Patents by Inventor Sergey G. BELOSTOTSKIY
Sergey G. BELOSTOTSKIY has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).
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Patent number: 11410860Abstract: Methods and process chambers for etching of low-k and other dielectric films are described. For example, a method includes modifying portions of the low-k dielectric layer with a plasma process. The modified portions of the low-k dielectric layer are etched selectively over a mask layer and unmodified portions of the low-k dielectric layer. Etch chambers having multiple chamber regions for alternately generating distinct plasmas are described. In embodiments, a first charge coupled plasma source is provided to generate an ion flux to a workpiece in one operational mode, while a secondary plasma source is provided to provide reactive species flux without significant ion flux to the workpiece in another operational mode. A controller operates to cycle the operational modes repeatedly over time to remove a desired cumulative amount of the dielectric material.Type: GrantFiled: January 8, 2021Date of Patent: August 9, 2022Assignee: Applied Materials, Inc.Inventors: Dmitry Lubomirsky, Srinivas Nemani, Ellie Yieh, Sergey G. Belostotskiy
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Patent number: 11302519Abstract: Methods of patterning low-k dielectric films are described. In an example, a method of patterning a low-k dielectric film involves forming and patterning a mask layer above a low-k dielectric layer, the low-k dielectric layer disposed above a substrate. The method also involves modifying exposed portions of the low-k dielectric layer with a nitrogen-free plasma process. The method also involves removing, with a remote plasma process, the modified portions of the low-k dielectric layer selective to the mask layer and unmodified portions of the low-k dielectric layer.Type: GrantFiled: September 9, 2015Date of Patent: April 12, 2022Assignee: Applied Materials, Inc.Inventors: Srinivas D. Nemani, Jeremiah T. Pender, Qingjun Zhou, Dmitry Lubomirsky, Sergey G. Belostotskiy
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Publication number: 20210134618Abstract: Methods and process chambers for etching of low-k and other dielectric films are described. For example, a method includes modifying portions of the low-k dielectric layer with a plasma process. The modified portions of the low-k dielectric layer are etched selectively over a mask layer and unmodified portions of the low-k dielectric layer. Etch chambers having multiple chamber regions for alternately generating distinct plasmas are described. In embodiments, a first charge coupled plasma source is provided to generate an ion flux to a workpiece in one operational mode, while a secondary plasma source is provided to provide reactive species flux without significant ion flux to the workpiece in another operational mode. A controller operates to cycle the operational modes repeatedly over time to remove a desired cumulative amount of the dielectric material.Type: ApplicationFiled: January 8, 2021Publication date: May 6, 2021Inventors: Dmitry Lubomirsky, Srinivas Nemani, Ellie Yieh, Sergey G. Belostotskiy
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Patent number: 10923367Abstract: Methods and process chambers for etching of low-k and other dielectric films are described. For example, a method includes modifying portions of the low-k dielectric layer with a plasma process. The modified portions of the low-k dielectric layer are etched selectively over a mask layer and unmodified portions of the low-k dielectric layer. Etch chambers having multiple chamber regions for alternately generating distinct plasmas are described. In embodiments, a first charge coupled plasma source is provided to generate an ion flux to a workpiece in one operational mode, while a secondary plasma source is provided to provide reactive species flux without significant ion flux to the workpiece in another operational mode. A controller operates to cycle the operational modes repeatedly over time to remove a desired cumulative amount of the dielectric material.Type: GrantFiled: August 21, 2018Date of Patent: February 16, 2021Assignee: Applied Materials, Inc.Inventors: Dmitry Lubomirsky, Srinivas Nemani, Ellie Yieh, Sergey G. Belostotskiy
