the one floating body transistor.

Abstract: An image sensor according to an example embodiment of includes a first pixel and a second pixel in a first row. The first pixel includes a first photoelectric conversion element at a first depth in a semiconductor substrate and the first photoelectric conversion element is configured to convert a first visible light spectrum into a first photo charge, and the second pixel includes a second photoelectric conversion element at a second depth from the first depth in the semiconductor substrate, the second photoelectric conversion element is at least partially overlapped by the first photoelectric conversion element in a vertical direction, and the second photoelectric conversion element is configured to convert a second visible light spectrum into a second photo charge.

Abstract: A depth pixel of an image sensor includes a depth sensing element configured to generate first charges that are photo-electrically converted from a light reflected from an object, a first floating diffusion node configured to receive the first charges from the depth sensing element, a second floating diffusion node configured to output second charges corresponding to a component of a reflection light where a component of an ambient light is cancelled, and an ambient light cancellation circuit configured to detect the ambient light to control a barrier level of a charge transfer path between the first floating diffusion node and the second floating diffusion node in response to the ambient light.

Abstract: A depth pixel of a three-dimensional image sensor includes a first photo gate which is turned on/off in response to a first photo control signal, a first photo detection area configured to generate first charges based on a received light reflected from a subject when the first photo gate is turned on, a first transmission gate which is turned on/off in response to a first transmission control signal, a first floating diffusion area configured to accumulate the first charges generated from the first photo detection area when the first transmission gate is turned on, and a first compensation unit configured to generate second charges which are different from the first charges based on ambient light components included in the received light to supply the second charges to the first floating diffusion area.

Abstract: A depth-sensing pixel included in a three-dimensional (3D) image sensor includes: a photoelectric conversion device configured to generate an electrical charge by converting modulated light reflected by a subject; a capture transistor, controlled by a capture signal applied to the gate thereof, the photoelectric conversion device being connected to the drain thereof; and a transfer transistor, controlled by a transfer signal applied to the gate thereof, the source of the capture transistor being connected to the drain thereof, and a floating diffusion region being connected to the source thereof.

Abstract: In a method of operating an image sensor, a noise voltage of a floating diffusion region is sampled after a reset voltage is applied to the floating diffusion region. A storage region, in which a photo-charge is stored, is electrically connected to the floating diffusion region after sampling the noise voltage, and a demodulation voltage of the floating diffusion region is sampled after the storage region and the floating diffusion region are electrically-connected. A voltage is determined based on the noise voltage and the demodulation voltage.

Abstract: Provided are an image sensor and a method for manufacturing the same. The image sensor comprises a substrate, a bonding silicon, an interlayer dielectric, a first contact plug, a second contact plug, a second metal interconnection, and a color filter layer and a microlens. The substrate comprises a first metal interconnection. The bonding silicon is formed on the substrate, and comprises a plurality of impurity regions. The interlayer dielectric is formed on the bonding silicon. The first contact plug penetrates the bonding silicon and is electrically connected to the first metal interconnection. The second contact plug penetrates the interlayer dielectric and is connected to a surface of the bonding silicon. The second metal interconnection is formed on the interlayer dielectric, and is connected to the second contact plug. The color filter layer and a microlens are formed over the second metal interconnection.

Abstract: An image sensor is disclosed that includes a first substrate including an electric junction region, a transistor, and a metal line connected to the electric junction region or the transistor; and a photodiode formed on the first substrate. The first substrate is formed at an upper portion thereof with a reflective layer to reflect light back to the photodiode.

Abstract: Provided is an image sensor. The image sensor includes a semiconductor substrate, photodiode structures, color filters, and microlenses. The semiconductor substrate includes a first region having pixel regions and a second region around the first region. The pixel regions are arranged in a matrix configuration. Each of the photodiode structures has a photodiode in each of the pixel regions. The color filters are disposed on or over the photodiode structures, the color filters correspond to the pixel regions, respectively, and have different areas corresponding to incident angles of light.

Abstract: Embodiments relate to an image sensor and a method of forming an image sensor. According to embodiments, an image sensor may include a first substrate and a photodiode. A circuitry including a metal interconnection may be formed on and/or over the first substrate. The photodiode may be formed over a first substrate, and may contact the metal interconnection. The circuitry of the first substrate may include a first transistor, a second transistor, an electrical junction region, and a first conduction type region. The first and second transistors may be formed over the first substrate. According to embodiments, an electrical junction region may be formed between the first transistor and the second transistor. The first conduction type region may be formed at one side of the second transistor, and may be connected to the metal interconnection.

Abstract: Disclosed are an image sensor and a method for manufacturing the same. The image sensor includes a substrate provided with a transistor circuit, first and second interconnections separated from each other on the substrate, a first conductive-type conductive layer formed at side surfaces of the first interconnection, a second conductive-type conductive layer formed at side surfaces of the second interconnection, and an intrinsic layer formed between the first and second conductive-type conductive layers thereby forming a P-I-N structure.

Abstract: Provided are an image sensor and a method for manufacturing the same. The image sensor comprises a substrate, a bonding silicon, an interlayer dielectric, a first contact plug, a second contact plug, a second metal interconnection, and a color filter layer and a microlens. The substrate comprises a first metal interconnection. The bonding silicon is formed on the substrate, and comprises a plurality of impurity regions. The interlayer dielectric is formed on the bonding silicon. The first contact plug penetrates the bonding silicon and is electrically connected to the first metal interconnection. The second contact plug penetrates the interlayer dielectric and is connected to a surface of the bonding silicon. The second metal interconnection is formed on the interlayer dielectric, and is connected to the second contact plug. The color filter layer and a microlens are formed over the second metal interconnection.