Abstract: A thermal energy measurement system is disclosed for use as a calorimeter capable of providing sample thermal energy measurements in selectable modes including isothermal and/or adiabatic modes. In some embodiments, the thermal energy system further comprises a closed-loop servo controller. In some embodiments, the thermal energy measurement system is capable of providing thermal energy measurements in semi-adiabatic and/or custom programmed modes. In some embodiments, the servo controller may be implemented as a feedback circuit whose process variable is either heat flow, sample temperature, a combination thereof, or a preprogrammed time dependence of the heat flow and/or sample temperature. The output of the servo controller may be used to drive a temperature control device such as but not limited to a thermoelectric module (TEM). Methods of thermal energy measurement are also disclosed.

Abstract: Embodiments of the invention are directed to methods and apparatus for infrared imagers including fast electrostatic shutters and offset compensation. Fast electrostatic shutters are used for video image correction including image offset compensation where temporal noise and scene nonuniformity are corrected. This method provides a shutterless experience for the user because the image will be blocked for only one frame at a time. A method of manufacturing an electrostatic infrared shutter includes a conductive infrared-transparent substrate, covering it with an insulating layer, depositing adhesive and a thin film stack, delineating a working area, providing contacts, heat-treating the assembly, and making the polymer non-reflective in the infrared.

Abstract: Embodiments of the invention are directed to methods and apparatus for infrared imagers including fast electrostatic shutters and offset compensation. Fast electrostatic shutters are used for video image correction including image offset compensation where temporal noise and scene nonuniformity are corrected. This method provides a shutterless experience for the user because the image will be blocked for only one frame at a time. A method of manufacturing an electrostatic infrared shutter includes a conductive infrared-transparent substrate, covering it with an insulating layer, depositing adhesive and a thin film stack, delineating a working area, providing contacts, heat-treating the assembly, and making the polymer non-reflective in the infrared.

Abstract: Embodiments of the invention are directed to methods and apparatus for infrared imagers including fast electrostatic shutters and offset compensation. Fast electrostatic shutters are used for video image correction including image offset compensation where temporal noise and scene nonuniformity are corrected. This method provides a shutterless experience for the user because the image will be blocked for only one frame at a time. A method of manufacturing an electrostatic infrared shutter includes a conductive infrared-transparent substrate, covering it with an insulating layer, depositing adhesive and a thin film stack, delineating a working area, providing contacts, heat-treating the assembly, and making the polymer non-reflective in the infrared.

Abstract: A non-uniformity correction (NUC) process for imaging engines is augmented with real-time pixel substitution capability. This feature checks for pixels that have significantly degraded from their factory performance. Degraded pixels found are then substituted in real time. This process eliminates distractions to the camera system operator and prevents these degraded pixels from degrading the subjective image quality.

Abstract: An array of sensitive pixel elements is configured to generate signals representative of sensed light that is associated with writing being done by a user, and an optical system concentrates light from a light source across a section of the array of sensitive pixel elements, the signals being useful to compute a subpixel measurement of a position of the light source.

Abstract: Embodiments of the invention are directed to methods and apparatus for infrared imagers including fast electrostatic shutters and offset compensation. Fast electrostatic shutters are used for video image correction including image offset compensation where temporal noise and scene nonuniformity are corrected. This method provides a shutterless experience for the user because the image will be blocked for only one frame at a time. A method of manufacturing an electrostatic infrared shutter includes a conductive infrared-transparent substrate, covering it with an insulating layer, depositing adhesive and a thin film stack, delineating a working area, providing contacts, heat-treating the assembly, and making the polymer non-reflective in the infrared.

Abstract: A non-uniformity correction (NUC) process for imaging engines is augmented with real-time pixel substitution capability. This feature checks for pixels that have significantly degraded from their factory performance. Degraded pixels found are then substituted in real time. This process eliminates distractions to the camera system operator and prevents these degraded pixels from degrading the subjective image quality.

Abstract: A display is projected, information representing an image of the projected display and at least a portion of a pointing device in a vicinity of the projected display is optically captured, and the display is updated based on the captured image information.

Abstract: Motion of a writing instrument is tracked from sensors located in the vicinity. The signals generated from the sensors are processed and used in a wide variety of ways.

Abstract: An array of sensitive pixel elements is configured to generate signals representative of sensed light that is associated with writing being done by a user, and an optical system concentrates light from a light source across a section of the array of sensitive pixel elements, the signals being useful to compute a subpixel measurement of a position of the light source.

Abstract: Motion of a writing instrument is tracked from sensors located in the vicinity. The signals generated from the sensors are processed and used in a wide variety of ways.

Abstract: Motion of a writing instrument is tracked from sensors located in the vicinity. The signals generated from the sensors are processed and used in a wide variety of ways.

Abstract: Motion of a writing instrument is tracked from sensors located in the vicinity. The signals generated from the sensors are processed and used in a wide variety of ways.

Abstract: A method and apparatus are provided for determining the doping concentration profile of a specimen of semiconductor material. The apparatus includes a sensor assembly having a sensor tip which is mounted on an air bearing assembly. The air bearing assembly is suspended from a housing by a pair of bellows. In use, air is supplied to the air bearing assembly through the bellows causing the bellows to expand, lowering the sensor tip until the air bearing action stops the expansion. In other implementations of the invention, photocurrent or photovoltage are not used and the doping concentration profile is determined using the total capacitance, the capacitance of air, the DC bias voltage and the area of the electrode spaced from the specimen information.

Abstract: A method and apparatus are provided for determining the doping concentration profile of a specimen of semiconductor material. The specimen is positioned between a pair of electrodes, the specimen being disposed on one of the electrodes and being spaced form the other electrode by a nonconductive medium. In one implementation of the invention the nonconductive medium is air. A region of the surface of the specimen is illuminated with a beam of light of wavelengths shorter than that corresponding to the energy gap of the semiconductor material and which is intensity modulated at a predetermined frequency. A variable DC bias voltage is applied between the pair of electrodes, the variable DC bias voltage varying between that corresponding to accumulation and that corresponding to deep depletion for the specimen. The intensity of the light beam is low enough and the speed at which the DC bias voltage is varied is fast enough such that no inversion layer is formed at the surface of the specimen.

Abstract: A method for determining the doping concentration profile of a specimen of semiconductor material. The specimen is positioned between a pair of electrodes, the specimen being disposed on one of the electrodes and being spaced from the other electrode by an air gap. A signal is provided corresponding to the total capacitance between the two electrodes. A region of the surface of the specimen is illuminated with a beam of light of wavelengths shorter than that corresponding to the energy gap of the semiconductor material and which is intensity modulated at a predetermined frequency. A variable DC bias voltage is applied between the pair of electrodes, the variable bias voltage varying between that corresponding to accumulation and that corresponding to deep depletion for the specimen. The intensity of the light beam is low enough and the speed at which the DC bias voltage is varied is fast enough such that no inversion layer is formed at the surface of the specimen.

Abstract: An infrared energy detection apparatus having a first array of infrared detectors adapted to detect infrared energy of a first wavelength and produce an electrical signal corresponding to such detected energy, and a second array of infrared detectors, positioned to intercept infrared energy passing through the first array, and adapted to detect energy of a second wavelength in such intercepted energy and produce an electrical signal corresponding to such detected energy. The first array of infrared detectors includes an array of detector devices formed along a lower portion thereof adapted to detect a portion of radiation impinging on the upper portion thereof and, electronic circuitry disposed between the upper and lower portions and connected to the detector devices for producing electrical signals representative of the detected energy having the first wavelength.