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Publication number: 20180358244Abstract: Methods and process chambers for etching of low-k and other dielectric films are described. For example, a method includes modifying portions of the low-k dielectric layer with a plasma process. The modified portions of the low-k dielectric layer are etched selectively over a mask layer and unmodified portions of the low-k dielectric layer. Etch chambers having multiple chamber regions for alternately generating distinct plasmas are described. In embodiments, a first charge coupled plasma source is provided to generate an ion flux to a workpiece in one operational mode, while a secondary plasma source is provided to provide reactive species flux without significant ion flux to the workpiece in another operational mode. A controller operates to cycle the operational modes repeatedly over time to remove a desired cumulative amount of the dielectric material.Type: ApplicationFiled: August 21, 2018Publication date: December 13, 2018Inventors: Dmitry LUBOMIRSKY, Srinivas NEMANI, Ellie YIEH, Sergey G. BELOSTOTSKIY
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Patent number: 10096496Abstract: Methods and process chambers for etching of low-k and other dielectric films are described. For example, a method includes modifying portions of the low-k dielectric layer with a plasma process. The modified portions of the low-k dielectric layer are etched selectively over a mask layer and unmodified portions of the low-k dielectric layer. Etch chambers having multiple chamber regions for alternately generating distinct plasmas are described. In embodiments, a first charge coupled plasma source is provided to generate an ion flux to a workpiece in one operational mode, while a secondary plasma source is provided to provide reactive species flux without significant ion flux to the workpiece in another operational mode. A controller operates to cycle the operational modes repeatedly over time to remove a desired cumulative amount of the dielectric material.Type: GrantFiled: April 24, 2017Date of Patent: October 9, 2018Assignee: Applied Materials, Inc.Inventors: Dmitry Lubomirsky, Srinivas Nemani, Ellie Yieh, Sergey G. Belostotskiy
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Publication number: 20170229325Abstract: Methods and process chambers for etching of low-k and other dielectric films are described. For example, a method includes modifying portions of the low-k dielectric layer with a plasma process. The modified portions of the low-k dielectric layer are etched selectively over a mask layer and unmodified portions of the low-k dielectric layer. Etch chambers having multiple chamber regions for alternately generating distinct plasmas are described. In embodiments, a first charge coupled plasma source is provided to generate an ion flux to a workpiece in one operational mode, while a secondary plasma source is provided to provide reactive species flux without significant ion flux to the workpiece in another operational mode. A controller operates to cycle the operational modes repeatedly over time to remove a desired cumulative amount of the dielectric material.Type: ApplicationFiled: April 24, 2017Publication date: August 10, 2017Inventors: Dmitry LUBOMIRSKY, Srinivas NEMANI, Ellie YIEH, Sergey G. BELOSTOTSKIY
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Patent number: 9666414Abstract: Methods and process chambers for etching of low-k and other dielectric films are described. For example, a method includes modifying portions of the low-k dielectric layer with a plasma process. The modified portions of the low-k dielectric layer are etched selectively over a mask layer and unmodified portions of the low-k dielectric layer. Etch chambers having multiple chamber regions for alternately generating distinct plasmas are described. In embodiments, a first charge coupled plasma source is provided to generate an ion flux to a workpiece in one operational mode, while a secondary plasma source is provided to provide reactive species flux without significant ion flux to the workpiece in another operational mode. A controller operates to cycle the operational modes repeatedly over time to remove a desired cumulative amount of the dielectric material.Type: GrantFiled: October 12, 2012Date of Patent: May 30, 2017Assignee: APPLIED MATERIALS, INC.Inventors: Dmitry Lubomirsky, Srinivas Nemani, Ellie Yieh, Sergey G. Belostotskiy
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Patent number: 9601301Abstract: A direct (DC) voltage is applied to an electrode at a voltage value to clamp a workpiece to an electrostatic chuck in a processing chamber. The electrode is embedded into the electrostatic chuck. An electrostatic chuck current through the electrode at the DC voltage is measured. A DC self bias induced on the workpiece by a plasma is determined based on the electrostatic chuck current and the applied voltage.Type: GrantFiled: May 20, 2014Date of Patent: March 21, 2017Assignee: APPLIED MATERIALS, INC.Inventors: Sergey G. Belostotskiy, Chinh Dinh, Andrew Nguyen, Michael G. Chafin
