Abstract: Provided is an apparatus that includes a first reservoir system including a first fluid reservoir configured to be in fluid communication with a nozzle supply system during operation of the nozzle supply system, a second reservoir system including a second fluid reservoir configured to be, at least part of the time during operation of the nozzle supply system, in fluid communication with the first reservoir system, a priming system configured to produce a fluid target material from a solid matter, and a fluid control system fluidly connected to the priming system, the first reservoir system, the second reservoir system, and the nozzle supply system. The fluid control system is configured to, during operation of the nozzle supply system: isolate at least one fluid reservoir and the nozzle supply system from the priming system, and maintain a fluid flow path between at least one fluid reservoir and the nozzle supply system.

Abstract: A target material supply apparatus includes: first and second fluid flow components (1122, 1126) that define an axial flow path when joined together, in which the axial flow path is between a source of target material fluid and a nozzle supply apparatus; and a coupling apparatus configured to seal the joint between the first and second fluid flow components. The coupling apparatus includes a gasket (1105) having an annular shape defining an inner opening that is a part of the axial flow path when seated and sealed. When the gasket is seated between the first and second fluid flow components to thereby seal the joint formed by attaching the first and second fluid flow components, pressure applied to the gasket from target material fluid traversing the gasket inner opening along the axial flow path improves the hermetic function of the seal at the joint. Optionally, a functional insert like e.g. a flow restrictor (1160) can be seated in the gasket.

Abstract: Provided is an apparatus that includes a first reservoir system including a first fluid reservoir configured to be in fluid communication with a nozzle supply system during operation of the nozzle supply system, a second reservoir system including a second fluid reservoir configured to be, at least part of the time during operation of the nozzle supply system, in fluid communication with the first reservoir system, a priming system configured to produce a fluid target material from a solid matter, and a fluid control system fluidly connected to the priming system, the first reservoir system, the second reservoir system, and the nozzle supply system. The fluid control system is configured to, during operation of the nozzle supply system: isolate at least one fluid reservoir and the nozzle supply system from the priming system, and maintain a fluid flow path between at least one fluid reservoir and the nozzle supply system.

Abstract: Embodiments of the present invention generally provide a method for detecting the position of a substrate within a processing chamber. Embodiments of the present invention are particularly useful for the detection of a mis-positioned solar cell substrate during photoabsorber layer deposition processes within a solar cell production line. Reflected power is measured during processing of a substrate and communicated to a system controller. The system controller compares the measured reflected power with an established range of reflected power. If the measured reflected power is substantially out of range, the system controller signals for the chamber to be taken offline for inspection, maintenance, and/or repair. The system controller may further divert the flow of substrates within the production line around the offline chamber without shutting down the entire solar cell production line.

Abstract: A method of conditioning a CMP polishing pad to attain a desired thickness profile in a polished layer on a wafer is disclosed. The incoming thickness profile of the layer to be polished, the thickness profile of the polishing pad, a polish rate of layer as a function of pressure and the removal rate of polishing pad material by a conditioning block are used to compute a sweep pattern for the conditioning block which will produce a desired thickness profile on the polishing pad. The method may be applied to maintaining the desired profile on the polishing pad during the course of polishing multiple wafers. The pad profile may be adjusted to keep pressure between the pad and the wafer to a safe limit to reduce polishing defects.

Abstract: A method of conditioning a CMP polishing pad to attain a desired thickness profile in a polished layer on a wafer is disclosed. The incoming thickness profile of the layer to be polished, the thickness profile of the polishing pad, a polish rate of layer as a function of pressure and the removal rate of polishing pad material by a conditioning block are used to compute a sweep pattern for the conditioning block which will produce a desired thickness profile on the polishing pad. The method may be applied to maintaining the desired profile on the polishing pad during the course of polishing multiple wafers. The pad profile may be adjusted to keep pressure between the pad and the wafer to a safe limit to reduce polishing defects.