Abstract: The application relates to co-packaged controlled overcurrent handling of a power switch assembly. The power switch assembly includes a power switch and an overcurrent handling logic. The overcurrent handling logic includes an overcurrent detection circuit configured to detect an overcurrent condition of a load current of the power switch and to provide an overcurrent detection signal indicative of an overcurrent condition of the load current of the power switch and a discharge current generation circuit coupled to the overcurrent detection circuit, and configured to generate a discharge current to at least partially discharge a control terminal of the power switch responsive to the overcurrent detection signal.

Abstract: A gate driver circuit includes a high-side region that operates in a first voltage domain; a low-side region that operates in a second voltage domain lower than the first voltage domain; a gate driver configured to drive a power switch between an on-state and an off-state; at least one capacitor cross-coupled to the high-side region and the low-side region; a sensing circuit coupled to the at least one capacitor and configured to provide a sense value representative of a voltage transient of the power switch; a comparator circuit configured to compare the sense value to a threshold, and further configured to generate a comparison result based on whether the sense value satisfies the threshold; and a short circuit detector configured to detect a short circuit event based on the on-state of the power switch being detected and based on the comparison result indicating that the sense value satisfies the threshold.

Abstract: This invention pertains to the design of a novel Gallium Nitride (GaN) High Electron Mobility Transistor (HEMT) with multiple metal contacts to a single contiguous p-GaN island. The invention encompasses various embodiments which introduce innovative mechanisms for threshold voltage (Vth) control through hole injection and removal.

Abstract: An enhancement mode gallium nitride (GaN) transistor configured to eliminate holes in the gate material under the gate metal. The transistor has four electrodes, namely a drain electrode, a source electrode, a gate electrode and a hole collector electrode. In a preferred embodiment, a negative voltage is applied to the hole collector electrode, attracting holes in the gate material under the gate metal. The attracted holes recombine with electrons supplied by the negative voltage, thereby substantially eliminating the holes.

Abstract: A gate driver circuit includes a high-side region that operates in a first voltage domain; a low-side region that operates in a second voltage domain lower than the first voltage domain; a gate driver configured to drive a power switch between an on-state and an off-state; at least one capacitor cross-coupled to the high-side region and the low-side region; a sensing circuit coupled to the at least one capacitor and configured to provide a sense value representative of a voltage transient of the power switch; a comparator circuit configured to compare the sense value to a threshold, and further configured to generate a comparison result based on whether the sense value satisfies the threshold; and a short circuit detector configured to detect a short circuit event based on the on-state of the power switch being detected and based on the comparison result indicating that the sense value satisfies the threshold.

Abstract: An enhancement mode gallium nitride (GaN) transistor with a p-type gate configured to eliminate holes accumulating under the gate metal. The gate has two electrodes, a gate electrode and a hole collector electrode. In a preferred embodiment, a negative voltage is applied to the hole collector electrode, attracting holes accumulating under the gate metal. The attracted holes recombine with electrons supplied by the negative voltage, thereby substantially eliminating the holes.

Abstract: The application relates to co-packaged controlled overcurrent handling of a power switch assembly. The power switch assembly includes a power switch and an overcurrent handling logic. The overcurrent handling logic includes an overcurrent detection circuit configured to detect an overcurrent condition of a load current of the power switch and to provide an overcurrent detection signal indicative of an overcurrent condition of the load current of the power switch and a discharge current generation circuit coupled to the overcurrent detection circuit, and configured to generate a discharge current to at least partially discharge a control terminal of the power switch responsive to the overcurrent detection signal.

Abstract: A method for driving a power transistor includes comparing a measurement signal that is representative of a load current to a comparator threshold that corresponds to an overcurrent threshold; generating a first fault signal when the measurement signal exceeds the comparator threshold for a first time interval; generating a second fault signal when the measurement signal exceeds the comparator threshold for a second time interval that is greater than the first time interval; regulating a control voltage provided to the control terminal of the transistor to turn off the transistor in response to the second fault signal; and in response to the first fault signal, adjusting the control voltage to an adjusted voltage level in order to limit the load current to a reduced current level that is preconfigured to be greater than the overcurrent threshold. The adjusted voltage level is sufficient to maintain the power transistor in an on-state.

