Patents by Inventor Sergey Anderson

Sergey Anderson has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Patent number: 10903806
    Abstract: An integrated circuit that includes a die with an active radio frequency (RF) unit embedded thereon; a first port for receiving an output signal from the active RF unit; a harmonic filter that comprises a first harmonic filter inductor; and a first RF inductive load that is electrically coupled to the first port and is magnetically coupled to the first harmonic filter inductor.
    Type: Grant
    Filed: September 18, 2016
    Date of Patent: January 26, 2021
    Assignee: DSP GROUP LTD.
    Inventors: Sergey Anderson, Ron Pongratz
  • Patent number: 10615751
    Abstract: An integrated circuit RF power amplifier that includes a substrate; a low power (LP) amplifier; a high-power (HP) amplifier; and an asymmetrical parallel-combining transformer. The substrate is configured to supports the LP amplifier, the HP amplifier and the asymmetrical parallel-combining transformer. The LP amplifier is configured to amplify a LP RF input signal to provide a LP amplified signal. The HP amplifier is configured to amplify a HP RF input signal to provide a HP amplified signal. The HP amplified signal has maximal intensity that exceeds a maximal intensity of the LP amplified signal.
    Type: Grant
    Filed: August 2, 2018
    Date of Patent: April 7, 2020
    Assignee: DSP Group Ltd.
    Inventors: Sergey Anderson, Nadav Snir
  • Publication number: 20190058445
    Abstract: An integrated circuit RF power amplifier that includes a substrate; a low power (LP) amplifier; a high-power (HP) amplifier; and an asymmetrical parallel-combining transformer. The substrate is configured to supports the LP amplifier, the HP amplifier and the asymmetrical parallel-combining transformer. The LP amplifier is configured to amplify a LP RF input signal to provide a LP amplified signal. The HP amplifier is configured to amplify a HP RF input signal to provide a HP amplified signal. The HP amplified signal has maximal intensity that exceeds a maximal intensity of the LP amplified signal.
    Type: Application
    Filed: August 2, 2018
    Publication date: February 21, 2019
    Inventors: Sergey Anderson, Nadav Snir
  • Patent number: 9866178
    Abstract: An integrated circuit that includes a die with an active radio frequency (RF) unit embedded thereon; a first port for receiving an output signal from the active RF unit; a harmonic filter that comprises a first harmonic filter inductor; and a first RF inductive load that is electrically coupled to the first port and is magnetically coupled to the first harmonic filter inductor.
    Type: Grant
    Filed: September 18, 2016
    Date of Patent: January 9, 2018
    Assignee: DSP GROUP LTD.
    Inventor: Sergey Anderson
  • Patent number: 9859852
    Abstract: A novel and useful radio frequency (RF) front end module (FEM) circuit that provides high linearity and power efficiency and meets the requirements of modern wireless communication standards such as 802.11 WLAN, 3G and 4G cellular standards, Bluetooth, ZigBee, etc. The configuration of the FEM circuit permits the use of common, relatively low cost semiconductor fabrication techniques such as standard CMOS processes. The FEM circuit includes a power amplifier made up of one or more sub-amplifiers having high and low power circuits and whose outputs are combined to yield the total desired power gain. An integrated multi-tap transformer having primary and secondary windings arranged in a novel configuration provide efficient power combining and transfer to the antenna of the power generated by the individual sub-amplifiers.
    Type: Grant
    Filed: September 23, 2013
    Date of Patent: January 2, 2018
    Assignee: DSP GROUP LTD.
    Inventors: Sergey Anderson, Alexander Mostov, Eli Schwartz
  • Patent number: 9813031
    Abstract: A novel and useful radio frequency (RF) front end module (FEM) circuit that provides high linearity and power efficiency and meets the requirements of modern wireless communication standards such as 802.11 wireless local area network (WLAN), third generation (3G) and fourth generation (4G) cellular standards, BLUETOOTH™, ZIGBEE™, etc. The configuration of the FEM circuit permits the use of common, relatively low cost semiconductor fabrication techniques such as standard Complementary metal-oxide-semiconductor (CMOS) processes. The FEM circuit includes a power amplifier made up of one or more sub-amplifiers having high and low power circuits and whose outputs are combined to yield the total desired power gain. An integrated multi-tap transformer having primary and secondary windings arranged in a novel configuration provide efficient power combining and transfer to the antenna of the power generated by the individual sub-amplifiers.
