Abstract: An exhaust gas processing system including a process chamber in which an exhaust gas is produced; an exhaust gas measurer receiving the exhaust gas and measuring a concentration of the exhaust gas; a solid producing gas processor receiving the exhaust gas and removing a solid producing gas contained in the exhaust gas; a gas supply supplying dilution and cooling gases to the solid producing gas processor; a processed gas measurer receiving, as a processed gas, the exhaust gas free of the solid producing gas and measuring a temperature of the processed gas and ingredients of the processed gas; and a controller receiving results of measurement of the concentration of the exhaust gas from the exhaust gas measurer and results of measurement of the temperature of the processed gas and the ingredients of the processed gas from the exhaust gas measurer and controlling the gas supply based on the measurement results.

Abstract: An apparatus for collecting a by-product, includes: a chamber provided with a gas inlet and a gas outlet and having an internal space; a heater disposed on the gas inlet side of the internal space within the chamber and varying a heating temperature in time series; a vortex forming member disposed around the heater; a plurality of first collecting members disposed below the heater; a second collecting member disposed below the first collecting member so that a plurality of second collecting members intersect each other; and a third collecting member disposed on the gas outlet side of the internal space within the chamber.

Abstract: An apparatus and method for treating a semiconductor process gas comprises a gas inlet allowing a treatment target gas (or gas to be treated) to flow therethrough; a catalytic reaction portion including a catalyst and configured to allow the treatment target gas to be brought into contact with the catalyst; a space velocity controller between the gas inlet and the catalytic reaction portion, the space velocity controller extending from the gas inlet in a diagonal direction in relation to the gas inlet; a differential pressure buffer portion between the space velocity controller and the catalytic reaction portion and including a filter; and a gas outlet configured to externally discharge a product formed as the treatment target gas comes into contact with the catalyst.

Abstract: A vacuum chuck includes a pedestal including a first surface on which a substrate may be mounted. The first surface of the substrate may include a vacuum hole to provide a vacuum pressure below the substrate, a vacuum groove connected to the vacuum hole, and a gas hole surrounding the vacuum groove to transmit a bottom gas to the substrate. A vacuum pipe may be provided to connect to the vacuum hole, and a gas pipe may be provided to connect to the gas hole. The diameter of the vacuum hole may be about 2 to about 3 micrometers, and a width of the vacuum groove may be about 1.6 to about 2.5 micrometers.

Abstract: An exhaust gas processing system including a process chamber in which an exhaust gas is produced; an exhaust gas measurer receiving the exhaust gas and measuring a concentration of the exhaust gas; a solid producing gas processor receiving the exhaust gas and removing a solid producing gas contained in the exhaust gas; a gas supply supplying dilution and cooling gases to the solid producing gas processor; a processed gas measurer receiving, as a processed gas, the exhaust gas free of the solid producing gas and measuring a temperature of the processed gas and ingredients of the processed gas; and a controller receiving results of measurement of the concentration of the exhaust gas from the exhaust gas measurer and results of measurement of the temperature of the processed gas and the ingredients of the processed gas from the exhaust gas measurer and controlling the gas supply based on the measurement results.

Abstract: An apparatus and method for treating a semiconductor process gas comprises a gas inlet allowing a treatment target gas (or gas to be treated) to flow therethrough; a catalytic reaction portion including a catalyst and configured to allow the treatment target gas to be brought into contact with the catalyst; a space velocity controller between the gas inlet and the catalytic reaction portion, the space velocity controller extending from the gas inlet in a diagonal direction in relation to the gas inlet; a differential pressure buffer portion between the space velocity controller and the catalytic reaction portion and including a filter; and a gas outlet configured to externally discharge a product formed as the treatment target gas comes into contact with the catalyst.

Abstract: A reaction gas supply system includes a reaction chamber configured to process a substrate using a reaction gas, a mass flow controller (MFC) configured to control an amount of the reaction gas supplied to the reaction chamber, a tank between the reaction chamber and the MFC, the tank having a cylindrical inner space configured to store the reaction gas, and an outlet portion configured to discharge the reaction gas from the tank, and a valve between the tank and the reaction chamber, the outlet portion of the tank having a gradually decreasing diameter toward the valve.

Abstract: An apparatus for collecting a by-product, includes: a chamber provided with a gas inlet and a gas outlet and having an internal space; a heater disposed on the gas inlet side of the internal space within the chamber and varying a heating temperature in time series; a vortex forming member disposed around the heater; a plurality of first collecting members disposed below the heater; a second collecting member disposed below the first collecting member so that a plurality of second collecting members intersect each other; and a third collecting member disposed on the gas outlet side of the internal space within the chamber.

Abstract: A gas supply for a layer deposition apparatus including a plurality of charge distribution lines connected to a first gas supply source and a plurality of gas filling tanks respectively connected to the charge distribution lines is disclosed. Each of the gas filling tanks may be pressurized with a first gas from the first gas supply source, and a gas supply line connected to a second gas supply source. The apparatus may include a multi-dosing valve assembly connected to outlet portions of the gas filling tanks and configured to supply, sequentially, the first gas from the gas filling tanks to a process chamber. The multi-dosing valve assembly may include a flow path block having a main supply line connected to the process chamber and a backflow prevention valve block fastened to the flow path block and having an opening/closing valve therein.

Abstract: A vacuum chuck includes a pedestal including a first surface on which a substrate may be mounted. The first surface of the substrate may include a vacuum hole to provide a vacuum pressure below the substrate, a vacuum groove connected to the vacuum hole, and a gas hole surrounding the vacuum groove to transmit a bottom gas to the substrate. A vacuum pipe may be provided to connect to the vacuum hole, and a gas pipe may be provided to connect to the gas hole. The diameter of the vacuum hole may be about 2 to about 3 micrometers, and a width of the vacuum groove may be about 1.6 to about 2.5 micrometers.

Abstract: A gas supply for a layer deposition apparatus including a plurality of charge distribution lines connected to a first gas supply source and a plurality of gas filling tanks respectively connected to the charge distribution lines is disclosed. Each of the gas filling tanks may be pressurized with a first gas from the first gas supply source, and a gas supply line connected to a second gas supply source. The apparatus may include a multi-dosing valve assembly connected to outlet portions of the gas filling tanks and configured to supply, sequentially, the first gas from the gas filling tanks to a process chamber. The multi-dosing valve assembly may include a flow path block having a main supply line connected to the process chamber and a backflow prevention valve block fastened to the flow path block and having an opening/closing valve therein.

Abstract: A lighting apparatus can dissipate heat by conduction and convection. A heat sink is provided with an active cooling device for the lighting apparatus.

Abstract: Disclosed is a heat-dissipating apparatus and an illuminator using the same. The heat-dissipating apparatus includes a heat sink including one side contacted with a heat generating portion and the other side having heat-dissipating pins arranged at the edge thereof and a space formed inside the heat-dissipating pins; and a driver that is positioned in the space and keeps the heat-dissipating pins cool by sucking outside air and discharging inside air with a pumping operation.

Abstract: A lighting apparatus can dissipate heat by conduction and convection. A heat sink is provided with an active cooling device for the lighting apparatus.

Abstract: Disclosed is a heat-dissipating apparatus and an illuminator using the same. The heat-dissipating apparatus includes a heat sink including one side contacted with a heat generating portion and the other side having heat-dissipating pins arranged at the edge thereof and a space formed inside the heat-dissipating pins; and a driver that is positioned in the space and keeps the heat-dissipating pins cool by sucking outside air and discharging inside air with a pumping operation.