Abstract: The present invention is directed to photodiode arrays comprising a dielectric structure containing an array of face conductive areas (pads) and. Each photodiode is fully separated from each other. Every photodiode has a face electrode formed on sensitive side of the semiconductor substrate and an individual back electrode formed on the opposite side. The number of conductive areas on the dielectric structure is equal to number of photodiodes in the array. The photodiodes of the array are installed on the conductive areas so that their back electrodes have electrical contact with the corresponding conductive area. Each conductive area contains at least one individual conductive hole penetrating the dielectric package from the face side to the opposite side of the dielectric structure. The conductive holes going to backside of the dielectric structure are connected with the back conductive areas formed on back side of dielectric package.

Abstract: The invention disclosed herein relates to a scintillation detector for registering the position of gamma photon interactions, an comprises an array of two or more elongated first and second scintillation crystal elements connected together along their respective long sides, and an array of discrete photosensitive areas disposed on a common substrate of a solid-state semiconductor photo-detector. The array of first and second scintillation crystal elements have proximal output windows optically coupled to the array of discrete photosensitive areas in a one-to-one relationship. The invention may be characterized in that the first and second scintillation crystal elements include a rooftop portion at their distal ends, wherein the rooftop portion optically couples one of the first and second scintillation crystal elements to the other and is configured to reflect and transmit light resulting from a gamma photon interaction from one of the first and second scintillation crystal elements to the other.

Abstract: The invention disclosed herein relates to a scintillation detector for registering the position of gamma photon interactions, an comprises an array of two or more elongated first and second scintillation crystal elements connected together along their respective long sides, and an array of discrete photosensitive areas disposed on a common substrate of a solid-state semiconductor photo-detector. The array of first and second scintillation crystal elements have proximal output windows optically coupled to the array of discrete photosensitive areas in a one-to-one relationship. The invention may be characterized in that the first and second scintillation crystal elements include a rooftop portion at their distal ends, wherein the rooftop portion optically couples one of the first and second scintillation crystal elements to the other and is configured to reflect and transmit light resulting from a gamma photon interaction from one of the first and second scintillation crystal elements to the other.

Abstract: The present invention is directed to photodiode arrays comprising a dielectric structure containing an array of face conductive areas (pads) and. Each photodiode is fully separated from each other. Every photodiode has a face electrode formed on sensitive side of the semiconductor substrate and an individual back electrode formed on the opposite side. The number of conductive areas on the dielectric structure is equal to number of photodiodes in the array. The photodiodes of the array are installed on the conductive areas so that their back electrodes have electrical contact with the corresponding conductive area. Each conductive area contains at least one individual conductive hole penetrating the dielectric package from the face side to the opposite side of the dielectric structure. The conductive holes going to backside of the dielectric structure are connected with the back conductive areas formed on back side of dielectric package.

Abstract: The invention disclosed herein relates to a scintillation detector for registering the position of gamma photon interactions, an comprises an array of two or more elongated first and second scintillation crystal elements connected together along their respective long sides, and an array of discrete photosensitive areas disposed on a common substrate of a solid-state semiconductor photo-detector. The array of first and second scintillation crystal elements have proximal output windows optically coupled to the array of discrete photosensitive areas in a one-to-one relationship. The invention may be characterized in that the first and second scintillation crystal elements include a rooftop portion at their distal ends, wherein the rooftop portion optically couples one of the first and second scintillation crystal elements to the other and is configured to reflect and transmit light resulting from a gamma photon interaction from one of the first and second scintillation crystal elements to the other.

Abstract: Output beam from laser diode bar (1) has divergence around 40 degrees along the fast axis and around 12 degrees along the slow one. The quality of such a beam along the fast axis is good and fast axis collimating lens (FAC) (2) can compensate its high divergence down to 0.5-1 degrees. In the direction of the slow axis the beam from the laser diode bar is focused by cylindrical lens (3) onto the pumping face of laser active medium (5). The pumping face is wider than the pumping spot on it to ensure efficient collection of pumping light. Laser active medium has two parallel faces which form a waveguide for the pumping light. As a result, the pumping light is confined within the waveguide along the slow-axis direction and collimated (near parallel) in the fast-axis direction. Therefore, length of the pump volume (6) can be as long as the laser element itself.