Patents by Inventor SERGEY V. FALEEV

SERGEY V. FALEEV has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • TERMINATION LAYER-COMPENSATED TUNNELING MAGNETORESISTANCE IN FERRIMAGNETIC HEUSLER COMPOUNDS WITH HIGH PERPENDICULAR MAGNETIC ANISOTROPY
    Publication number: 20170125045
    Abstract: A layered stack includes a first layer having a first spin polarization and a first magnetic moment, as well as a second layer (in contact with the first layer) having a second spin polarization a second magnetic moment. The first and second spin polarizations have the same orientation, but the first and second magnetic moments have orientations that partially cancel each other, thereby recommending the layered stack for applications in magnetic tunnel junctions, for example.
    Type: Application
    Filed: October 28, 2015
    Publication date: May 4, 2017
    Inventors: SERGEY V. FALEEV, JAEWOO JEONG, STUART S.P. PARKIN, MAHESH G. SAMANT