Abstract: The present invention relates to production method and device applications of a new silicon (Si) semiconductor light source that emits at a single wavelength at 1320 nm with a full width at half maximum (FWHM) of less than 200 nm and a photoluminescence quantum efficiency of greater than 50% at room temperature. The semiconductor that is the base for the new light source includes a surface which is treated by an acid vapor involving heavy water or Deuterium Oxide (D2O) and a surface layer producing the light source at 1320 nm.

Abstract: The present invention relates to production method and device applications of a new silicon (Si) semiconductor light source that emits at a single wavelength at 1320 nm with a full width at half maximum (FWHM) of less than 200 nm and a photoluminescence quantum efficiency of greater than 50% at room temperature. The semiconductor that is the base for the new light source includes a surface which is treated by an acid vapor involving heavy water or Deuterium Oxide (D2O) and a surface layer producing the light source at 1320 nm.

Abstract: This invention provides a method for producing application quality low-dielectric constant (low-k) cryptocrystal layers on state-of-the-art semiconductor wafers and for producing organized Nanostructures from cryptocrystals and relates to optical and electronic devices that can be obtained from these materials. The results disclosed here indicate that modification of structure and chemical composition of single crystal matrix using chemical vapor processing (CVP) results in high quality cryptocrystal layers that are homogeneous and form a smooth interface with semiconductor wafer With this method, growth rates as high as 1 ?m/hour can be realized for the dielectric cryptocrystal layer formation. The present invention also provides a method for producing Micro- and Nano-wires by transforming cryptocrystals to organized systems. With this method, Nano wires having dimensions ranging from few nanometers up to 1000 nanometer and lengths up to 50 micrometer can be produced.