Patents by Inventor Sergej Filonovich

Sergej Filonovich has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • BLISTER-FREE POLYCRYSTALLINE SILICON FOR SOLAR CELLS
    Publication number: 20220020889
    Abstract: Described herein are methods of fabricating solar cells. In an example, a method of fabricating a solar cell includes forming an amorphous dielectric layer on the back surface of a substrate opposite a light-receiving surface of the substrate. The method also includes forming a microcrystalline silicon layer on the amorphous dielectric layer by plasma enhanced chemical vapor deposition (PECVD). The method also includes forming an amorphous silicon layer on the microcrystalline silicon layer by PECVD. The method also includes annealing the microcrystalline silicon layer and the amorphous silicon layer to form a homogeneous polycrystalline silicon layer from the microcrystalline silicon layer and the amorphous silicon layer. The method also includes forming an emitter region from the homogeneous polycrystalline silicon layer.
    Type: Application
    Filed: August 23, 2021
    Publication date: January 20, 2022
    Inventors: Taiqing Qiu, Gilles Olav Tanguy Sylvain Poulain, Périne Jaffrennou, Nada Habka, Sergej Filonovich
  • Blister-free polycrystalline silicon for solar cells
    Patent number: 11101398
    Abstract: Described herein are methods of fabricating solar cells. In an example, a method of fabricating a solar cell includes forming an amorphous dielectric layer on the back surface of a substrate opposite a light-receiving surface of the substrate. The method also includes forming a microcrystalline silicon layer on the amorphous dielectric layer by plasma enhanced chemical vapor deposition (PECVD). The method also includes forming an amorphous silicon layer on the microcrystalline silicon layer by PECVD. The method also includes annealing the microcrystalline silicon layer and the amorphous silicon layer to form a homogeneous polycrystalline silicon layer from the microcrystalline silicon layer and the amorphous silicon layer. The method also includes forming an emitter region from the homogeneous polycrystalline silicon layer.
    Type: Grant
    Filed: October 28, 2019
    Date of Patent: August 24, 2021
    Assignees: SunPower Corporation, Total Marketing Services
    Inventors: Taiqing Qiu, Gilles Olav Tanguy Sylvain Poulain, Périne Jaffrennou, Nada Habka, Sergej Filonovich
  • BLISTER-FREE POLYCRYSTALLINE SILICON FOR SOLAR CELLS
    Publication number: 20200066930
    Abstract: Described herein are methods of fabricating solar cells. In an example, a method of fabricating a solar cell includes forming an amorphous dielectric layer on the back surface of a substrate opposite a light-receiving surface of the substrate. The method also includes forming a microcrystalline silicon layer on the amorphous dielectric layer by plasma enhanced chemical vapor deposition (PECVD). The method also includes forming an amorphous silicon layer on the microcrystalline silicon layer by PECVD. The method also includes annealing the microcrystalline silicon layer and the amorphous silicon layer to form a homogeneous polycrystalline silicon layer from the microcrystalline silicon layer and the amorphous silicon layer. The method also includes forming an emitter region from the homogeneous polycrystalline silicon layer.
    Type: Application
    Filed: October 28, 2019
    Publication date: February 27, 2020
    Inventors: Taiqing Qiu, Gilles Olav Tanguy Sylvain Poulain, Périne Jaffrennou, Nada Habka, Sergej Filonovich
  • Blister-free polycrystalline silicon for solar cells
    Patent number: 10516071
    Abstract: Described herein are methods of fabricating solar cells. In an example, a method of fabricating a solar cell includes forming an amorphous dielectric layer on the back surface of a substrate opposite a light-receiving surface of the substrate. The method also includes forming a microcrystalline silicon layer on the amorphous dielectric layer by plasma enhanced chemical vapor deposition (PECVD). The method also includes forming an amorphous silicon layer on the microcrystalline silicon layer by PECVD. The method also includes annealing the microcrystalline silicon layer and the amorphous silicon layer to form a homogeneous polycrystalline silicon layer from the microcrystalline silicon layer and the amorphous silicon layer. The method also includes forming an emitter region from the homogeneous polycrystalline silicon layer.
    Type: Grant
    Filed: January 30, 2017
    Date of Patent: December 24, 2019
    Assignees: SunPower Corporation, Total Marketing Services
    Inventors: Taiqing Qiu, Gilles Olav Tanguy Sylvain Poulain, Perine Jaffrennou, Nada Habka, Sergej Filonovich
  • BLISTER-FREE POLYCRYSTALLINE SILICON FOR SOLAR CELLS
    Publication number: 20170141255
    Abstract: Described herein are methods of fabricating solar cells. In an example, a method of fabricating a solar cell includes forming an amorphous dielectric layer on the back surface of a substrate opposite a light-receiving surface of the substrate. The method also includes forming a microcrystalline silicon layer on the amorphous dielectric layer by plasma enhanced chemical vapor deposition (PECVD). The method also includes forming an amorphous silicon layer on the microcrystalline silicon layer by PECVD. The method also includes annealing the microcrystalline silicon layer and the amorphous silicon layer to form a homogeneous polycrystalline silicon layer from the microcrystalline silicon layer and the amorphous silicon layer. The method also includes forming an emitter region from the homogeneous polycrystalline silicon layer.
    Type: Application
    Filed: January 30, 2017
    Publication date: May 18, 2017
    Inventors: Taiqing Qiu, Gilles Olav Tanguy Sylvain Poulain, Perine Jaffrennou, Nada Habka, Sergej Filonovich
  • Blister-free polycrystalline silicon for solar cells
    Patent number: 9559245
    Abstract: Described herein are methods of fabricating solar cells. In an example, a method of fabricating a solar cell includes forming an amorphous dielectric layer on the back surface of a substrate opposite a light-receiving surface of the substrate. The method also includes forming a microcrystalline silicon layer on the amorphous dielectric layer by plasma enhanced chemical vapor deposition (PECVD). The method also includes forming an amorphous silicon layer on the microcrystalline silicon layer by PECVD. The method also includes annealing the microcrystalline silicon layer and the amorphous silicon layer to form a homogeneous polycrystalline silicon layer from the microcrystalline silicon layer and the amorphous silicon layer. The method also includes forming an emitter region from the homogeneous polycrystalline silicon layer.
    Type: Grant
    Filed: June 23, 2015
    Date of Patent: January 31, 2017
    Assignees: SunPower Corporation, Total Marketing Services
    Inventors: Taiqing Qiu, Gilles Olav Tanguy Sylvain Poulain, Périne Jaffrennou, Nada Habka, Sergej Filonovich
  • BLISTER-FREE POLYCRYSTALLINE SILICON FOR SOLAR CELLS
    Publication number: 20160284922
    Abstract: Described herein are methods of fabricating solar cells. In an example, a method of fabricating a solar cell includes forming an amorphous dielectric layer on the back surface of a substrate opposite a light-receiving surface of the substrate. The method also includes forming a microcrystalline silicon layer on the amorphous dielectric layer by plasma enhanced chemical vapor deposition (PECVD). The method also includes forming an amorphous silicon layer on the microcrystalline silicon layer by PECVD. The method also includes annealing the microcrystalline silicon layer and the amorphous silicon layer to form a homogeneous polycrystalline silicon layer from the microcrystalline silicon layer and the amorphous silicon layer. The method also includes forming an emitter region from the homogeneous polycrystalline silicon layer.
    Type: Application
    Filed: June 23, 2015
    Publication date: September 29, 2016
    Inventors: Taiqing Qiu, Gilles Olav Tanguy Sylvain Poulain, Périne Jaffrennou, Nada Habka, Sergej Filonovich