Patents by Inventor Seoyeon IM

Seoyeon IM has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • THIN FILM TRANSISTOR SUBSTRATE HAVING BI-LAYER OXIDE SEMICONDUCTOR
    Publication number: 20180122833
    Abstract: The present disclosure relates to a thin film transistor substrate having a bi-layer oxide semiconductor. The present disclosure provides a thin film transistor substrate comprising: a substrate; and an oxide semiconductor layer on the substrate, wherein the oxide semiconductor layer includes: a first oxide semiconductor layer having indium, gallium and zinc; and a second oxide semiconductor layer stacked on the first oxide semiconductor layer having the indium, gallium and zinc, wherein any one layer of the first and the second oxide semiconductor layers has a first composition ratio of the indium, gallium and zinc of 1:1:1; and wherein other layer has a second composition ratio of the indium, gallium and zinc in which the indium ratio is higher than the zinc ratio.
    Type: Application
    Filed: October 31, 2017
    Publication date: May 3, 2018
    Applicant: LG Display Co. , Ltd.
    Inventors: Sohyung LEE, Sungki KIM, Youngjin YI, Mincheol KIM, Jeongsuk YANG, Seoyeon IM