Abstract: A high precision fiber-optic device and method are developed for measuring a temperature profile in a long length area. The temperature profile is derived based on a ratio between the intensities of anti-Stokes Raman and Stokes Raman backscattered components. The power output of the amplified pulsed optical radiation delivered to the sensing optical fiber via a reference optical fiber, is controlled such as to maintain a substantially fixed intensity level of the anti-Stokes Raman component of the optical radiation back scattered from the reference optical fiber. Controlling the output power of the of the amplified pulsed optical radiation is carried out based on a feedback representative of the intensity level of the anti-Stokes Raman component of the optical radiation back scattered from the reference optical fiber.

Abstract: A high precision fiber-optic device and method are developed for measuring a temperature profile in a long length area. The temperature profile is derived based on a ratio between the intensities of anti-Stokes Raman and Stokes Raman backscattered components. The power output of the amplified pulsed optical radiation delivered to the sensing optical fiber via a reference optical fiber, is controlled such as to maintain a substantially fixed intensity level of the anti-Stokes Raman component of the optical radiation back scattered from the reference optical fiber. Controlling the output power of the of the amplified pulsed optical radiation is carried out based on a feedback representative of the intensity level of the anti-Stokes Raman component of the optical radiation back scattered from the reference optical fiber.

Abstract: A method for etching a chromium layer in a vacuum chamber which may comprise introducing a halogen compound into the vacuum chamber, directing an electron beam onto the area of the chromium layer to be etched and/or introducing an oxygen including compound into the vacuum chamber. A further method for the highly resolved removal of a layer out of metal and/or metal oxide which may be arranged on an isolator or a substrate having poor thermal conductivity, may comprise arranging the layer inside a vacuum chamber, bombarding the layer with a focused electron beam with an energy of 3-30 keV, wherein the electron beam may be guided such that the energy transfer per time and area causes a localized heating of the layer above its melting and/or vaporization point and wherein the removal of the layer may be performed without the supply of reaction gases into the vacuum chamber.

Abstract: A method and an apparatus for smoothening rough edges of lithographic patterns on semiconductor wafers and thus improving quality of the elements that constitute the target pattern by softening the surface layer of the rough edges to the extent at which smoothening may occur under the effect of forces of surface tension. The pattern is treated under normal pressure in the atmosphere of a phase of the aforementioned organic substance selected from vapor of an organic vapor or mist of organic substance in nitrogen or another gas. Two modes are possible: 1) direct diffusion of organic molecules into the surface layer of the pattern material; or 2) condensation onto the pattern surface with the formation of an extremely thin organic film, which also leads to diffusion of the organic molecules into the pattern material.

Abstract: A display device (10) having pixels elements (118) divided into subpixel zones (131), so that each subpixel zone is associated to a predetermined viewing direction (160, 162, and 164). The light outputs of subpixel zones are controlled by an array of scanning focused electron beams (82). Each electron beam corresponds to a different pixel. The subpixel zones of the pixel are activated by electron beam in accordance with the input data signal (280). An array of microlenses (120) is provided in front of the pixels, so that each column of microlenses corresponds to a different column of pixels. The microlens projects the light outputs of the subpixel zones of the corresponding pixel into observation directions (170, 204) creating direction-dependent view of the pixel. The thin-panel display device is capable generating high-resolution real-like 3D images of scenes, objects, and models. Observers do not require wearing any special devices or glasses.

Abstract: A method for etching a chromium layer in a vacuum chamber which may comprise introducing a halogen compound into the vacuum chamber, directing an electron beam onto the area of the chromium layer to be etched and/or introducing an oxygen including compound into the vacuum chamber. A further method for the highly resolved removal of a layer out of metal and/or metal oxide which may be arranged on an isolator or a substrate having poor thermal conductivity, may comprise arranging the layer inside a vacuum chamber, bombarding the layer with a focused electron beam with an energy of 3-30 keV, wherein the electron beam may be guided such that the energy transfer per time and area causes a localized heating of the layer above its melting and/or vaporization point and wherein the removal of the layer may be performed without the supply of reaction gases into the vacuum chamber.

Abstract: The present invention relates to methods of predicting proximity heating of resists in electron beam lithography in real-time as the writing proceeds enabling beam compensation in current and/or dwell time to be performed during writing. A method of using a precomputed kernel capable of proximity resist temperature evaluation in real-time as beam writing proceeds by scalar product of the kernel with a graded cell size coverage map. A shifted impulse response function is shown to give the kernel values accurate to within a few percent.

Abstract: A MUX, DEMUX or integrated combination MUX/DEMUX utilizing a discrete dispersion device (herein referred to as “D3” device), which includes at least one input port, at least one output port and an optical planar waveguide comprising a synergetic photonic bandgap quasi-crystal (“PBQC”) for guiding and supporting optical signals in a work bandwidth. The D3 device achieves a flat-top response for each channel, high channel isolation and background noise suppression.

