Abstract: Deposited layers are advantageously obtained by utilizing a specific hydride vapor phase epitaxy deposition procedure. In this procedure, a vertical growth cell structure with extended diffusion layer, a homogenising diaphragm, sidewall purging gases, anal independent gas and substrate heaters is used for the deposition of III-V and VI compound semiconductors. This gas flow is uniformly mixed through the extended diffusion layer and directed so that it contacts the full surface of the substrate to produce high quality and uniform films. Exemplary of such gas flow configurations are the positioning of a substrate at a distance from the gas outlets to allow the extended diffusion and a diaphragm placed in a short distance above the substrate to minimize the impact of the convection effect and to improve the uniformity. This symmetrical configuration allows easy scale up from a single wafer to multi-wafer system.

Abstract: Deposited layers are advantageously obtained by utilizing a specific hydride vapour phase epitaxy deposition procedure. In this procedure, a vertical growth cell structure with extended diffusion layer, a homogenising diaphragm, sidewall purging gases, anal independent gas and substrate heaters is used for the deposition of III-V and VI compound semiconductors. This gas flow is uniformly mixed through the extended diffusion layer and directed so that it contacts the full surface of the substrate to produce high quality and uniform films. Exemplary of such gas flow configurations are the positioning of a substrate at a distance from the gas outlets to allow the extended diffusion and a diaphragm placed in a short distance above the substrate to minimise the impact of the convection effect and to improve the uniformity. This symmetrical configuration allows easy scale up from a single wafer to multi-wafer system.

Abstract: A chemical vapor deposition reactor for depositing a thin film on at least a substrate through a reaction between a vertical input reagent gas flow and the at least a substrate is provided, in which a vertical output reagent gas flow is produced after the reaction. The reactor includes a vertical tube, at least a reaction chamber located inside the vertical tube, an input flow baffle located on the at least a reaction chamber, and at least a gas exit installed on the at least a reaction chamber for exhausting the vertical input reagent gas flow and the vertical output reagent gas flow. In addition, the substrate is located at the bottom of the at least a reaction chamber. The provided reactors allow the achievement of more efficient heating process, lower gas consumption and higher growth uniformity than the conventional reactors.

Abstract: A chemical vapor deposition reactor for depositing a thin film on at least a substrate through a reaction between a vertical input reagent gas flow and the at least a substrate is provided, in which a vertical output reagent gas flow is produced after the reaction. The reactor includes a vertical tube, at least a reaction chamber located inside the vertical tube, an input flow baffle located on the at least a reaction chamber, and at least a gas exit installed on the at least a reaction chamber for exhausting the vertical input reagent gas flow and the vertical output reagent gas flow. In addition, the substrate is located at the bottom of the at least a reaction chamber. The provided reactors allow the achievement of more efficient heating process, lower gas consumption and higher growth uniformity than the conventional reactors.