Patents by Inventor Sergey Mikhrin
Sergey Mikhrin has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).
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Patent number: 9350138Abstract: A transversely-coupled distributed feedback laser diode, which can be processed without overgrowth, is disclosed. The laser is made from an epitaxial heterostructure including a core layer located between two cladding layers, a cap layer, and at least one Al-rich layer. The lateral waveguide is formed by selective oxidation of the Al-rich layer. A surface corrugated grating is formed above the waveguide. The heteroepitaxial structure is designed so that the core layer is placed in close proximity to the top of the laser structure to provide a required overlap between the light and the grating. In order to avoid inadmissible optical losses, there is no metallization above the waveguide. Instead, the metal contacts are offset at some distance, so that the current has to spread in the cap layer before vertical injection into the core layer.Type: GrantFiled: February 18, 2014Date of Patent: May 24, 2016Assignee: Innolume GmbHInventors: Alexey Gubenko, Daniil Livshits, Sergey Mikhrin, Igor Krestnikov
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Publication number: 20150280402Abstract: A transversely-coupled distributed feedback laser diode, which can be processed without overgrowth, is disclosed. The laser is made from an epitaxial heterostructure including a core layer located between two cladding layers, a cap layer, and at least one Al-rich layer. The lateral waveguide is formed by selective oxidation of the Al-rich layer. A surface corrugated grating is formed above the waveguide. The heteroepitaxial structure is designed so that the core layer is placed in close proximity to the top of the laser structure to provide a required overlap between the light and the grating. In order to avoid inadmissible optical losses, there is no metallization above the waveguide. Instead, the metal contacts are offset at some distance, so that the current has to spread in the cap layer before vertical injection into the core layer.Type: ApplicationFiled: February 18, 2014Publication date: October 1, 2015Applicant: Innolume GmbHInventors: Alexey Gubenko, Daniil Livshits, Sergey Mikhrin, Igor Krestnikov
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Patent number: 9036968Abstract: Waveguide designs and fabrication methods provide adiabatic waveguide eigen mode conversion and can be applied to monolithic vertical integration of active and passive elements in PICs. An advantage of the designs and methods is a simple fabrication procedure with only a single etching step in combination with subsequent well-controllable selective oxidation. As a result, improved manufacturability and reliability can be achieved.Type: GrantFiled: July 13, 2012Date of Patent: May 19, 2015Assignee: INNOLUME GMBHInventors: Alexey Gubenko, Igor Krestnikov, Sergey Mikhrin, Daniil Livshits, Greg Wojcik, Alexey Kovsh
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Patent number: 8411711Abstract: A semiconductor laser comprises an electrically isolated active section and at least one noise reducing section and operates on a ground state transition of a quantum dot array having inhomogeneous broadening greater than 10 nm. The laser preferably emits more than 10 optical modes such that a total relative intensity noise of each optical mode is less than 0.2% in the 0.001 GHz to 10 GHz range. The spectral power density is preferably higher than 2 mW/nm. An optical transmission system and a method of operating a quantum dot laser with low relative intensity noise of each optical mode are also disclosed.Type: GrantFiled: December 3, 2009Date of Patent: April 2, 2013Assignee: Innolume GmbHInventors: Alexey Gubenko, Alexey Kovsh, Greg Wojcik, Daniil Livshits, Igor Krestnikov, Sergey Mikhrin
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Publication number: 20130016942Abstract: Waveguide designs and fabrication methods provide adiabatic waveguide eigen mode conversion and can be applied to monolithic vertical integration of active and passive elements in PICs. An advantage of the designs and methods is a simple fabrication procedure with only a single etching step in combination with subsequent well-controllable selective oxidation. As a result, improved manufacturability and reliability can be achieved.Type: ApplicationFiled: July 13, 2012Publication date: January 17, 2013Applicant: INNOLUME GMBHInventors: Alexey Gubenko, Igor Krestnikov, Sergey Mikhrin, Daniil Livshits, Greg Wojcik, Alexey Kovsh
