Patents by Inventor Se-Ra An

Se-Ra An has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Patent number: 10686405
    Abstract: A resonator oscillator that may be included in a gas sensing system may include an oscillator that may be electrically connected to an external resonator through a conductive line. The oscillator may generate an oscillating signal having a frequency corresponding to a resonance frequency of the external resonator in an oscillating path. A spurious resonance removal circuit on the oscillating path may remove spurious resonance caused by the conductive line from the oscillating path. A gas sensing system may include the oscillator, a resonator that includes a sensor configured to sense a gas, and a frequency counting logic that receives the oscillating signal and a reference clock signal, performs a counting operation on the oscillating signal according to a logic state of the reference clock signal to generate a counted value, and generate a gas sensing output indicating a sensed gas based on the counted value.
    Type: Grant
    Filed: October 16, 2017
    Date of Patent: June 16, 2020
    Assignee: Samsung Electronics Co., Ltd.
    Inventors: Eun-seok Shin, Se-ra An, Jae-jin Park, Seung-hoon Lee, Do-hyung Kim, Min-young Kang
  • Patent number: 10468330
    Abstract: A semiconductor chip includes a semiconductor circuit layer and a semiconductor thermoelectric layer disposed on a substrate. The circuit layer includes a first circuit and a second circuit disposed horizontally in a first direction. The thermoelectric layer includes a first on-die thermoelectric element, where the thermoelectric layer is disposed on the circuit layer including the first circuit and the second circuit. The first on-die thermoelectric element is configured to distribute heat generated at the first circuit horizontally in the first direction toward the second circuit.
    Type: Grant
    Filed: December 10, 2014
    Date of Patent: November 5, 2019
    Assignee: SAMSUNG ELECTRONICS CO., LTD.
    Inventors: Jun-Hyeok Yang, Se-Ki Kim, Se-Ra An, Hyung-Jong Ko
  • Publication number: 20180138859
    Abstract: A resonator oscillator that may be included in a gas sensing system may include an oscillator that may be electrically connected to an external resonator through a conductive line. The oscillator may generate an oscillating signal having a frequency corresponding to a resonance frequency of the external resonator in an oscillating path. A spurious resonance removal circuit on the oscillating path may remove spurious resonance caused by the conductive line from the oscillating path. A gas sensing system may include the oscillator, a resonator that includes a sensor configured to sense a gas, and a frequency counting logic that receives the oscillating signal and a reference clock signal, performs a counting operation on the oscillating signal according to a logic state of the reference clock signal to generate a counted value, and generate a gas sensing output indicating a sensed gas based on the counted value.
    Type: Application
    Filed: October 16, 2017
    Publication date: May 17, 2018
    Applicant: Samsung Electronics Co., Ltd.
    Inventors: Eun-seok SHIN, Se-ra AN, Jae-jin PARK, Seung-hoon LEE, Do-hyung KIM, Min-young KANG
  • Patent number: 9917240
    Abstract: A thermoelectric element is provided as follows. First and second semiconductor fin structures are disposed on a semiconductor substrate. Each semiconductor fin structure extends in a first direction, protruding from the semiconductor substrate. First and second semiconductor nanowires are disposed on the first and second semiconductor fin structures, respectively. The first semiconductor nanowires include first impurities. The second semiconductor nanowires include second impurities different from the first impurities. A first electrode is connected to first ends of the first and second semiconductor nanowires. A second electrode is connected to second ends of the first semiconductor nanowires. A third electrode is connected to second ends of the second semiconductor nanowires.
    Type: Grant
    Filed: June 16, 2015
    Date of Patent: March 13, 2018
    Assignee: SAMSUNG ELECTRONICS CO., LTD.
    Inventors: Kwang-Ho Kim, Jun-Hyeok Yang, Hyung-Jong Ko, Se-Ki Kim, Ho-Jin Park, Se-Ra An
  • Publication number: 20160027986
    Abstract: A thermoelectric element is provided as follows. First and second semiconductor fin structures are disposed on a semiconductor substrate. Each semiconductor fin structure extends in a first direction, protruding from the semiconductor substrate. First and second semiconductor nanowires are disposed on the first and second semiconductor fin structures, respectively. The first semiconductor nanowires include first impurities. The second semiconductor nanowires include second impurities different from the first impurities. A first electrode is connected to first ends of the first and second semiconductor nanowires. A second electrode is connected to second ends of the first semiconductor nanowires. A third electrode is connected to second ends of the second semiconductor nanowires.
    Type: Application
    Filed: June 16, 2015
    Publication date: January 28, 2016
    Inventors: KWANG-HO KIM, Jun-Hyeok YANG, Hyung-Jong KO, Se-Ki KIM, Ho-Jin PARK, Se-Ra AN
  • Publication number: 20150170992
    Abstract: A semiconductor chip includes a semiconductor circuit layer and a semiconductor thermoelectric layer disposed on a substrate. The circuit layer includes a first circuit and a second circuit disposed horizontally in a first direction. The thermoelectric layer includes a first on-die thermoelectric element, where the thermoelectric layer is disposed on the circuit layer including the first circuit and the second circuit. The first on-die thermoelectric element is configured to distribute heat generated at the first circuit horizontally in the first direction toward the second circuit.
    Type: Application
    Filed: December 10, 2014
    Publication date: June 18, 2015
    Inventors: Jun-Hyeok Yang, Se-Ki Kim, Se-Ra An, Hyung-Jong Ko