Abstract: Provided are novel compositions of current compliance layers (CCLs) as well as novel methods of fabricating such CCLs and novel architectures of arranging CCLs and memory cells in memory arrays. A CCL may comprise one of sulfur (S), selenium (Se), and tellurium (Te). The CCL may further comprise one of germanium (Ge) and silicon (Si). CCLs may be fabricated as amorphous structure and remain amorphous when heated to 400° C. or 450° C. and above. In some embodiments, CCLs have crystallization temperatures of greater than 400° C. and, in some embodiments, glass transition temperatures of greater than 400° C. CCLs may be fabricated using atomic layer deposition (ALD) as a nanolaminate of layers having different compositions. The composition, number, and arrangement of the layers in the nanolaminate is specifically selected to yield a desired composition of CCL.

Abstract: Provided are novel compositions of current compliance layers (CCLs) as well as novel methods of fabricating such CCLs and novel architectures of arranging CCLs and memory cells in memory arrays. A CCL may comprise one of sulfur (S), selenium (Se), and tellurium (Te). The CCL may further comprise one of germanium (Ge) and silicon (Si). CCLs may be fabricated as amorphous structure and remain amorphous when heated to 400° C. or 450° C. and above. In some embodiments, CCLs have crystallization temperatures of greater than 400° C. and, in some embodiments, glass transition temperatures of greater than 400° C. CCLs may be fabricated using atomic layer deposition (ALD) as a nanolaminate of layers having different compositions. The composition, number, and arrangement of the layers in the nanolaminate is specifically selected to yield a desired composition of CCL.

Abstract: Provided are novel compositions of current compliance layers (CCLs) as well as novel methods of fabricating such CCLs and novel architectures of arranging CCLs and memory cells in memory arrays. A CCL may comprise one of sulfur (S), selenium (Se), and tellurium (Te). The CCL may further comprise one of germanium (Ge) and silicon (Si). CCLs may be fabricated as amorphous structure and remain amorphous when heated to 400° C. or 450° C. and above. In some embodiments, CCLs have crystallization temperatures of greater than 400° C. and, in some embodiments, glass transition temperatures of greater than 400° C. CCLs may be fabricated using atomic layer deposition (ALD) as a nanolaminate of layers having different compositions. The composition, number, and arrangement of the layers in the nanolaminate is specifically selected to yield a desired composition of CCL.

Abstract: Provided are novel compositions of current compliance layers (CCLs) as well as novel methods of fabricating such CCLs and novel architectures of arranging CCLs and memory cells in memory arrays. A CCL may comprise one of sulfur (S), selenium (Se), and tellurium (Te). The CCL may further comprise one of germanium (Ge) and silicon (Si). CCLs may be fabricated as amorphous structure and remain amorphous when heated to 400° C. or 450° C. and above. In some embodiments, CCLs have crystallization temperatures of greater than 400° C. and, in some embodiments, glass transition temperatures of greater than 400° C. CCLs may be fabricated using atomic layer deposition (ALD) as a nanolaminate of layers having different compositions. The composition, number, and arrangement of the layers in the nanolaminate is specifically selected to yield a desired composition of CCL.

Abstract: Provided are selector elements with active components comprising insulating matrices and mobile ions disposed within these insulating matrices. Also provided are methods of operating such selector elements. The insulating matrices and mobile ions may be formed from different combinations of materials. For example, the insulating matrix may comprise amorphous silicon or silicon oxide, while mobile ions may be silver ions. In another example, the active component comprises copper and germanium, selenium, or tellerium, e.g., Se61Cu39, Se67Cu33, or Se56Cu44. The active component may be a multilayered structure with a variable composition throughout the structure. For example, the concentration of mobile ions may be higher in a center of the structure, away from the electrode interfaces. In some embodiments, outer layers may be formed from Ge33Se24Cu47, while the middle layer may be formed from Ge47Se29Cu24.