Abstract: Embodiments of a solid state photomultiplier are provided herein. In some embodiments, a solid state photomultiplier may include a microcell configured to generate an analog signal when exposed to optical photons, a quench resistor electrically coupled to the microcell in series; and a first switch disposed between the quench resistor and an output of the solid state photomultiplier, the first switch electrically coupled to the microcell via the quench resistor and configured to selectively couple the microcell to the output.

Abstract: Embodiments of a solid state photomultiplier are provided herein. In some embodiments, a photosensor may include a sensing element; and readout electronics, wherein the sensing element is AC coupled to the readout electronics. In some embodiments, a solid state photomultipler may include a microcell having; a sensing element; and readout electronics, wherein the sensing element is AC coupled to the readout electronics.

Abstract: A photon detector having an optical transparent plate and photodiode array interconnected by an optical light guide array. The optical light guide array including elements providing a transmission line between the optical transparent plate and the photodiode array, where the position of one or more optical light guide elements is formed to adjust for a miss-registered photodiode individual element.

Abstract: In accordance with the present approach, a dark current is measured for one or more detector elements and used to determine a gain or gain compensation for the respective detector elements. In certain embodiments, the dark current is used to determine a temperature for the respective detector element and the temperature is used to determine the gain or gain compensation. In other embodiments, the dark current is used to calculate the gain or gain compensation for the respective detector element without calculating an intermediate temperature value, such as via the use of a transfer function.

Abstract: A silicon photomultiplier array of microcells including a photon avalanche diode and an electronic circuit configured to provide a first one-shot pulse and a second one-shot pulse based on a detected current flowing through the photon avalanche diode. The microcells arranged in rows and columns with each microcell of a respective row connected to a respective row data bus connected to a row counter configured to count one or more first one-shot pulses for a predetermined time period, a pixel adder configured to sum the count, and a digital-to-analog converter connected to the pixel adder to convert sum to an analog signal representative of an energy readout. A timing logic circuit configured to provide a validation signal to a counter control logic circuit, and the counter control logic circuit configured to provide one of a start signal, a stop signal, and a reset signal to the row counter.

Abstract: A pixelated gamma detector includes a scintillator column assembly having scintillator crystals and optical transparent elements alternating along a longitudinal axis, a collimator assembly having longitudinal walls separated by collimator septum, the collimator septum spaced apart to form collimator channels, the scintillator column assembly positioned adjacent to the collimator assembly so that the respective ones of the scintillator crystal are positioned adjacent to respective ones of the collimator channels, the respective ones of the optical transparent element are positioned adjacent to respective ones of the collimator septum, and a first photosensor and a second photosensor, the first and the second photosensor each connected to an opposing end of the scintillator column assembly. A system and a method for inspecting and/or detecting defects in an interior of an object are also disclosed.

Abstract: A system and method for compensating signal delay across a solid state photomultiplier. The method including determining respective arrival times of signals from a plurality of microcells of the photomultiplier, calculating a signal transit time delay difference between the respective arrival times for individual signals, correlating the individual transit time delay differences to an amount of respective signal propagation compensation for respective microcells of the photomultiplier, and introducing the respective signal propagation compensation into circuitry of the respective microcells. The method also includes at least one of adjusting a response shape of a photodiode within each of the plurality of microcells, adjusting operating parameters of a one-shot pulse circuit within the microcells, and modifying circuit design values of each microcells during fabrication of the photomultiplier.

Abstract: Embodiments of a solid state photomultiplier are provided herein. In some embodiments, a solid state photomultiplier may include an epitaxial layer, a high voltage region formed in the epitaxial layer, a low voltage region formed in the epitaxial layer, and an intermediate region disposed between the high voltage region and low voltage region, wherein the high voltage region is electrically coupled to the low voltage region via the intermediate region, and wherein at least a portion of the epitaxial layer is disposed between the high voltage region and intermediate region and between the low voltage region and the intermediate region.

Abstract: Embodiments of a solid state photomultiplier are provided herein. In some embodiments, a solid state photomultiplier may include a microcell configured to generate an analog signal when exposed to optical photons, a quench resistor electrically coupled to the microcell in series; and a first switch disposed between the quench resistor and an output of the solid state photomultiplier, the first switch electrically coupled to the microcell via the quench resistor and configured to selectively couple the microcell to the output.

Abstract: Embodiments of a solid state photomultiplier are provided herein. In some embodiments, a solid state photomultiplier may include a plurality of pixels, wherein each pixel of the plurality of pixels comprises a plurality of subpixels; and a first set of buffer amplifiers, wherein each buffer amplifier of the first set of buffer amplifiers is respectively coupled to a subpixel of the plurality of subpixels.

