Abstract: Wafer dicing methods that simplify the singulation process for certain types of integrated circuit (IC) wafer substrates that improve device reliability and die strength, reduce the width of the cutting kerf, reduce cost, and improve yield. A first method includes making ablative scribing cuts on the front side of a wafer substrate along cutting streets around the perimeter of IC dies, followed by stealth laser dicing through the backside of the wafer substrate and in substantial alignment with the ablative scribing cuts. A second method includes making stealth laser dicing through the backside of the wafer substrate and in substantial alignment with cutting streets around the perimeter of IC dies, followed by ablative scribing cuts on the front side of a wafer substrate along the cutting streets.

Abstract: Apparatus, systems, and methods are provided to generate markings on the surface of a die or substrate. The markings represent information. The markings can be annealed onto the surface of the die or substrate using a laser. Another embodiment can use an out-of-focus laser beam to mark a solder resist material.

Abstract: Apparatus, systems, and methods are provided to generate markings on the side of a substrate. The markings represent information. In an embodiment, the information provided in the markings may be used to collect information during an assembly process.

Abstract: Apparatus, systems, and methods are provided to generate markings on the surface of a die or substrate. The markings represent information. The markings can be annealed onto the surface of the die or substrate using a laser. Another embodiment can use an out-of-focus laser beam to mark a solder resist material.

Abstract: Apparatus, systems, and methods are provided to generate markings on the side of a substrate. The markings represent information. In an embodiment, the information provided in the markings may be used to collect information during an assembly process.

Abstract: Methods for concealing random or uncontrolled surface defects from a work piece surface are provided, by applying a plurality of induced controlled defects over the random defects to alter the surface texture.

Abstract: The present invention discloses an apparatus including: a laser beam directed at a wafer held by a chuck mounted on a stage inside a process chamber; a focusing mechanism for the laser beam; a steering mechanism for the laser beam; an optical scanning mechanism for the laser beam; a mechanical scanning system for the stage; an etch chemical induced by the laser beam to etch the wafer and form volatile byproducts; a gas feed line to dispense the etch chemical towards the wafer; and a gas exhaust line to remove any excess of the etch chemical and the volatile byproducts.

Abstract: Methods for removing random or uncontrolled surface defects from a work piece surface are provided, by applying a plurality of induced controlled defects over the random defects to alter the surface texture.

Abstract: Methods for removing random or uncontrolled surface defects from a work piece surface are provided, by applying a plurality of induced controlled defects over the random defects to alter the surface texture.

Abstract: Methods of forming a microelectronic structure are described. Embodiments of those methods include forming an identification mark on a portion of a backside of an individual die of a wafer by utilizing laser assisted CVD, wherein the formation of the identification mark is localized to a focal spot of the laser.

Abstract: Methods for removing random or uncontrolled surface defects from a work piece surface are provided, by applying a plurality of induced controlled defects over the random defects to alter the surface texture.

Abstract: The present invention discloses an apparatus including: a laser beam directed at a wafer held by a chuck in a process chamber; a focusing mechanism for the laser beam; a steering mechanism for the laser beam; an optical scanning mechanism for the laser beam; a mechanical scanning system for the chuck; an etch chemical induced by the laser beam to etch the wafer and form volatile byproducts; a gas feed line to dispense the etch chemical towards the wafer; and a gas exhaust line to remove any excess of the etch chemical and the volatile byproducts.

Abstract: The present invention discloses an apparatus including: a laser beam directed at a wafer held by a chuck mounted on a stage inside a process chamber; a focusing mechanism for the laser beam; a steering mechanism for the laser beam; an optical scanning mechanism for the laser beam; a mechanical scanning system for the stage; an etch chemical induced by the laser beam to etch the wafer and form volatile byproducts; a gas feed line to dispense the etch chemical towards the wafer; and a gas exhaust line to remove any excess of the etch chemical and the volatile byproducts.

Abstract: Methods of forming a microelectronic structure are described. Embodiments of those methods include forming an identification mark on a portion of a backside of an individual die of a wafer by utilizing laser assisted CVD, wherein the formation of the identification mark is localized to a focal spot of the laser.

Abstract: Methods and apparatus to dicing and/or drilling of wafers are described. In one embodiment, an electromagnetic radiation beam (e.g., a relatively high intensity, ultra-short laser beam) may be used to dice and/or drill a wafer. Other embodiments are also described.

Abstract: Apparatus, systems, and methods are provided to generate markings on the side of a substrate. The markings represent information. In an embodiment, the information provided in the markings may be used to collect information during an assembly process.

Abstract: A method is described for laser scribing or dicing portions of a workpiece using multi-source laser systems. In one embodiment, a first laser melts portions of the workpiece prior to a second laser ablating the portions of the workpiece.

Abstract: A laser micromachining method is disclosed wherein a workpiece is milled using an incident beam from a laser beam focused above the surface of the workpiece. The incident beam is guided by a plasma channel generated by the incident beam. The plasma channel, which has a relatively constant diameter over an extended distance, is generated by continual Kerr effect self-focusing balanced by ionization of air beam defocusing.

Abstract: A method is described for laser scribing or dicing portions of a workpiece using multi-source laser systems. In one embodiment, a first laser uses multiphoton absorption to lower the ablation threshold of portions of the workpiece prior to a second laser ablating the portions of the workpiece. In an alternative embodiment, a first laser uses high energy single-photon absorption to lower the ablation threshold of portions of the workpiece prior to a second laser ablating the portions of the workpiece.

Abstract: A combination of specific laser pulse durations and repetition rates are incorporated into a semiconductor wafer laser scribing/dicing process. The disclosed combination can reduce factors that contribute to thermal effects, explosive melting and evaporation, and laser/plasma interactions, thereby reducing problems with microcracks, delamination, and particles that can affect semiconductor die yields and reliability.