Abstract: Shielded device packages and related fabrication methods are provided. An exemplary device package includes one or more electrical components, a molding compound overlying the one or more electrical components, a conductive interconnect structure within the molding compound, a conductive frame structure laterally surrounding the one or more electrical components and the interconnect structure, and a shielding structure overlying the one or more electrical components. The shielding structure is electrically connected to the frame structure and at least a portion of the molding compound resides between the shielding structure and the one or more electrical components.

Abstract: Shielded device packages and related fabrication methods are provided. An exemplary device package includes one or more electrical components, a molding compound overlying the one or more electrical components, a conductive interconnect structure within the molding compound, a conductive frame structure laterally surrounding the one or more electrical components and the interconnect structure, and a shielding structure overlying the one or more electrical components. The shielding structure is electrically connected to the frame structure and at least a portion of the molding compound resides between the shielding structure and the one or more electrical components.

Abstract: An impedance matching network is integrated on a first die and coupled to a second die, with the first and second dies mounted on a conductive back plate. The impedance matching network comprises a first inductor bridging between the first and second dies, a second inductor coupled to the first inductor and disposed on the first die, and a metal-insulator-metal (MIM) capacitor disposed on the first die. The MIM capacitor has a first metal layer coupled to the second inductor, and a second metal layer grounded to the conductive back plate. A method for manufacturing the integrated impedance matching network comprises the steps of forming an inductor on a die, forming a capacitor on the die, coupling the capacitor to the inductor, coupling the die bottom surface and the capacitor to a conductive plate, and coupling the inductor to another inductor that bridges between the die and another die.

Abstract: An impedance matching network is integrated on a first die and coupled to a second die, with the first and second dies mounted on a conductive back plate. The impedance matching network comprises a first inductor bridging between the first and second dies, a second inductor coupled to the first inductor and disposed on the first die, and a metal-insulator-metal (MIM) capacitor disposed on the first die. The MIM capacitor has a first metal layer coupled to the second inductor, and a second metal layer grounded to the conductive back plate. A method for manufacturing the integrated impedance matching network comprises the steps of forming an inductor on a die, forming a capacitor on the die, coupling the capacitor to the inductor, coupling the die bottom surface and the capacitor to a conductive plate, and coupling the inductor to another inductor that bridges between the die and another die.