Patents by Inventor Sergey Karpov

Sergey Karpov has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Method of Acoustic Wave Generation
    Publication number: 20090022340
    Abstract: A method of converting an audio signal into vibratory modulation of a fluid includes converting a series of pulses representative of the audio signal into a plurality of signals having an intermediate peak-to-peak voltage; summing said signals having said intermediate voltage to provide a driver signal having a high peak-to-peak voltage; supplying said driver signal to an electrostatic fluid accelerator; and generating a corona discharge inducing said vibratory modulation of said fluid.
    Type: Application
    Filed: April 25, 2007
    Publication date: January 22, 2009
    Applicant: Kronos Advanced Technologies, Inc.
    Inventors: Igor A. Krichtafovitch, Oharah L. Jacob, Vladislav A. Korolyov, Nels E. Jewell-Larsen, Sergey Karpov
  • Method for fabricating a P-N heterojunction device utilizing HVPE grown III-V compound layers and resultant device
    Patent number: 6890809
    Abstract: A method for fabricating a p-n heterojunction device is provided, the device being preferably comprised of an n-type GaN layer co-doped with silicon and zinc and a p-type AlGaN layer. The device may also include a p-type GaN capping layer. The device can be grown on any of a variety of different base substrates, the base substrate comprised of either a single substrate or a single substrate and an intermediary layer. The device can be grown directly onto the surface of the substrate without the inclusion of a low temperature buffer layer.
    Type: Grant
    Filed: August 9, 2002
    Date of Patent: May 10, 2005
    Assignee: Technologies and Deviles International, Inc.
    Inventors: Sergey Karpov, Alexander Usikov, Heikki I. Helava, Denis Tsvetkov, Vladimir A. Dmitriev
  • Method for fabricating a P-N heterojunction device utilizing HVPE grown III-V compound layers and resultant device
    Publication number: 20030049898
    Abstract: A method for fabricating a p-n heterojunction device is provided, the device being preferably comprised of an n-type GaN layer co-doped with silicon and zinc and a p-type AlGaN layer. The device may also include a p-type GaN capping layer. The device can be grown on any of a variety of different base substrates, the base substrate comprised of either a single substrate or a single substrate and an intermediary layer. The device can be grown directly onto the surface of the substrate without the inclusion of a low temperature buffer layer.
    Type: Application
    Filed: August 9, 2002
    Publication date: March 13, 2003
    Inventors: Sergey Karpov, Alexander Usikov, Heikki I. Helava, Denis Tsvetkov, Vladimir A. Dmitriev