Patents by Inventor Sergei Zhgoon
Sergei Zhgoon has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).
-
Patent number: 10938367Abstract: An apparatus includes a substrate, a thin film piezoelectric layer, a transducer, and a low resistivity layer. The thin film piezoelectric layer is over the substrate, the transducer includes a number of electrodes in contact with the thin film piezoelectric layer and configured to transduce an acoustic wave in the thin film piezoelectric layer. The low resistivity layer is between at least a portion of the substrate and the thin film piezoelectric layer. By providing the low resistivity layer between at least a portion of the substrate and the thin film piezoelectric layer, a spurious response of the apparatus may be significantly reduced, thereby improving the performance thereof.Type: GrantFiled: June 15, 2017Date of Patent: March 2, 2021Assignee: Qorvo US, Inc.Inventors: Kushal Bhattacharjee, Sergei Zhgoon
-
Patent number: 9998088Abstract: A MEMS vibrating device includes a substrate, at least one anchor on a surface of the substrate, and a vibrating body suspended over the substrate by the at least one anchor. The vibrating body includes a first piezoelectric thin-film layer, a second piezoelectric thin-film layer over the first piezoelectric thin-film layer, and an inter-digital transducer embedded between the first piezoelectric thin-film layer and the second piezoelectric thin-film layer. Embedding the inter-digital transducer between the first piezoelectric thin-film layer and the second piezoelectric thin-film layer may result in enhanced vibrational characteristics of the MEMS vibrating device, thereby increasing the performance thereof.Type: GrantFiled: May 4, 2015Date of Patent: June 12, 2018Assignee: Qorvo US, Inc.Inventors: Kushal Bhattacharjee, Sergei Zhgoon
-
Publication number: 20170288629Abstract: An apparatus includes a substrate, a thin film piezoelectric layer, a transducer, and a low resistivity layer. The thin film piezoelectric layer is over the substrate, the transducer includes a number of electrodes in contact with the thin film piezoelectric layer and configured to transduce an acoustic wave in the thin film piezoelectric layer. The low resistivity layer is between at least a portion of the substrate and the thin film piezoelectric layer. By providing the low resistivity layer between at least a portion of the substrate and the thin film piezoelectric layer, a spurious response of the apparatus may be significantly reduced, thereby improving the performance thereof.Type: ApplicationFiled: June 15, 2017Publication date: October 5, 2017Inventors: Kushal Bhattacharjee, Sergei Zhgoon
-
MEMS vibrating structure using an orientation dependent single-crystal piezoelectric thin film layer
Patent number: 9391588Abstract: A micro-electrical-mechanical system (MEMS) vibrating structure includes a carrier substrate, a first anchor, a second anchor, a single crystal piezoelectric body, and a conducting layer. The first anchor and the second anchor are provided on the surface of the carrier substrate. The single-crystal piezoelectric body is suspended between the first anchor and the second anchor, and includes a uniform crystalline orientation defined by a set of Euler angles. The single-crystal piezoelectric body includes a first surface parallel to and facing the surface of the carrier substrate on which the first anchor and the second anchor are formed and a second surface opposite the first surface. The conducting layer is inter-digitally dispersed, and is formed on the second surface of the single-crystal piezoelectric body. The first surface of the single-crystal piezoelectric body is left exposed.Type: GrantFiled: September 19, 2013Date of Patent: July 12, 2016Assignee: RF Micro Devices, Inc.Inventors: Kushal Bhattacharjee, Sergei Zhgoon -
MEMS vibrating structure using an orientation dependent single-crystal piezoelectric thin film layer
