Patents by Inventor Seoung-Kue Jo

Seoung-Kue Jo has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Semiconductor device having early operation high voltage generator and high voltage supplying method therefor
    Patent number: 6504783
    Abstract: A semiconductor device for performing a static random access memory operation includes a plurality of refresh type memory cells provided at intersections of a plurality of word lines and a plurality of bit lines, a high voltage generator providing a voltage higher than a power source voltage to a stand-by high voltage output node in response to a driving control signal activated in a memory cell access operation period, an internal circuit related to word line driving for selecting a word line among the plurality of word lines using the high voltage in response to command information and address information, and a driving control signal generator generating the driving control signal in response to the command information to operate the high voltage generator prior to initial charge consumption in the stand-by high voltage output node during the memory cell access operation period.
    Type: Grant
    Filed: September 17, 2001
    Date of Patent: January 7, 2003
    Assignee: Samsung Electronics Co., Ltd.
    Inventor: Seoung-Kue Jo
  • Semiconductor device having early operation high voltage generator and high voltage supplying method therefore
    Publication number: 20020060943
    Abstract: A semiconductor device for performing a static random access memory operation includes a plurality of refresh type memory cells provided at intersections of a plurality of word lines and a plurality of bit lines, a high voltage generator providing a voltage higher than a power source voltage to a stand-by high voltage output node in response to a driving control signal activated in a memory cell access operation period, an internal circuit related to word line driving for selecting a word line among the plurality of word lines using the high voltage in response to command information and address information, and a driving control signal generator generating the driving control signal in response to the command information to operate the high voltage generator prior to initial charge consumption in the stand-by high voltage output node during the memory cell access operation period.
    Type: Application
    Filed: September 17, 2001
    Publication date: May 23, 2002
    Inventor: Seoung-Kue Jo