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Patent number: 9368370Abstract: A method for etching a dielectric layer disposed on a substrate is provided. The method includes de-chucking the substrate from an electrostatic chuck in an etching processing chamber, and cyclically etching the dielectric layer while the substrate is de-chucked from the electrostatic chuck. The cyclical etching includes remotely generating a plasma in an etching gas mixture supplied into the etching processing chamber to etch the dielectric layer disposed on the substrate at a first temperature. Etching the dielectric layer generates etch byproducts. The cyclical etching also includes vertically moving the substrate towards a gas distribution plate in the etching processing chamber, and flowing a sublimation gas from the gas distribution plate towards the substrate to sublimate the etch byproducts. The sublimation is performed at a second temperature, wherein the second temperature is greater than the first temperature.Type: GrantFiled: March 9, 2015Date of Patent: June 14, 2016Assignee: APPLIED MATERIALS, INC.Inventors: Sergey G. Belostotskiy, Chinh Dinh, Qingjun Zhou, Srinivas D. Nemani, Andrew Nguyen
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Publication number: 20150380215Abstract: Methods of patterning low-k dielectric films are described. In an example, a method of patterning a low-k dielectric film involves forming and patterning a mask layer above a low-k dielectric layer, the low-k dielectric layer disposed above a substrate. The method also involves modifying exposed portions of the low-k dielectric layer with a nitrogen-free plasma process. The method also involves removing, with a remote plasma process, the modified portions of the low-k dielectric layer selective to the mask layer and unmodified portions of the low-k dielectric layer.Type: ApplicationFiled: September 9, 2015Publication date: December 31, 2015Inventors: Srinivas D. Nemani, Jeremiah T. Pender, Qingjun Zhou, Dmitry Lubomirsky, Sergey G. Belostotskiy
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Patent number: 9165783Abstract: Methods of patterning low-k dielectric films are described. In an example, a method of patterning a low-k dielectric film involves forming and patterning a mask layer above a low-k dielectric layer, the low-k dielectric layer disposed above a substrate. The method also involves modifying exposed portions of the low-k dielectric layer with a nitrogen-free plasma process. The method also involves removing, with a remote plasma process, the modified portions of the low-k dielectric layer selective to the mask layer and unmodified portions of the low-k dielectric layer.Type: GrantFiled: October 22, 2013Date of Patent: October 20, 2015Assignee: Applied Materials, Inc.Inventors: Srinivas D. Nemani, Jeremiah T. Pender, Qingjun Zhou, Dmitry Lubomirsky, Sergey G. Belostotskiy
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Publication number: 20150262834Abstract: A method for etching a dielectric layer disposed on a substrate is provided. The method includes de-chucking the substrate from an electrostatic chuck in an etching processing chamber, and cyclically etching the dielectric layer while the substrate is de-chucked from the electrostatic chuck. The cyclical etching includes remotely generating a plasma in an etching gas mixture supplied into the etching processing chamber to etch the dielectric layer disposed on the substrate at a first temperature. Etching the dielectric layer generates etch byproducts. The cyclical etching also includes vertically moving the substrate towards a gas distribution plate in the etching processing chamber, and flowing a sublimation gas from the gas distribution plate towards the substrate to sublimate the etch byproducts. The sublimation is performed at a second temperature, wherein the second temperature is greater than the first temperature.Type: ApplicationFiled: March 9, 2015Publication date: September 17, 2015Inventors: Sergey G. BELOSTOTSKIY, Chinh DINH, Qingjun ZHOU, Srinivas D. NEMANI, Andrew NGUYEN
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Patent number: 9093389Abstract: Methods of patterning silicon nitride dielectric films are described. For example, a method of isotropically etching a dielectric film involves partially modifying exposed regions of a silicon nitride layer with an oxygen-based plasma process to provide a modified portion and an unmodified portion of the silicon nitride layer. The method also involves removing, selective to the unmodified portion, the modified portion of the silicon nitride layer with a second plasma process.Type: GrantFiled: January 13, 2014Date of Patent: July 28, 2015Assignee: Applied Materials, Inc.Inventors: Srinivas D. Nemani, Jeremiah T. Pender, Qingjun Zhou, Dmitry Lubomirsky, Sergey G. Belostotskiy