Abstract: The present invention provides a photonic multi-bandgap structure, herein also referred to as photonic bandgap quasi-crystal (“PBQC”), that can direct light, having wavelength components within a selected passband (&Dgr;&lgr;), from an input port, to a predefined output port, while providing an integrating element for Planar Lightwave Circuts. A photonic bandgap quasi-crystal of the invention combines in a planar waveguide spectrally selective properties of gratings, focusing properties of elliptical mirrors, superposition properties of thick holograms, photonic bandgaps of periodic structures, and flexibility of binary lithography. A photonic structure of the invention can be utilized, for example, as an integrating spectrally sensitive element in a variety of optical devices that can include, but are not limited to, optical switches, optical multiplexer/demultiplexers, multi-wavelength lasers, and channel monitors in Wavelength Division Multiplexing (WDM) telecommunications system.

Abstract: The present invention provides a photonic multi-bandgap structure, herein also referred to as photonic bandgap quasi-crystal (“PBQC”), that can direct light, having wavelength components within a selected passband (&Dgr;&lgr;), from an input port, to a predefined output port, while providing an integrating element for Planar Lightwave Circuits. A photonic bandgap quasi-crystal of the invention combines in a planar waveguide spectrally selective properties of gratings, focusing properties of elliptical mirrors, superposition properties of thick holograms, photonic bandgaps of periodic structures, and flexibility of binary lithography. A photonic structure of the invention can be utilized, for example, as an integrating spectrally sensitive element in a variety of optical devices that can include, but are not limited to, optical switches, optical multiplexer/demultiplexers, multi-wavelength lasers, and channel monitors in Wavelength Division Mulitplexing (WDM) telecommunications system.

Abstract: The present invention relates to methods of predicting proximity heating of resists in electron beam lithography in real-time as the writing proceeds enabling beam compensation in current and/or dwell time to be performed during writing. A method of using a precomputed kernel capable of proximity resist temperature evaluation in real-time as beam writing proceeds by scalar product of the kernel with a graded cell size coverage map. A shifted impulse response function is shown to give the kernel values accurate to within a few percent.

Abstract: A charged particle beam column for generating a variable shaped (in cross section) charged particle beam. The charged particle beam column includes: a source of a charged particle beam; a first aperture defining a first opening positioned coaxial to the beam and spaced apart from the source; a second aperture defining a second opening positioned coaxial to the beam and spaced apart from the first aperture; a third aperture defining a third opening positioned coaxial to the beam and spaced apart from the second aperture; an imaging device coaxial to the beam, where the imaging device controls focusing of the beam; and at least two deflection devices coaxial to the beam which controls a path of the beam through the openings.

Abstract: The present invention relates to methods and procedures for determining resist temperature during energy beam lithography and adjusting process parameters, including reducing the beam current, to compensate for increased resist sensitivity due to heating. The present invention relates to methods of predicting resist heating in real-time as the writing proceeds thereby enabling beam compensation to be performed in real-time. A linear superposition approximation is described that provides a procedure for estimating the resist temperature at the point presently being written from previously written points. The present invention makes use of the thermal history of the pattern previously written as that history is recorded in the line of pixels immediately preceding the line whose temperature is to be determined prior to e-beam exposure, and a single number representing the thermal history of lines written before the immediately preceding line.

Abstract: The present invention relates to methods of predicting proximity heating of resists in electron beam lithography in real-time as the writing proceeds enabling beam compensation in current and/or dwell time to be performed during writing. A shifted impulse response function is shown to give proximity heating results accurate to within a few percent. A method of using a precomputed kernel capable of proximity resist temperature evaluation in real-time as beam writing proceeds.

Abstract: A shield assembly for reducing electron fogging effects in electron beam lithography. This shield, located between an electron beam column final aperture and the beam target, is of multiple vanes with sharp edges pointing towards the electron beam incident point on the target; the vanes are conically shaped and concentric around the electron beam path, which travels through the center of the assembly. Additionally, the sharp edges are such that they present oblique surfaces at the ends of the vanes angled between 10° and 20° relative to the outer vane surface and these oblique surfaces face towards the electron beam path. Furthermore, the shield assembly may also have the vanes angled towards the beam incident point such that the vertex of the conical vane assembly is coincident with the beam incident point.

Abstract: An electron beam pattern generating system for exposing a pattern on a substrate using a raster scan method. The system stores a rasterized representation of the pattern as a plurality of regular pixel dose exposure levels. These pixel dose exposure levels are evaluated by the system for one or more proximity effects and corrections to the dose exposure level and/or pixel location are calculated. The system includes apparatus for both calculation and storage of intermediate and final results as required. As they are calculated, the corrections are provided to an exposure dose modulator wherein they are applied to forming the pattern. Thus corrections for both long range and short range proximity effects due to both electron scattering and heating as well as for proximity effects due to global thermal expansion can be calculated and provided during run-time and a corrected pattern exposed.