Abstract: Present implementations are directed to nonvolatile memory devices with charge trap transistor structures. Example implementations can include a method of memory storage, by programming a first data node operatively coupled to a first charge trap transistor to a first level above a threshold, decreasing, below the threshold, a first voltage at the first charge trap transistor, increasing, above the threshold, the first voltage at the first charge trap transistor, and reprogramming, the first data node to the first level, in response to an interruption of the first voltage at the first charge trap transistor caused by the decreasing and the increasing.

Abstract: A method for changing functionality of an integrated circuit or improving performance of an integrated circuit, may include changing a threshold voltage of at least one charge trap transistor (CTT) in a nonvolatile multi-time programmable fashion. The at least one CTT may be fabricated using a high-k dielectric material as a gate dielectric. In some embodiments, the threshold voltage of the at least one CTT may be changed by increasing or decreasing the threshold voltage.