Abstract: A trench metal oxide semiconductor field-effect transistor with a gate oxide stack, and a method of making a trench metal oxide semiconductor field-effect transistor with a gate oxide stack. A first layer of gate oxide is deposited on a surface of the trench using an atomic layer deposition or molecular vapor deposition process. A second layer of gate oxide is deposited on the first layer using a plasma-enhanced chemical vapor deposition process. The first and second layers of gate oxide are thermally annealed in a non-oxidizing atmosphere with a forming gas. Prior to depositing the first layer, the surface of the trench may be etched, an initial layer of thermal oxide may be deposited, and the initial layer may be nitridized or thermally annealed. If the initial layer is deposited on the surface of the trench, then the first layer is deposited on the initial layer.

Abstract: A transistor comprising a silicon carbide drain contact formed at a first side of a silicon carbide substrate and a silicon carbide drift layer formed at a second side of the silicon carbide substrate. A well implant layer and a base layer formed within the silicon carbide drift layer. A source layer formed over the base layer. A trench formed through a portion of the source layer, through a portion of the base layer and partially into a portion of the well implant layer wherein only one wall of the trench is tapered. A gate formed within the trench.

Abstract: A method includes performing an ion beam implant in a semiconductor substrate to form an ion-induced damage layer having a damaged structure, wherein a portion of the substrate above the ion-induced damage layer defines a substrate film region, and a portion below the ion-induced damage layer defines a bulk substrate region. Semiconductor device components are formed on the substrate film region, wherein the substrate film region and semiconductor device components formed thereon define a substrate film-based semiconductor device structure. Vertical openings are formed through the substrate film-based semiconductor device structure and extending down to the ion-induced damage layer. An under-etch is performed through the openings to partially remove the ion-induced damage layer.

Abstract: A method comprises performing an ion beam implant in a semiconductor substrate to form an ion-induced damage layer at an implant depth in the semiconductor substrate, wherein a portion of the substrate above the ion-induced damage layer defines a substrate film region, a portion of the substrate below the ion-induced damage layer defines a bulk substrate region. Semiconductor device components are formed on the substrate film region, defining a substrate film-based semiconductor device structure. A stressed film is formed on the semiconductor device components, which introduces internal forces in the substrate film-based semiconductor device structure. The substrate film-based semiconductor device structure is separated from the bulk substrate region at the ion-induced damage layer, wherein the separation is facilitated by (a) the ion-induced damage layer and (b) the internal forces introduced by the stressed film. The separated substrate film-based semiconductor device structure may be mounted on a carrier.