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Patent number: 8309461Abstract: An optoelectronic module includes a semiconductor structure with a substrate having a first side and a second side, a first layered structure deposited on the first side, and a second layered structure deposited on the second side. The optoelectronic module also includes driver circuitry fabricated of the first layered structure and a diode laser fabricated of the second layered structure. The driver circuitry produces a drive electrical signal supplied to the diode laser, and the diode laser produces an optical output in response to the drive electrical signal. In a preferred embodiment, the optoelectronic module also includes a temperature-sensitive element fabricated of the first or the second layered structure. The temperature-sensitive element produces a temperature dependent control signal related to the diode laser temperature.Type: GrantFiled: July 24, 2009Date of Patent: November 13, 2012Assignee: Innolume GmbHInventors: Igor Krestnikov, Juergen Kurb, Alexey Kovsh, Alexey Zhukov, Daniil Livshits, Sergey Mikhrin
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Patent number: 8148186Abstract: An efficient long-wavelength light-emitting diode has a resonant-cavity design. The light-emitting diode preferably has self-organized (In,Ga)As or (In,Ga)(As,N) quantum dots in the light-emitting active region, deposited on a GaAs substrate. The light-emitting diode is capable of emitting in a long-wavelength spectral range of preferably 1.15-1.35 ?m. The light-emitting diode also has a high efficiency of preferably at least 6 mW and more preferably at least 8 mW at an operating current of less than 100 mA and a low operating voltage of preferably less than 3V. In addition, the light-emitting diode preferably has an intensity of maxima, other than the main maximum of the emission spectrum, of less than 1% of an intensity of the main maximum. This combination of parameters makes such a device useful as an inexpensive optical source for various applications.Type: GrantFiled: November 18, 2009Date of Patent: April 3, 2012Assignee: Innolume GmbHInventors: Alexey Kovsh, Igor Krestnikov, Sergey Mikhrin, Daniil Livshits
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Patent number: 7835408Abstract: An optical transmission system includes a laser, a transmitter and a receiver. The laser is capable of operating on an inhomogeneously broadened optical transition of the active region of the laser. A spectral bandwidth of an output lasing spectrum of the laser is greater than 5 nm and a spectral power density of the laser is greater than 2 mW/nm such that an optical power of the laser is greater than 10 mW. The laser provides a plurality of optical signals at different wavelengths. The transmitter is capable of providing modulation to each lasing wavelength independently and the receiver is capable of providing detection to each lasing wavelength independently.Type: GrantFiled: November 12, 2007Date of Patent: November 16, 2010Assignee: Innolume GmbHInventors: Alexey Kovsh, Alexey Gubenko, Igor Krestnikov, Daniil Livshits, Sergey Mikhrin
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Publication number: 20100142973Abstract: A semiconductor laser comprises an electrically isolated active section and at least one noise reducing section and operates on a ground state transition of a quantum dot array having inhomogeneous broadening greater than 10 nm. The laser preferably emits more than 10 optical modes such that a total relative intensity noise of each optical mode is less than 0.2% in the 0.001 GHz to 10 GHz range. The spectral power density is preferably higher than 2 mW/nm. An optical transmission system and a method of operating a quantum dot laser with low relative intensity noise of each optical mode are also disclosed.Type: ApplicationFiled: December 3, 2009Publication date: June 10, 2010Applicant: INNOLUME GMBHInventors: Alexey Gubenko, Alexey Kovsh, Greg Wojcik, Daniil Livshits, Igor Krestnikov, Sergey Mikhrin
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Publication number: 20100068842Abstract: An efficient long-wavelength light-emitting diode has a resonant-cavity design. The light-emitting diode preferably has self-organized (In,Ga)As or (In,Ga)(As,N) quantum dots in the light-emitting active region, deposited on a GaAs substrate. The light-emitting diode is capable of emitting in a long-wavelength spectral range of preferably 1.15-1.35 ?m. The light-emitting diode also has a high efficiency of preferably at least 6 mW and more preferably at least 8 mW at an operating current of less than 100 mA and a low operating voltage of preferably less than 3V. In addition, the light-emitting diode preferably has an intensity of maxima, other than the main maximum of the emission spectrum, of less than 1% of an intensity of the main maximum. This combination of parameters makes such a device useful as an inexpensive optical source for various applications.Type: ApplicationFiled: November 18, 2009Publication date: March 18, 2010Applicant: Innolume GmbHInventors: Alexey Kovsh, Igor Krestnikov, Sergey Mikhrin, Daniil Livshits