Abstract: A method for driving a power transistor includes comparing a measurement signal that is representative of a load current to a comparator threshold that corresponds to an overcurrent threshold; generating a first fault signal when the measurement signal exceeds the comparator threshold for a first time interval; generating a second fault signal when the measurement signal exceeds the comparator threshold for a second time interval that is greater than the first time interval; regulating a control voltage provided to the control terminal of the transistor to turn off the transistor in response to the second fault signal; and in response to the first fault signal, adjusting the control voltage to an adjusted voltage level in order to limit the load current to a reduced current level that is preconfigured to be greater than the overcurrent threshold. The adjusted voltage level is sufficient to maintain the power transistor in an on-state.

Abstract: A method for driving a power transistor includes comparing a measurement signal that is representative of a load current to a comparator threshold that corresponds to an overcurrent threshold; generating a first fault signal when the measurement signal exceeds the comparator threshold for a first time interval; generating a second fault signal when the measurement signal exceeds the comparator threshold for a second time interval that is greater than the first time interval; regulating a control voltage provided to the control terminal of the transistor to turn off the transistor in response to the second fault signal; and in response to the first fault signal, adjusting the control voltage to an adjusted voltage level in order to limit the load current to a reduced current level that is preconfigured to be greater than the overcurrent threshold. The adjusted voltage level is sufficient to maintain the power transistor in an on-state.

Abstract: An apparatus may include an electric power converter and pre-charge circuitry. The electric power converter may include a first circuit, a second circuit and an energy transfer device. The first circuit may be connected to a power supply. The second circuit may be connected to a load. The energy transfer device may have a first side connected to the first circuit and a second side connected to the second circuit. The pre-charge circuitry may be connected to a capacitor of the first circuit. The capacitor may be connected to the first side of the energy transfer device. The pre-charge circuitry may be configured to charge the capacitor during a pre-charge mode of the electric power converter. The electric power converter may be configured to exit the pre-charge mode and enter an energy transfer mode responsive to a charge level of the capacitor reaching a threshold pre-charge level.

Abstract: A gate driver communication system includes a cored transformer including a primary coil and a secondary coil configured to receive power signals and uplink data signals from the primary coil; a primary side power signal generator coupled to the primary coil and configured to generate the power signals having a first frequency; a primary side data transmitter coupled to the primary coil and configured to generate the uplink data signals having a second frequency different from the first frequency; and a primary side controller configured to allocate the power signals and the uplink data signals to the primary coil according to a plurality of time slots, wherein the power signals are allocated to first time slots of the plurality of time slots and the uplink data signals are allocated to second times slots of the plurality of time slots.

Abstract: A gate driver communication system includes a cored transformer including a primary coil and a secondary coil configured to receive power signals and uplink data signals from the primary coil; a primary side power signal generator coupled to the primary coil and configured to generate the power signals having a first frequency; a primary side data transmitter coupled to the primary coil and configured to generate the uplink data signals having a second frequency different from the first frequency; and a primary side controller configured to allocate the power signals and the uplink data signals to the primary coil according to a plurality of time slots, wherein the power signals are allocated to first time slots of the plurality of time slots and the uplink data signals are allocated to second times slots of the plurality of time slots.

Abstract: An apparatus may include an electric power converter and pre-charge circuitry. The electric power converter may include a first circuit, a second circuit and an energy transfer device. The first circuit may be connected to a power supply. The second circuit may be connected to a load. The energy transfer device may have a first side connected to the first circuit and a second side connected to the second circuit. The pre-charge circuitry may be connected to a capacitor of the first circuit. The capacitor may be connected to the first side of the energy transfer device. The pre-charge circuitry may be configured to charge the capacitor during a pre-charge mode of the electric power converter. The electric power converter may be configured to exit the pre-charge mode and enter an energy transfer mode responsive to a charge level of the capacitor reaching a threshold pre-charge level.

