Patents by Inventor Sergiy Navala

Sergiy Navala has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Publication number: 20120222741
    Abstract: This application discloses silicon solar cells manifesting enhanced light induced degradation characteristics. The application also discloses silicon solar cells with a silicon-based substrate comprising boron, oxygen and carbon, and an antireflective coating (ARC) containing at least one carbon-containing layer adjacent to the substrate. Also disclosed are methods for preparing solar cells.
    Type: Application
    Filed: September 17, 2010
    Publication date: September 6, 2012
    Applicant: L'Air Liquide, Societe Anonyme pour I'Etude et I'Exploitation des Procedes Georges Claude
    Inventors: Michael Davies, Junegie Hong, Genowefa Jakubowska-Okoniewski, Sergiy Navala, Xiaoming Yang, Ajeet Rohatgi, Moon Hee Kang, Abasifreke Udo Ebong, Brian Charles Rounsaville
  • Publication number: 20050173069
    Abstract: Provided is a microwave plasma generating apparatus using a multiple open-ended cavity resonator, and a plasma processing apparatus including the microwave plasma generating apparatus. The plasma processing apparatus includes a container for forming a process chamber, a support unit that supports a material to be processed in the process chamber, a dielectric window formed on an upper part of the process chamber, a gas supply unit that inject a process gas into the process chamber, and a microwave supply unit that includes a plurality of resonators for supplying microwaves through the dielectric window.
    Type: Application
    Filed: September 1, 2004
    Publication date: August 11, 2005
    Applicant: Samsung Electronics Co., Ltd.
    Inventors: Yuri Tolmachev, Dong-joon Ma, Dae-il Kim, Sergiy Navala
  • Publication number: 20050103623
    Abstract: Provided is an ionized physical vapor deposition (IPVD) apparatus having a helical self-resonant coil. The IPVD apparatus comprises a process chamber having a substrate holder that supports a substrate to be processed, a deposition material source that supplies a material to be deposited on the substrate into the process chamber, facing the substrate holder, a gas injection unit to inject a process gas into the process chamber, a bias power source that applies a bias potential to the substrate holder, a helical self-resonant coil that produces plasma for ionization of the deposition material in the process chamber, one end of the helical self-resonant coil being grounded and the other end being electrically open, and an RF generator to supply an RF power to the helical self-resonant coil. The use of a helical self-resonant coil enables the IPVD apparatus to ignite and operate at very low chamber pressure such as approximately 0.
    Type: Application
    Filed: September 2, 2004
    Publication date: May 19, 2005
    Applicant: Samsung Electronics Co., Ltd.
    Inventors: Yuri Tolmachev, Dong-joon Ma, Sergiy Navala, Dae-il Kim