Abstract: Methods for displaying various user interfaces are disclosed for use in conjunction with image analysis software. User interfaces disclosed identify areas of interest on an analyzed image. The identified areas of interest are correlated with a confidence value displayed on the image as well, giving the user an idea of the likelihood that an identified area of interest corresponds to an actual area of interest on the image. The disclosed user interfaces may also provide a tool to users which allow the user to set and reset a threshold value or values used in analyzing the image. The displayed areas of interest may change due to the user setting a custom threshold value.

Abstract: Semiconductor structures and processes for fabricating semiconductor structures comprising hafnium oxide layers modified with lanthanum oxide or a lanthanide-series metal oxide are provided. A semiconductor structure in accordance with an embodiment of the invention comprises an amorphous layer of hafnium oxide overlying a substrate. A lanthanum-containing dopant or a lanthanide-series metal-containing dopant is comprised within the amorphous layer of hafnium oxide. The process comprises growing an amorphous layer of hafnium oxide overlying a substrate. The amorphous layer of hafnium oxide is doped with a dopant having the chemical formulation LnOx, where Ln is lanthanum, a lanthanide-series metal, or a combination thereof, and X is any number greater than zero. The doping step may be performed during or after growth of the amorphous layer of hafnium oxide.