Patents by Inventor Sergei Fedorovich Kausov

Sergei Fedorovich Kausov has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Patent number: 3945029
    Abstract: The semiconductor junction of a diode is made up of p- and n-type layers, said layers having substantially different resistivities. The thickness of the layer with a greater resistivity does not exceed that of the space charge when a reverse bias voltage, which is less than the puncture voltage of the semiconductor junction, is applied to the structure. The minimum distance between the edge of the ohmic contact adjoining the layer with a greater resistivity and the place of emergence of the semiconductor junction to the surface of the structure is no less than the double thickness of the layer with a greater resistivity.
    Type: Grant
    Filed: March 19, 1974
    Date of Patent: March 16, 1976
    Inventor: Sergei Fedorovich Kausov