Patents by Inventor Serge Duarte Pinto

Serge Duarte Pinto has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Patent number: 8597490
    Abstract: Methods for manufacturing a gas electron multiplier. One method comprises a step of preparing a blank sheet comprised of an insulating sheet with first and second metal layers on its surface, a first metal layer hole forming step in which the first metal layer is patterned by means of photolithography, such as to form holes through the first metal layer, an insulating sheet hole forming step, in which the holes formed in the first metal layer are extended through the insulating layer by etching from the first surface side only, and a second metal layer hole forming step, in which the holes are extended through the second metal layer. Alternatively, the second metal layer hole forming step is performed by electrochemical etching, such that the first metal layer remains unaffected during etching of the second metal layer.
    Type: Grant
    Filed: April 14, 2008
    Date of Patent: December 3, 2013
    Assignee: CERN—European Organization for Nuclear Research
    Inventors: Rui De Oliveira, Serge Duarte Pinto
  • Publication number: 20110089042
    Abstract: Methods for manufacturing a gas electron multiplier. One method comprises a step of preparing a blank sheet comprised of an insulating sheet with first and second metal layers on its surface, a first metal layer hole forming step in which the first metal layer is patterned by means of photolithography, such as to form holes through the first metal layer, an insulating sheet hole forming step, in which the holes formed in the first metal layer are extended through the insulating layer by etching from the first surface side only, and a second metal layer hole forming step, in which the holes are extended through the second metal layer. Alternatively, the second metal layer hole forming step is performed by electrochemical etching, such that the first metal layer remains unaffected during etching of the second metal layer.
    Type: Application
    Filed: April 14, 2008
    Publication date: April 21, 2011
    Applicant: CERN - EUROPEAN ORGANIZATION FOR NUCLEAR RESEARCH
    Inventors: Rui De Oliveira, Serge Duarte Pinto