Patent number: 9385685Abstract: A micro-electrical-mechanical system (MEMS) vibrating structure includes a carrier substrate, a first anchor, a second anchor, a single crystal piezoelectric body, a first conducting layer, and a second conducting layer. The first anchor and the second anchor are provided on the surface of the carrier substrate. The single-crystal piezoelectric body is suspended between the first anchor and the second anchor, and includes a uniform crystalline orientation defined by a set of Euler angles. The single-crystal piezoelectric body includes a first surface parallel to and facing the surface of the carrier substrate on which the first anchor and the second anchor are formed and a second surface opposite the first surface. The first conducting layer is inter-digitally dispersed on the second surface of the single-crystal piezoelectric body. The second conducting layer is inter-digitally dispersed on the first surface of the single-crystal piezoelectric body.Type: GrantFiled: September 19, 2013Date of Patent: July 5, 2016Assignee: RF Micro Devices, Inc.Inventors: Kushal Bhattacharjee, Sergei Zhgoon -
Publication number: 20150318838Abstract: A MEMS vibrating device includes a substrate, at least one anchor on a surface of the substrate, and a vibrating body suspended over the substrate by the at least one anchor. The vibrating body includes a first piezoelectric thin-film layer, a second piezoelectric thin-film layer over the first piezoelectric thin-film layer, and an inter-digital transducer embedded between the first piezoelectric thin-film layer and the second piezoelectric thin-film layer. Embedding the inter-digital transducer between the first piezoelectric thin-film layer and the second piezoelectric thin-film layer may result in enhanced vibrational characteristics of the MEMS vibrating device, thereby increasing the performance thereof.Type: ApplicationFiled: May 4, 2015Publication date: November 5, 2015Inventors: Kushal Bhattacharjee, Sergei Zhgoon
-
MEMS VIBRATING STRUCTURE USING AN ORIENTATION DEPENDENT SINGLE-CRYSTAL PIEZOELECTRIC THIN FILM LAYER
Publication number: 20140210314Abstract: A micro-electrical-mechanical system (MEMS) vibrating structure includes a carrier substrate, a first anchor, a second anchor, a single crystal piezoelectric body, and a conducting layer. The first anchor and the second anchor are provided on the surface of the carrier substrate. The single-crystal piezoelectric body is suspended between the first anchor and the second anchor, and includes a uniform crystalline orientation defined by a set of Euler angles. The single-crystal piezoelectric body includes a first surface parallel to and facing the surface of the carrier substrate on which the first anchor and the second anchor are formed and a second surface opposite the first surface. The conducting layer is inter-digitally dispersed, and is formed on the second surface of the single-crystal piezoelectric body. The first surface of the single-crystal piezoelectric body is left exposed.Type: ApplicationFiled: September 19, 2013Publication date: July 31, 2014Applicant: RF Micro Devices, Inc.Inventors: Kushal Bhattacharjee, Sergei Zhgoon -
MEMS VIBRATING STRUCTURE USING AN ORIENTATION DEPENDENT SINGLE-CRYSTAL PIEZOELECTRIC THIN FILM LAYER
Publication number: 20140210315Abstract: A micro-electrical-mechanical system (MEMS) vibrating structure includes a carrier substrate, a first anchor, a second anchor, a single crystal piezoelectric body, a first conducting layer, and a second conducting layer. The first anchor and the second anchor are provided on the surface of the carrier substrate. The single-crystal piezoelectric body is suspended between the first anchor and the second anchor, and includes a uniform crystalline orientation defined by a set of Euler angles. The single-crystal piezoelectric body includes a first surface parallel to and facing the surface of the carrier substrate on which the first anchor and the second anchor are formed and a second surface opposite the first surface. The first conducting layer is inter-digitally dispersed on the second surface of the single-crystal piezoelectric body. The second conducting layer is inter-digitally dispersed on the first surface of the single-crystal piezoelectric body.Type: ApplicationFiled: September 19, 2013Publication date: July 31, 2014Applicant: RF Micro Devices, Inc.Inventors: Kushal Bhattacharjee, Sergei Zhgoon -
Patent number: 8490260Abstract: A method of manufacturing composite structures, or composite substrates, for a Surface Acoustic Wave (SAW) device are provided. In one embodiment of the present disclosure, a piezoelectric substrate is provided. A supporting substrate is formed over a first surface of the piezoelectric substrate. The first surface of the piezoelectric substrate may be unpolished. A second surface of the piezoelectric substrate is then processed to a desired thickness and polished. SAW device components such as, for example, interdigitated transducers (IDTs) and reflectors are then formed on the polished surface of the piezoelectric substrate. The supporting substrate may be formed using any desired type of deposition or growth process.Type: GrantFiled: January 7, 2008Date of Patent: July 23, 2013Assignee: RF Micro Devices, Inc.Inventors: Sergei Zhgoon, Kushal Bhattacharjee
