Abstract: A method for realizing a grating structure including the steps of providing a layered structure having a substrate, a grating layer, a first masking layer of polysilicon, a dielectric layer and a second masking layer. Additionally, a resist layer is deposited on the second masking layer; the resist layer is exposed according to a selected pattern to an electron beam; the resist layer is developed according to the pattern; the second masking layer is etched using the developed resist layer as a mask to form a patterned second masking layer; the dielectric layer is etched using the patterned second masking layer as a hard mask to form a patterned dielectric layer; the first masking layer is etched using the patterned dielectric layer as a hard mask to form a patterned first masking layer; and the grating layer is etched using the patterned first masking layer as a hard mask to form the grating structure.

Abstract: A pressure sensor, particularly for use in extruders of plastic materials, having an outer enclosure containing a supporting element for a semiconductor chip which is provided with a strain-gauge on one of opposite faces of the chip, a covering element in order to close the enclosure, a mechanical transmission element accommodated in the covering element, directed toward the semiconductor chip and in contact with the chip, the semiconductor chip being accommodated so as to float in the supporting element.