Patents by Inventor Sergey Pereverzev

Sergey Pereverzev has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Patent number: 11727296
    Abstract: Materials, products, methods of use and fabrication thereof are disclosed. The materials are particularly well suited for application in products such as superconducting devices and quantum computing, due to ability to avoid undesirable effects from inherent noise and decoherence. The materials are formed from select isotopes having zero nuclear spin into a single crystal-phase film or layer of thickness depending on the desired application of the resulting device. The film/layer may be suspended or disposed on a substrate. The isotopes may be enriched from naturally-occurring sources of isotopically mixed elemental material(s). The single crystal is preferably essentially devoid of structural defects such as grain boundaries, inclusions, impurities and lattice vacancies.
    Type: Grant
    Filed: April 9, 2019
    Date of Patent: August 15, 2023
    Assignee: Lawrence Livermore National Security, LLC
    Inventor: Sergey Pereverzev
  • Publication number: 20190236476
    Abstract: Materials, products, methods of use and fabrication thereof are disclosed. The materials are particularly well suited for application in products such as superconducting devices and quantum computing, due to ability to avoid undesirable effects from inherent noise and decoherence. The materials are formed from select isotopes having zero nuclear spin into a single crystal-phase film or layer of thickness depending on the desired application of the resulting device. The film/layer may be suspended or disposed on a substrate. The isotopes may be enriched from naturally-occurring sources of isotopically mixed elemental material(s). The single crystal is preferably essentially devoid of structural defects such as grain boundaries, inclusions, impurities and lattice vacancies.
    Type: Application
    Filed: April 9, 2019
    Publication date: August 1, 2019
    Inventor: Sergey Pereverzev
  • Patent number: 10318880
    Abstract: Materials, devices, methods of use and fabrication thereof are disclosed. The materials are particularly well suited for application in superconducting devices and quantum computing, due to ability to avoid undesirable effects from inherent noise and decoherence. The materials are formed from select isotopes having zero nuclear spin into a single crystal-phase film or layer of thickness depending on the desired application of the resulting device. The film/layer may be suspended or disposed on a substrate. The isotopes may be enriched from naturally-occurring sources of isotopically mixed elemental material(s). The single crystal is preferably devoid of structural defects such as grain boundaries, inclusions, impurities and lattice vacancies. Device configurations may be formed from the layer according to a predetermined pattern using lithographic and/or milling techniques.
    Type: Grant
    Filed: May 13, 2015
    Date of Patent: June 11, 2019
    Assignee: Lawrence Livermore National Security, LLC
    Inventor: Sergey Pereverzev
  • Publication number: 20160335559
    Abstract: Materials, devices, methods of use and fabrication thereof are disclosed. The materials are particularly well suited for application in superconducting devices and quantum computing, due to ability to avoid undesirable effects from inherent noise and decoherence. The materials are formed from select isotopes having zero nuclear spin into a single crystal-phase film or layer of thickness depending on the desired application of the resulting device. The film/layer may be suspended or disposed on a substrate. The isotopes may be enriched from naturally-occurring sources of isotopically mixed elemental material(s). The single crystal is preferably devoid of structural defects such as grain boundaries, inclusions, impurities and lattice vacancies. Device configurations may be formed from the layer according to a predetermined pattern using lithographic and/or milling techniques.
    Type: Application
    Filed: May 13, 2015
    Publication date: November 17, 2016
    Inventor: Sergey Pereverzev
  • Patent number: 9366574
    Abstract: A system designed to suppress thermal radiation background and to allow IR single-photon sensitive spectromicroscopy of small samples by using both absorption, reflection, and emission/luminescence measurements.
    Type: Grant
    Filed: March 9, 2015
    Date of Patent: June 14, 2016
    Assignee: Lawrence Livermore National Security, LLC
    Inventor: Sergey Pereverzev
  • Publication number: 20150253195
    Abstract: A system designed to suppress thermal radiation background and to allow IR single-photon sensitive spectromicroscopy of small samples by using both absorption, reflection, and emission/luminescence measurements.
    Type: Application
    Filed: March 9, 2015
    Publication date: September 10, 2015
    Inventor: Sergey Pereverzev