Abstract: A gate driver includes a high-side region that operates in a first voltage domain, a low-side region that operations in a second voltage domain lower than the first voltage domain, a termination region interposed between the high-side region and the low-side region and configured to isolate the first voltage domain from the second voltage domain, a high-side gate driver disposed in the high-side region and configured to drive a high-side power transistor, a low-side gate driver disposed in the low-side region and configured to drive a low-side power transistor, and a plurality of termination diodes disposed in the termination region and configured to transmit information bits between the high-side region and the low-side region, where each of the plurality of termination diodes includes an anode coupled to the low-side region and a cathode coupled to the high-side region.

Abstract: A gate driver circuit includes a gate driver and a sensing circuit. The gate driver is configured to generate an on-current during a plurality of turn-on switching events to drive a transistor, where a voltage across the transistor changes from a first value to a second value with a slope during the plurality of turn-on switching events, where the slope is of either an active type dependent on an amplitude of the on-current or a passive type. The sensing circuit determines whether the slope during a first turn-on switching event is the active type or the passive type, and regulates the amplitude of the on-current during a second turn-on switching event that is subsequent to the first turn-on switching event if the slope is the active type and to maintain the amplitude of the on-current as unchanged during the second turn-on switching event if the slope is the passive type.

Abstract: A gate driver circuit includes a gate driver and a sensing circuit. The gate driver is configured to generate an on-current during a plurality of turn-on switching events to drive a transistor, where a voltage across the transistor changes from a first value to a second value with a slope during the plurality of turn-on switching events, where the slope is of either an active type dependent on an amplitude of the on-current or a passive type. The sensing circuit determines whether the slope during a first turn-on switching event is the active type or the passive type, and regulates the amplitude of the on-current during a second turn-on switching event that is subsequent to the first turn-on switching event if the slope is the active type and to maintain the amplitude of the on-current as unchanged during the second turn-on switching event if the slope is the passive type.

Abstract: A gate driver includes a high-side region that operates in a first voltage domain, a low-side region that operations in a second voltage domain lower than the first voltage domain, a termination region interposed between the high-side region and the low-side region and configured to isolate the first voltage domain from the second voltage domain, a high-side gate driver disposed in the high-side region and configured to drive a high-side power transistor, a low-side gate driver disposed in the low-side region and configured to drive a low-side power transistor, and a plurality of termination diodes disposed in the termination region and configured to transmit information bits between the high-side region and the low-side region, where each of the plurality of termination diodes includes an anode coupled to the low-side region and a cathode coupled to the high-side region.

Abstract: A gate driver circuit includes a gate driver and a sensing circuit. The gate driver is configured to generate an on-current during a plurality of turn-on switching events to drive a transistor, where a voltage across the transistor changes from a first value to a second value with a slope during the plurality of turn-on switching events, where the slope is of either an active type dependent on an amplitude of the on-current or a passive type. The sensing circuit determines whether the slope during a first turn-on switching event is the active type or the passive type, and regulates the amplitude of the on-current during a second turn-on switching event that is subsequent to the first turn-on switching event if the slope is the active type and to maintain the amplitude of the on-current as unchanged during the second turn-on switching event if the slope is the passive type.

Abstract: In some examples, a device includes a first conductive region and a second conductive region that is galvanically isolated from the first conductive region. The device further includes one or more conductors, wherein each conductor of the one or more conductors is electrically connected to circuitry in the first conductive region. The device also includes a giant magnetoresistive (GMR) sensor electrically connected to circuitry in the second conductive region and magnetically coupled to the one or more conductors, wherein the GMR sensor is positioned at least partially lateral relative to the one or more conductors.