Patents by Inventor Se-Ran Oh

Se-Ran Oh has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Method of manufacturing metal hardmask and semiconductor device
    Patent number: 10790147
    Abstract: A method of manufacturing a semiconductor device includes forming an etch target layer on a substrate; forming an amorphous metal layer on the etch target layer, the amorphous metal layer comprising nitrogen between 15 atomic percentage (at %) and 25 at %; forming an amorphous metal hardmask by patterning the amorphous metal layer; and etching the etch target layer by using the amorphous metal hardmask as an etching mask.
    Type: Grant
    Filed: April 24, 2018
    Date of Patent: September 29, 2020
    Assignee: Samsung Electronics Co., Ltd.
    Inventors: Jang-Hee Lee, Se-Ran Oh, Hyun-Su Kim, Ik-Soo Kim, Seong-Gil Park, Geun-O Jeong
  • METHOD OF MANUFACTURING METAL HARDMASK AND SEMICONDUCTOR DEVICE
    Publication number: 20190080908
    Abstract: A method of manufacturing a semiconductor device includes forming an etch target layer on a substrate; forming an amorphous metal layer on the etch target layer, the amorphous metal layer comprising nitrogen between 15 atomic percentage (at %) and 25 at %; forming an amorphous metal hardmask by patterning the amorphous metal layer; and etching the etch target layer by using the amorphous metal hardmask as an etching mask.
    Type: Application
    Filed: April 24, 2018
    Publication date: March 14, 2019
    Inventors: JANG-HEE LEE, SE-RAN OH, HYUN-SU KIM, IK-SOO KIM, SEONG-GIL PARK, GEUN-O JEONG
  • METHOD OF FORMING HIGH-QUALITY GRAPHENE USING CONTINUOUS HEAT TREATMENT CHEMICAL VAPOR DEPOSITION
    Publication number: 20140079623
    Abstract: Provided is a method of forming graphene having an increased grain size. In the method, a substrate including a catalyst layer formed of a transition metal is loaded into a chamber and a gaseous carbon source is supplied into the chamber. A continuous heat treatment in which the catalyst layer is locally heated while moving a heated area of the catalyst layer is performed to dissolve a carbon component in the catalyst layer and extract graphene on a surface of the catalyst layer from the dissolved carbon component.
    Type: Application
    Filed: March 15, 2012
    Publication date: March 20, 2014
    Applicant: KOREA ADVANCED INSTITUTE OF SCIENCE AND TECHNOLOGY
    Inventors: Seok-Woo Jeon, Jin-Sup Lee, Se-Ran Oh