Patents by Inventor Sephorah Bisson

Sephorah Bisson has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Semiconductor structure and method of making same
    Patent number: 7391094
    Abstract: A semiconductor structure includes a substrate having a surface and being made of a material that provides atypical surface properties to the surface, a bonding layer on the surface of the substrate, and a further layer molecularly bonded to the bonding layer. A method for fabricating such a semiconductor structure includes providing a substrate having a surface and being made of a material that provides atypical surface properties to the surface, providing a bonding layer on the surface of the substrate, smoothing the bonding layer to provide a surface that is capable of molecular bonding, and molecularly bonding a further layer to the bonding layer to form the structure. The atypical surface properties preferably include at least one of a roughness of more than 0.5 nm rms, or a roughness of at least 0.4 nm rms that is difficult to polish, or a chemical composition that is incompatible with molecular bonding.
    Type: Grant
    Filed: December 13, 2005
    Date of Patent: June 24, 2008
    Assignee: S.O.I.Tec Silicon on Insulator Technologies
    Inventors: Olivier Rayssac, Muriel Martinez, Sephorah Bisson, Lionel Portigliatti
  • Semiconductor structure and method of making same
    Publication number: 20060086949
    Abstract: A semiconductor structure includes a substrate having a surface and being made of a material that provides atypical surface properties to the surface, a bonding layer on the surface of the substrate, and a further layer molecularly bonded to the bonding layer. A method for fabricating such a semiconductor structure includes providing a substrate having a surface and being made of a material that provides atypical surface properties to the surface, providing a bonding layer on the surface of the substrate, smoothing the bonding layer to provide a surface that is capable of molecular bonding, and molecularly bonding a further layer to the bonding layer to form the structure. The atypical surface properties preferably include at least one of a roughness of more than 0.5 nm rms, or a roughness of at least 0.4 nm rms that is difficult to polish, or a chemical composition that is incompatible with molecular bonding.
    Type: Application
    Filed: December 13, 2005
    Publication date: April 27, 2006
    Applicant: S.O.I.Tec Silicon on Insulator Technologies S.A., a French company
    Inventors: Olivier Rayssac, Muriel Martinez, Sephorah Bisson, Lionel Portigliatti
  • Semiconductor structure and method of making same
    Patent number: 6989314
    Abstract: A semiconductor structure includes a substrate having a surface and being made of a material that provides a typical surface properties to the surface, a bonding layer on the surface of the substrate, and a further layer molecularly bonded to the bonding layer. A method for fabricating such a semiconductor structure includes providing a substrate having a surface and being made of a material that provides a typical surface properties to the surface, providing a bonding layer on the surface of the substrate, smoothing the bonding layer to provide a surface that is capable of molecular bonding, and molecularly bonding a further layer to the bonding layer to form the structure. The a typical surface properties preferably include at least one of a roughness of more than 0.5 nm rms, or a roughness of at least 0.4 nm rms that is difficult to polish, or a chemical composition that is incompatible with molecular bonding.
    Type: Grant
    Filed: February 11, 2004
    Date of Patent: January 24, 2006
    Assignee: S.O.I.Tec Silicon on Insulator Technologies S.A.
    Inventors: Olivier Rayssac, Muriel Martinez, Sephorah Bisson, Lionel Portigliatti
  • Semiconductor structure and method of making same
    Publication number: 20040178448
    Abstract: A semiconductor structure includes a substrate having a surface and being made of a material that provides a typical surface properties to the surface, a bonding layer on the surface of the substrate, and a further layer molecularly bonded to the bonding layer. A method for fabricating such a semiconductor structure includes providing a substrate having a surface and being made of a material that provides a typical surface properties to the surface, providing a bonding layer on the surface of the substrate, smoothing the bonding layer to provide a surface that is capable of molecular bonding, and molecularly bonding a further layer to the bonding layer to form the structure. The a typical surface properties preferably include at least one of a roughness of more than 0.5 nm rms, or a roughness of at least 0.4 nm rms that is difficult to polish, or a chemical composition that is incompatible with molecular bonding.
    Type: Application
    Filed: February 11, 2004
    Publication date: September 16, 2004
    Inventors: Olivier Rayssac, Muriel Maritnez, Sephorah Bisson, Lionel Portigliatti