Patents by Inventor Sergey I. Maximenko

Sergey I. Maximenko has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Etching agent for type II InAs/GaInSb superlattice epitaxial materials
    Patent number: 8685273
    Abstract: This disclosure involves a formula, mixing procedure, etching technique and application of an etchant for revealing defects in T2SL's grown lattice matched to (100) GaSb. The etching agent comprises a (2.5:4.5:16.5:280) solution by volume or (1%:2%:9%:88%) by weight, of HF:H2O2:H2SO4:H2O. The etchant is made by mixing (49%) hydrofluoric aqueous solution with (30%) water-based peroxide, followed by sulfuric acid, and diluted with de-ionized H2O (DI-water).
    Type: Grant
    Filed: November 6, 2012
    Date of Patent: April 1, 2014
    Assignee: The United States of America, as represented by the Secretary of the Navy
    Inventors: Edward H Aifer, Sergey I Maximenko
  • Etching Agent for Type II InAs/GaInSb Superlattice Epitaxial Materials
    Publication number: 20130122715
    Abstract: This disclosure involves a formula, mixing procedure, etching technique and application of an etchant for revealing defects in T2SL's grown lattice matched to (100) GaSb. The etching agent comprises a (2.5:4.5:16.5:280) solution by volume or (1%:2%:9%:88%) by weight, of HF:H2O2:H2SO4:H2O. The etchant is made by mixing (49%) hydrofluoric aqueous solution with (30%) water-based peroxide, followed by sulfuric acid, and diluted with de-ionized H2O (DI-water).
    Type: Application
    Filed: November 6, 2012
    Publication date: May 16, 2013
    Inventors: Edward H Aifer, Sergey I. Maximenko