    Type: Grant
    Filed: November 26, 2015
    Date of Patent: November 7, 2017
    Assignee: DSP GROUP LTD.
    Inventors: Sergey Anderson, Alexander Mostov, Eli Schwartz, Ron Pongratz
  • Patent number: 9742360
    Abstract: A novel and useful linear, efficient, smart wideband CMOS hybrid power amplifier that combined an analog linear amplification path and a digital power amplification (DPA) path. PA path control logic analyzes the input I and Q signals and determines which amplification paths to steer the input I and Q signals to. The analog linear amplification path comprises digital to analog converters for both I and Q paths and one or more analog linear power amplifiers. The digital power amplification path comprises I and Q up-sampling circuits and I and Q RF DAC circuits (e.g., digital PA circuits). In operation, the PA path control logic compares the I and Q signals to thresholds (which may or may not be different) and based on the comparisons, selects one or more paths for the input I and Q signals. Whether the signals from the analog and digital amplification paths are to be combined or selected (i.e.
    Type: Grant
    Filed: March 21, 2016
    Date of Patent: August 22, 2017
    Assignee: DSP GROUP LTD.
    Inventors: Sergey Anderson, Udi Suissa
  • Patent number: 9667206
    Abstract: A novel and useful radio frequency (RF) front end module (FEM) circuit that provides high linearity and power efficiency and meets the requirements of modern wireless communication standards such as 802.11 WLAN, 3G and 4G cellular standards, Bluetooth, ZigBee, etc. The configuration of the FEM circuit permits the use of common, relatively low cost semiconductor fabrication techniques such as standard CMOS processes. The FEM circuit includes a power amplifier made up of one or more sub-amplifiers having high and low power circuits and whose outputs are combined to yield the total desired power gain. An integrated multi-tap transformer having primary and secondary windings arranged in a novel configuration provide efficient power combining and transfer to the antenna of the power generated by the individual sub-amplifiers.
    Type: Grant
    Filed: January 22, 2015
    Date of Patent: May 30, 2017
    Assignee: DSP GROUP Ltd.
    Inventors: Sergey Anderson, Alexander Mostov, Eli Schwartz, Ron Pongratz, Ilya Sima
  • Patent number: 9608577
    Abstract: A novel and useful radio frequency (RF) front end module (FEM) circuit that provides high linearity and power efficiency and meets the requirements of modern wireless communication standards such as 802.11 WLAN, 3G and 4G cellular standards, Bluetooth, ZigBee, etc. The configuration of the FEM circuit permits the use of common, relatively low cost semiconductor fabrication techniques such as standard CMOS processes. The FEM circuit includes a power amplifier made up of one or more sub-amplifiers having high and low power circuits and whose outputs are combined to yield the total desired power gain. An integrated multi-tap transformer having primary and secondary windings arranged in a novel configuration provide efficient power combining and transfer to the antenna of the power generated by the individual sub-amplifiers.
    Type: Grant
    Filed: September 23, 2013
    Date of Patent: March 28, 2017
    Assignee: DSP GROUP LTD.
    Inventors: Alexander Mostov, Sergey Anderson, Udi Suissa, Ilya Sima, Avi Bauer
  • Publication number: 20170077877
    Abstract: An integrated circuit that includes a die with an active radio frequency (RF) unit embedded thereon; a first port for receiving an output signal from the active RF unit; a harmonic filter that comprises a first harmonic filter inductor; and a first RF inductive load that is electrically coupled to the first port and is magnetically coupled to the first harmonic filter inductor.
    Type: Application
    Filed: September 18, 2016
    Publication date: March 16, 2017
    Inventor: Sergey Anderson
  • Publication number: 20170070199
    Abstract: An integrated circuit that includes a die with an active radio frequency (RF) unit embedded thereon; a first port for receiving an output signal from the active RF unit; a harmonic filter that comprises a first harmonic filter inductor; and a first RF inductive load that is electrically coupled to the first port and is magnetically coupled to the first harmonic filter inductor.