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Publication number: 20150064921Abstract: Methods for etching a material layer disposed on the substrate using a low temperature etching process along with a subsequent low temperature plasma annealing process are provided. In one embodiment, a method for etching a material layer disposed on a substrate includes transferring a substrate having a material layer disposed thereon into an etching processing chamber, supplying an etching gas mixture into the processing chamber, remotely generating a plasma in the etching gas mixture to etch the material layer disposed on the substrate, and plasma annealing the material layer at a substrate temperature less than 100 degrees Celsius.Type: ApplicationFiled: August 30, 2013Publication date: March 5, 2015Inventors: Srinivas D. NEMANI, Sean S. KANG, Jeremiah T. P. PENDER, Chia-Ling KAO, Sergey G. BELOSTOTSKIY, Lina ZHU
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Publication number: 20150040829Abstract: Embodiments of the present invention relate to hollow cathode plasma sources with improved uniformity. One embodiment of the present invention provides a hollow cathode assembly having a conductive rod disposed in an inner volume along a central axis of a hollow cathode. The conductive rod being closest to the ground electrode and having the sharpest features of the hollow cathode becomes the point of plasma ignition. Since the conductive rod is positioned along the central axis, the plasma is ignited at symmetrically about the central axis thus improving plasma uniformity and reducing skews.Type: ApplicationFiled: September 13, 2013Publication date: February 12, 2015Applicant: APPLIED MATERIALS, INC.Inventors: Kartik RAMASWAMY, Andrew NGUYEN, Sergey G. BELOSTOTSKIY
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Patent number: 8932959Abstract: Etching of a thin film stack including a lower thin film layer containing an advanced memory material is carried out in an inductively coupled plasma reactor having a dielectric RF window without exposing the lower thin film layer, and then the etch process is completed in a toroidal source plasma reactor.Type: GrantFiled: March 6, 2013Date of Patent: January 13, 2015Assignee: Applied Materials, Inc.Inventors: Srinivas D. Nemani, Mang-mang Ling, Jeremiah T. Pender, Kartik Ramaswamy, Andrew Nguyen, Sergey G. Belostotskiy, Sumit Agarwal
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Publication number: 20140375299Abstract: A direct (DC) voltage is applied to an electrode at a voltage value to clamp a workpiece to an electrostatic chuck in a processing chamber. The electrode is embedded into the electrostatic chuck. An electrostatic chuck current through the electrode at the DC voltage is measured. A DC self bias induced on the workpiece by a plasma is determined based on the electrostatic chuck current and the applied voltage.Type: ApplicationFiled: May 20, 2014Publication date: December 25, 2014Inventors: Sergey G. Belostotskiy, Chinh Dinh, Andrew Nguyen, Michael G. Chafin
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Publication number: 20140342569Abstract: A method of selectively dry etching exposed substrate material on patterned heterogeneous structures is described. The method includes a plasma process prior to a remote plasma etch. The plasma process may use a biased plasma to treat an untreated substrate portion in a preferred direction to form a treated substrate portion. Subsequently, a remote plasma is formed using a fluorine-containing precursor to etch the treated substrate portion using the plasma effluents. By implementing biased plasma processes, the normally isotropic etch may be transformed into a directional (anisotropic) etch despite the remote nature of the plasma excitation during the etch process.Type: ApplicationFiled: August 19, 2013Publication date: November 20, 2014Applicant: Applied Materials, Inc.Inventors: Lina Zhu, Sean S. Kang, Srinivas D. Nemani, Sergey G. Belostotskiy, Jeremiah T. Pender
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Publication number: 20140311581Abstract: An exemplary semiconductor processing system may include a processing chamber and a first pressure regulating device coupled with the processing chamber. A second pressure regulating device may also be coupled with the processing chamber separate from the first pressure regulating device. A first pump may be fluidly coupled with the first pressure regulating device and fluidly isolated from the second pressure regulating device. A second fluid pump may be fluidly coupled with the second pressure regulating device.Type: ApplicationFiled: June 17, 2013Publication date: October 23, 2014Applicant: Applied Materials, Inc.Inventors: Sergey G. Belostotskiy, Andrew Nguyen, Jonathan Dinh, Ying-Sheng Lin