Patents by Inventor Seppo Nenonen

Seppo Nenonen has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Publication number: 20230408713
    Abstract: Disclosed is a header for a radiation detector assembly provided for mounting a detector head into an enclosure formed by the header and a detector can to form the radiation detector assembly. The detector head includes a semiconductor radiation detector arranged on a first side of a substrate and a thermoelectric cooler, TEC, arranged on a second side of the substrate, the header including: a base plate having a first side for mounting the TEC and a second side with an attachment mechanism for attaching the radiation detector assembly to a radiation-detecting appliance; contact pins that provide electrical coupling through the base plate protruding from the first side of the base plate to substantially define a rim for accommodating the TEC within the rim; and a draining outlet with an opening through the base plate between its first and second sides transferring a gas to and/or from the enclosure.
    Type: Application
    Filed: May 22, 2023
    Publication date: December 21, 2023
    Inventors: Seppo NENONEN, Hans ANDERSSON
  • Patent number: 9123837
    Abstract: A semiconductor radiation detector includes a bulk layer of semiconductor material. On a first side of said bulk layer is an arrangement of field electrodes and a collection electrode for collecting radiation-induced signal charges from said bulk layer. A radiation shield exists on a second side of said bulk layer, opposite to said first side, which radiation shield selectively overlaps the location of said collection electrode.
    Type: Grant
    Filed: May 31, 2013
    Date of Patent: September 1, 2015
    Assignee: Oxford Instruments Analytical Oy
    Inventors: Hans Andersson, Pasi Kostamo, Veikko Kämäräinen, Seppo Nenonen
  • Publication number: 20140353786
    Abstract: A semiconductor radiation detector includes a bulk layer of semiconductor material. On a first side of said bulk layer is an arrangement of field electrodes and a collection electrode for collecting radiation-induced signal charges from said bulk layer. A radiation shield exists on a second side of said bulk layer, opposite to said first side, which radiation shield selectively overlaps the location of said collection electrode.
    Type: Application
    Filed: May 31, 2013
    Publication date: December 4, 2014
    Inventors: Hans ANDERSSON, Pasi KOSTAMO, Veikko KÄMÄRÄINEN, Seppo NENONEN
  • Patent number: 7727796
    Abstract: A semiconductor radiation detector crystal is patterned by using a Q-switched laser to selectively remove material from a surface of said semiconductor radiation detector crystal, thus producing a groove in said surface that penetrates deeper than the thickness of a diffused layer on said surface.
    Type: Grant
    Filed: April 26, 2007
    Date of Patent: June 1, 2010
    Assignee: Oxford Instruments Analytical Oy
    Inventors: Heikki Johannes Sipilä, Hans Andersson, Seppo Nenonen, Juha Jouni Kalliopuska
  • Patent number: 7660393
    Abstract: A gas tight radiation window membrane comprises a layered diffusion barrier with a reactive metal layer (201) covered on both sides by cover layers (202, 203). An originally continuous carrier layer (101) can be made a mesh that has openings coincident with openings of a reinforcement grid (105), while the gas tight diffusion barrier (107, 507) spans as a continuous film over said openings in said mesh.
    Type: Grant
    Filed: June 19, 2007
    Date of Patent: February 9, 2010
    Assignee: Oxford Instruments Analytical Oy
    Inventors: Heikki Johannes Sipilä, Seppo Nenonen
  • Publication number: 20080317209
    Abstract: A gas tight radiation window membrane comprises a layered diffusion barrier with a reactive metal layer (201) covered on both sides by cover layers (202, 203). An originally continuous carrier layer (101) can be made a mesh that has openings coincident with openings of a reinforcement grid (105), while the gas tight diffusion barrier (107, 507) spans as a continuous film over said openings in said mesh.
    Type: Application
    Filed: June 19, 2007
    Publication date: December 25, 2008
    Inventors: Heikki Johannes Sipila, Seppo Nenonen
  • Publication number: 20080265358
    Abstract: A semiconductor radiation detector crystal is patterned by using a Q-switched laser to selectively remove material from a surface of said semiconductor radiation detector crystal, thus producing a groove in said surface that penetrates deeper than the thickness of a diffused layer on said surface.
    Type: Application
    Filed: April 26, 2007
    Publication date: October 30, 2008
    Inventors: Heikki Johannes Sipila, Hans Andersson, Seppo Nenonen
  • Publication number: 20070230664
    Abstract: A collimator for collimating X-rays in an X-ray spectrometric measuring apparatus comprises a body of a microchannel plate (203, 205, 701, 702, 703, 704, 705, 711, 712, 713, 714, 715, 801, 901, 1003). Most advantageously the channel walls of the microchannel plate are plated with a thin coating (310) of a heavy metal.
    Type: Application
    Filed: April 4, 2006
    Publication date: October 4, 2007
    Inventors: Heikki Sipila, Seppo Nenonen