    Type: Application
    Filed: September 18, 2016
    Publication date: March 9, 2017
    Inventors: Sergey Anderson, Ron Pongratz, Eli Schwartz, Ilya Sima
  • Patent number: 9484977
    Abstract: The present invention is a novel and useful RF transformer based transmit/receive (TX/RX) integrated RF switch. In one embodiment of the invention, the TX/RX RF switch circuit is based on the use of an RF transformer which functions as (1) the PA output transformer during TX mode and (2) as a series inductance in an LNA matching network during receive mode. Thus, the RF transformer plays a dual function or role. Antenna diversity is achieved by having multiple antennas each having an associated antenna switch connected to the output transformer. The TX/RX switch of the invention reduces the number of switches required for antenna diversity to a minimum and minimizes RF losses in the system. The TX/RX switch is suitable for use with modern wireless communication standards such as DECT, 802.11 WLAN, Bluetooth, ZigBee, etc. The configuration of the TX/RX circuit permits the use of common, relatively low cost semiconductor fabrication techniques such as standard CMOS processes.
    Type: Grant
    Filed: May 14, 2014
    Date of Patent: November 1, 2016
    Assignee: DSP GROUP, LTD.
    Inventors: Sergey Anderson, Sharon Betzalel
  • Publication number: 20160276986
    Abstract: A novel and useful linear, efficient, smart wideband CMOS hybrid power amplifier that combined an analog linear amplification path and a digital power amplification (DPA) path. PA path control logic analyzes the input I and Q signals and determines which amplification paths to steer the input I and Q signals to. The analog linear amplification path comprises digital to analog converters for both I and Q paths and one or more analog linear power amplifiers. The digital power amplification path comprises I and Q up-sampling circuits and I and Q RF DAC circuits (e.g., digital PA circuits). In operation, the PA path control logic compares the I and Q signals to thresholds (which may or may not be different) and based on the comparisons, selects one or more paths for the input I and Q signals. Whether the signals from the analog and digital amplification paths are to be combined or selected (i.e.
    Type: Application
    Filed: March 21, 2016
    Publication date: September 22, 2016
    Applicant: DSP Group Ltd.
    Inventors: Sergey Anderson, Udi Suissa
  • Patent number: 9413303
    Abstract: A novel and useful radio frequency (RF) front end module (FEM) circuit that provides high linearity and power efficiency and meets the requirements of modern wireless communication standards such as 802.11 WLAN, 3G and 4G cellular standards, Bluetooth, ZigBee, etc. The configuration of the FEM circuit permits the use of common, relatively low cost semiconductor fabrication techniques such as standard CMOS processes. The FEM circuit includes a power amplifier made up of one or more sub-amplifiers having high and low power circuits and whose outputs are combined to yield the total desired power gain. An integrated multi-tap transformer having primary and secondary windings arranged in a novel configuration provide efficient power combining and transfer to the antenna of the power generated by the individual sub-amplifiers.
    Type: Grant
    Filed: September 23, 2013
    Date of Patent: August 9, 2016
    Assignee: DSP GROUP, LTD.
    Inventors: Alexander Mostov, Sergey Anderson, Udi Suissa
  • Publication number: 20160149543
    Abstract: A novel and useful radio frequency (RF) front end module (FEM) circuit that provides high linearity and power efficiency and meets the requirements of modern wireless communication standards such as 802.11 WLAN, 3G and 4G cellular standards, Bluetooth, ZigBee, etc. The configuration of the FEM circuit permits the use of common, relatively low cost semiconductor fabrication techniques such as standard CMOS processes. The FEM circuit includes a power amplifier made up of one or more sub-amplifiers having high and low power circuits and whose outputs are combined to yield the total desired power gain. An integrated multi-tap transformer having primary and secondary windings arranged in a novel configuration provide efficient power combining and transfer to the antenna of the power generated by the individual sub-amplifiers.
    Type: Application
    Filed: November 26, 2015
    Publication date: May 26, 2016
    Inventors: Sergey Anderson, Alexander Mostov, Eli Schwartz, Ron Pongratz
  • Publication number: 20150357978
    Abstract: A novel and useful radio frequency (RF) front end module (FEM) circuit that provides high linearity and power efficiency and meets the requirements of modern wireless communication standards such as 802.11 WLAN, 3G and 4G cellular standards, Bluetooth, ZigBee, etc. The configuration of the FEM circuit permits the use of common, relatively low cost semiconductor fabrication techniques such as standard CMOS processes. The FEM circuit includes a power amplifier made up of one or more sub-amplifiers having high and low power circuits and whose outputs are combined to yield the total desired power gain. An integrated multi-tap transformer having primary and secondary windings arranged in a novel configuration provide efficient power combining and transfer to the antenna of the power generated by the individual sub-amplifiers.
