Abstract: In one example, an apparatus comprises a semiconductor integrated circuit, the semiconductor integrated circuit including a microelectromechanical system (MEMS) device layer and a silicon substrate, the MEMS device layer including at least one micro-mirror assembly, the at least one micro-mirror assembly including a micro-mirror and electrodes. The at least one micro-mirror assembly further includes a light reduction layer on the silicon substrate. A method of fabricating the semiconductor integrated circuit is also provided.

Abstract: In one example, an apparatus comprises a semiconductor integrated circuit, the semiconductor integrated circuit including a microelectromechanical system (MEMS) device layer, an oxide layer, and a silicon substrate, the oxide layer being sandwiched between the MEMS device layer and the silicon substrate, the MEMS device layer including at least one micro-mirror assembly, the at least one micro-mirror assembly including a micro-mirror and electrodes. The at least one micro-mirror assembly further includes a light reduction layer between at least a part of the MEMS device layer and the oxide layer. A method of fabricating the semiconductor integrated circuit is also provided.

Abstract: In one example, an apparatus comprises a semiconductor integrated circuit, the semiconductor integrated circuit including a microelectromechanical system (MEMS) device layer and a silicon substrate, the MEMS layer including at least one micro-mirror assembly, the at least one micro-mirror assembly including a micro-mirror and electrodes. The at least one micro-mirror assembly further includes a light reduction layer formed below a surface of the silicon substrate. A method of fabricating the semiconductor integrated circuit is also provided.