-
Patent number: 8011074Abstract: The present invention provides a composite structure having a supporting substrate between a piezoelectric substrate and a compensation layer. The materials used to form the piezoelectric substrate and the compensation layer in isolation, have higher thermal coefficients of expansion (TCE) relative to the TCE of the materials forming the supporting substrate. Once the composite structure is created, the piezoelectric substrate and compensation layer tend to expand and contract in a similar manner as temperature changes. The expansion and contraction forces applied to the supporting substrate by the piezoelectric substrate due to temperature changes are substantially countered by similar opposing forces applied by the compensation layer, resulting in the opposing forces substantially counteracting one another.Type: GrantFiled: January 15, 2008Date of Patent: September 6, 2011Assignee: RF Micro Devices, Inc.Inventors: Kushal Bhattacharjee, Sergei Zhgoon
-
Patent number: 7408286Abstract: The present invention provides a composite structure having a supporting substrate between a piezoelectric substrate and a compensation layer. The materials used to form the piezoelectric substrate and the compensation layer in isolation, have higher thermal coefficients of expansion (TCE) relative to the TCE of the materials forming the supporting substrate. Once the composite structure is created, the piezoelectric substrate and compensation layer tend to expand and contract in a similar manner as temperature changes. The expansion and contraction forces applied to the supporting substrate by the piezoelectric substrate due to temperature changes are substantially countered by similar opposing forces applied by the compensation layer, resulting in the opposing forces substantially counteracting one another.Type: GrantFiled: January 17, 2007Date of Patent: August 5, 2008Assignee: RF Micro Devices, Inc.Inventors: Kushal Bhattacharjee, Sergei Zhgoon
-
Publication number: 20080169724Abstract: The present invention provides a composite structure having a supporting substrate between a piezoelectric substrate and a compensation layer. The materials used to form the piezoelectric substrate and the compensation layer in isolation, have higher thermal coefficients of expansion (TCE) relative to the TCE of the materials forming the supporting substrate. Once the composite structure is created, the piezoelectric substrate and compensation layer tend to expand and contract in a similar manner as temperature changes. The expansion and contraction forces applied to the supporting substrate by the piezoelectric substrate due to temperature changes are substantially countered by similar opposing forces applied by the compensation layer, resulting in the opposing forces substantially counteracting one another.Type: ApplicationFiled: January 17, 2007Publication date: July 17, 2008Applicant: RF MICRO DEVICES, INC.Inventors: Kushal Bhattacharjee, Sergei Zhgoon
-
Publication number: 20080168638Abstract: The present invention provides a composite structure having a supporting substrate between a piezoelectric substrate and a compensation layer. The materials used to form the piezoelectric substrate and the compensation layer in isolation, have higher thermal coefficients of expansion (TCE) relative to the TCE of the materials forming the supporting substrate. Once the composite structure is created, the piezoelectric substrate and compensation layer tend to expand and contract in a similar manner as temperature changes. The expansion and contraction forces applied to the supporting substrate by the piezoelectric substrate due to temperature changes are substantially countered by similar opposing forces applied by the compensation layer, resulting in the opposing forces substantially counteracting one another.Type: ApplicationFiled: January 15, 2008Publication date: July 17, 2008Applicant: RF MICRO DEVICES, INC.Inventors: Kushal Bhattacharjee, Sergei Zhgoon