Abstract: The present invention provides a crucible for melting and casting a metal fuel, which includes a reaction preventing layer including: LaYO3; or ZrO2 containing a Y2O3 stabilizer at 5 to 10 wt %, and a method of melting and casting a metal fuel using the same.

Abstract: The present invention provides a crucible for melting and casting a metal fuel, which includes a reaction preventing layer including: LaYO3; or ZrO2 containing a Y2O3 stabilizer at 5 to 10 wt %, and a method of melting and casting a metal fuel using the same.

Abstract: A method for fabricating a vertical channel type nonvolatile memory device includes forming alternately a plurality of interlayer dielectric layers and a plurality of conductive layers over a substrate, forming a trench having a plurality of recesses on a surface of the trench by etching the plurality of interlayer dielectric layers and a plurality of conductive layers, wherein the plurality of recesses are formed at a certain interval on the surface of the trench, forming a charge blocking layer over a plurality of surfaces of the plurality of recesses, forming a charge storage layer over the charge blocking layer for filling a plurality of the remaining recesses with a charge storage material, forming a tunnel dielectric layer to cover the charge storage layer, and forming a vertical channel layer by filling the remaining trench.

Abstract: A method for fabricating a vertical channel type nonvolatile memory device includes forming alternately a plurality of interlayer dielectric layers and a plurality of conductive layers over a substrate, forming a trench having a plurality of recesses on a surface of the trench by etching the plurality of interlayer dielectric layers and a plurality of conductive layers, wherein the plurality of recesses are formed at a certain interval on the surface of the trench, forming a charge blocking layer over a plurality of surfaces of the plurality of recesses, forming a charge storage layer over the charge blocking layer for filling a plurality of the remaining recesses with a charge storage material, forming a tunnel dielectric layer to cover the charge storage layer, and forming a vertical channel layer by filling the remaining trench.