    Type: Application
    Filed: June 25, 2015
    Publication date: December 10, 2015
    Inventors: Sergey Anderson, Alexander Mostov
  • Patent number: 9208943
    Abstract: A novel and useful radio frequency (RF) front end module (FEM) circuit that provides high linearity and power efficiency and meets the requirements of modern wireless communication standards such as 802.11 WLAN, 3G and 4G cellular standards, BLUETOOTH®, ZIGBEE®, etc. The configuration of the FEM circuit permits the use of common, relatively low cost semiconductor fabrication techniques such as standard CMOS processes. The FEM circuit includes a power amplifier made up of one or more sub-amplifiers having high and low power circuits and whose outputs are combined to yield the total desired power gain. An integrated multi-tap transformer having primary and secondary windings arranged in a novel configuration provide efficient power combining and transfer to the antenna of the power generated by the individual sub-amplifiers.
    Type: Grant
    Filed: September 23, 2013
    Date of Patent: December 8, 2015
    Assignee: DSP GROUP LTD.
    Inventors: Sergey Anderson, Alexander Mostov, Eli Schwartz, Ron Pongratz
  • Publication number: 20150333791
    Abstract: The present invention is a novel and useful RF transformer based transmit/receive (TX/RX) integrated RF switch. In one embodiment of the invention, the TX/RX RF switch circuit is based on the use of an RF transformer which functions as (1) the PA output transformer during TX mode and (2) as a series inductance in an LNA matching network during receive mode. Thus, the RF transformer plays a dual function or role. Antenna diversity is achieved by having multiple antennas each having an associated antenna switch connected to the output transformer. The TX/RX switch of the invention reduces the number of switches required for antenna diversity to a minimum and minimizes RF losses in the system. The TX/RX switch is suitable for use with modern wireless communication standards such as DECT, 802.11 WLAN, Bluetooth, ZigBee, etc. The configuration of the TX/RX circuit permits the use of common, relatively low cost semiconductor fabrication techniques such as standard CMOS processes.
    Type: Application
    Filed: May 14, 2014
    Publication date: November 19, 2015
    Inventors: Sergey Anderson, Sharon Betzalel
  • Publication number: 20150194942
    Abstract: A novel and useful radio frequency (RF) front end module (FEM) circuit that provides high linearity and power efficiency and meets the requirements of modern wireless communication standards such as 802.11 WLAN, 3G and 4G cellular standards, Bluetooth, ZigBee, etc. The configuration of the FEM circuit permits the use of common, relatively low cost semiconductor fabrication techniques such as standard CMOS processes. The FEM circuit includes a power amplifier made up of one or more sub-amplifiers having high and low power circuits and whose outputs are combined to yield the total desired power gain. An integrated multi-tap transformer having primary and secondary windings arranged in a novel configuration provide efficient power combining and transfer to the antenna of the power generated by the individual sub-amplifiers.
    Type: Application
    Filed: January 22, 2015
    Publication date: July 9, 2015
    Inventors: Sergey Anderson, Alexander Mostov, Eli Schwartz, Ron Pongratz, Ilya Sima
  • Patent number: 9070506
    Abstract: A novel and useful radio frequency (RF) front end module (FEM) circuit that provides high linearity and power efficiency and meets the requirements of modern wireless communication standards such as 802.11 WLAN, 3G and 4G cellular standards, Bluetooth, ZigBee, etc. The configuration of the FEM circuit permits the use of common, relatively low cost semiconductor fabrication techniques such as standard CMOS processes. The FEM circuit includes a power amplifier made up of one or more sub-amplifiers having high and low power circuits and whose outputs are combined to yield the total desired power gain. An integrated multi-tap transformer having primary and secondary windings arranged in a novel configuration provide efficient power combining and transfer to the antenna of the power generated by the individual sub-amplifiers.
    Type: Grant
    Filed: September 23, 2013
    Date of Patent: June 30, 2015
    Assignee: DSP GROUP, LTD.
    Inventors: Sergey Anderson, Alexander Mostov