Abstract: A silicon photomultiplier array of microcells including a photon avalanche diode and an electronic circuit configured to provide a first one-shot pulse and a second one-shot pulse based on a detected current flowing through the photon avalanche diode. The microcells arranged in rows and columns with each microcell of a respective row connected to a respective row data bus connected to a row counter configured to count one or more first one-shot pulses for a predetermined time period, a pixel adder configured to sum the count, and a digital-to-analog converter connected to the pixel adder to convert sum to an analog signal representative of an energy readout. A timing logic circuit configured to provide a validation signal to a counter control logic circuit, and the counter control logic circuit configured to provide one of a start signal, a stop signal, and a reset signal to the row counter.

Abstract: A multichannel application specific integrated circuit (ASIC) for interfacing with an array of photodetectors in a positron emission tomography (PET) imaging system includes a front end circuit configured to be coupled to the photodetectors and to receive discrete analog signals therefrom. The ASIC further includes a time discriminating circuit operably coupled to the front end circuit and configured to generate a hit signal based on a combination of the discrete analog signals, and an energy discriminating circuit operably coupled to the front end circuit and configured to generate a summed energy output signal based on each of the discrete analog signals and summed row and column output signals based on each of the discrete analog signals. The summed energy output signal represents an energy level of the detected radiation in the array of photodetectors, and the summed row and column output signals represent a location of the detected radiation.

Abstract: A compensating current is applied at one or more points in a signal processing path to compensate for one or both of a dark or offset current present in an input signal. In certain implementations, the dark or offset current is present in a signal generated by a photomultiplier device. The dark or offset current may be monitored in an output of the signal processing path and, the monitoring being used to determine how much compensation is needed in the signal processing path and to allocate where in the signal processing path the compensation current will be applied.

Abstract: A silicon photomultiplier array including a plurality of microcells arranged in subgroupings, each microcell of a respective subgrouping providing a pulse output in response to an incident radiation. Each microcell output interconnected by respective traces of equal length to either a summing node or an integrated buffer amplifier. Each respective summing node configured to sum the pulse outputs of a first subgroup of the microcell subgroupings, and each respective integrated buffer amplifier configured to sum the pulse outputs of each microcell of a second subgrouping, the respective integrated buffer amplifier located on the silicon photomultiplier array within the second subgroup of microcells. The plurality of microcells arranged in one of columns and rows, and a first group of the arranged plurality of microcells being a mirror image of a second group of the arranged plurality of microcells about a midpoint between one of the columns and rows.

Abstract: A silicon photomultiplier includes a plurality of microcells providing a pulse output in response to an incident radiation, each microcell including circuitry configured to enable and disable the pulse output. Each microcell includes a cell disable switch. The control logic circuit controls the cell disable switch and a self-test circuit. A microcell's pulse output is disabled when the cell disable switch is in a first state. A method for self-test calibration of microcells includes providing a test enable signal to the microcells, integrating dark current for a predetermined time period, comparing the integrated dark current to a predetermined threshold level, and providing a signal if above the predetermined threshold level.

Abstract: Embodiments of a solid state photomultiplier are provided herein. In some embodiments, a photosensor may include a sensing element; and readout electronics, wherein the sensing element is AC coupled to the readout electronics. In some embodiments, a solid state photomultipler may include a microcell having; a sensing element; and readout electronics, wherein the sensing element is AC coupled to the readout electronics.

Abstract: Methods and systems for a light sensor for a gamma ray detector of a positron emission tomography (PET) imaging system is provided. The methods and systems include a plurality of micro-cells forming a micro-cell array. The methods and systems include a set of signal traces electrically coupling the plurality of micro-cells to the pin-out. The set of signal traces are configured to define a non-orthogonal signal path from each of the micro-cells to the pin-out.

Abstract: Exemplary embodiments are directed to characterizing a solid state photomultiplier (SSPM). The SSPM can be exposed to a light pulse that triggers a plurality of microcells of the SSPM and an output signal of the SSPM generated in response to the light pulse can be processed. The output signal of the SSPM can be proportional to a gain of the SSPM and a quantity of microcells in the SSPM and a value of an electrical parameter of the SSPM can be determined based on a relationship between the output signal of the SSPM and an over voltage applied to the SSPM.

Abstract: A method and an apparatus for detecting photons are disclosed. The apparatus includes a solid state photo multiplier device having a plurality of microcells that have a band gap greater than about 1.7 eV at 25° C. The solid state photo multiplier device further includes an integrated quenching device and a thin film coating associated with each of the microcells. The solid state photo multiplier device disclosed herein operates in a temperature range of about ?40° C. to about 275° C.

Abstract: In accordance with the present approach, a dark current is measured for one or more detector elements and used to determine a gain or gain compensation for the respective detector elements. In certain embodiments, the dark current is used to determine a temperature for the respective detector element and the temperature is used to determine the gain or gain compensation. In other embodiments, the dark current is used to calculate the gain or gain compensation for the respective detector element without calculating an intermediate temperature value, such as via the use of a transfer function.