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Patent number: 7642562Abstract: An efficient long-wavelength light-emitting diode has a resonant-cavity design. The light-emitting diode preferably has self-organized (In,Ga)As or (In,Ga)(As,N) quantum dots in the light-emitting active region, deposited on a GaAs substrate. The light-emitting diode is capable of emitting in a long-wavelength spectral range of preferably 1.15-1.35 ?m. The light-emitting diode also has a high efficiency of preferably at least 6 mW and more preferably at least 8 mW at an operating current of less than 100 mA and a low operating voltage of preferably less than 3V. In addition, the light-emitting diode preferably has an intensity of maxima, other than the main maximum of the emission spectrum, of less than 1% of an intensity of the main maximum. This combination of parameters makes such a device useful as an inexpensive optical source for various applications.Type: GrantFiled: September 28, 2007Date of Patent: January 5, 2010Assignee: Innolume GmbHInventors: Alexey Kovsh, Igor Krestnikov, Sergey Mikhrin, Daniil Livshits
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Publication number: 20090286343Abstract: An optoelectronic module includes a semiconductor structure with a substrate having a first side and a second side, a first layered structure deposited on the first side, and a second layered structure deposited on the second side. The optoelectronic module also includes driver circuitry fabricated of the first layered structure and a diode laser fabricated of the second layered structure. The driver circuitry produces a drive electrical signal supplied to the diode laser, and the diode laser produces an optical output in response to the drive electrical signal. In a preferred embodiment, the optoelectronic module also includes a temperature-sensitive element fabricated of the first or the second layered structure. The temperature-sensitive element produces a temperature dependent control signal related to the diode laser temperature.Type: ApplicationFiled: July 24, 2009Publication date: November 19, 2009Applicant: INNOLUME GMBHInventors: Igor Krestnikov, Jurgen Kurb, Alexey Kovsh, Alexey Zhukov, Daniil Livshits, Sergey Mikhrin
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Publication number: 20080180674Abstract: An optical transmission system includes a laser, a transmitter and a receiver. The laser is capable of operating on an inhomogeneously broadened optical transition of the active region of the laser. A spectral bandwidth of an output lasing spectrum of the laser is greater than 5 nm and a spectral power density of the laser is greater than 2 mW/nm such that an optical power of the laser is greater than 10 mW. The laser provides a plurality of optical signals at different wavelengths. The transmitter is capable of providing modulation to each lasing wavelength independently and the receiver is capable of providing detection to each lasing wavelength independently.Type: ApplicationFiled: November 12, 2007Publication date: July 31, 2008Applicant: Innolume GmbHInventors: Alexey Kovsh, Alexey Gubenko, Igor Krestnikov, Daniil Livshits, Sergey Mikhrin
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Publication number: 20080079016Abstract: An efficient long-wavelength light-emitting diode has a resonant-cavity design. The light-emitting diode preferably has self-organized (In,Ga)As or (In,Ga)(As,N) quantum dots in the light-emitting active region, deposited on a GaAs substrate. The light-emitting diode is capable of emitting in a long-wavelength spectral range of preferably 1.15-1.35 ?m. The light-emitting diode also has a high efficiency of preferably at least 6 mW and more preferably at least 8 mW at an operating current of less than 100 mA and a low operating voltage of preferably less than 3V. In addition, the light-emitting diode preferably has an intensity of maxima, other than the main maximum of the emission spectrum, of less than 1% of an intensity of the main maximum. This combination of parameters makes such a device useful as an inexpensive optical source for various applications.Type: ApplicationFiled: September 28, 2007Publication date: April 3, 2008Applicant: INNOLUME GMBHInventors: Alexey Kovsh, Igor Krestnikov, Sergey Mikhrin, Daniil Livshits
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Publication number: 20070248128Abstract: An optoelectronic module includes a semiconductor structure with a substrate having a first side and a second side, a first layered structure deposited on the first side, and a second layered structure deposited on the second side. The optoelectronic module also includes driver circuitry fabricated of the first layered structure and a diode laser fabricated of the second layered structure. The driver circuitry produces a drive electrical signal supplied to the diode laser, and the diode laser produces an optical output in response to the drive electrical signal. In a preferred embodiment, the optoelectronic module also includes a temperature-sensitive element fabricated of the first or the second layered structure. The temperature-sensitive element produces a temperature dependent control signal related to the diode laser temperature.Type: ApplicationFiled: April 25, 2006Publication date: October 25, 2007Applicant: NL Nanosemiconductor GmbHInventors: Igor Krestnikov, Jurgen Kurb, Alexey Kovsh, Alexey Zhukov, Daniil Livshits, Sergey Mikhrin