Abstract: A four-terminal switch, and a switching lattice comprising four-terminal switches. The four-terminal switch operates and is fabricated according to the principles of complementary metal oxide semiconductor (CMOS) technology. The four-terminal switch includes a bulk layer; a single transistor channel located at a surface of the bulk layer; and four diffusion regions positioned around the single transistor channel. The single transistor channel is a single H shaped transistor channel and the four diffusion regions are positioned around the single H shaped transistor channel.

Abstract: A four-terminal switch, and a switching lattice comprising four-terminal switches. The four-terminal switch operates and is fabricated according to the principles of complementary metal oxide semiconductor (CMOS) technology. The four-terminal switch includes a bulk layer; a single transistor channel located at a surface of the bulk layer; and four diffusion regions positioned around the single transistor channel. The single transistor channel is a single H shaped transistor channel and the four diffusion regions are positioned around the single H shaped transistor channel.

Abstract: The invention relates to a device, named four-terminal switch, and a switching lattice comprising four-terminal switches. A four-terminal switch operates and can be fabricated according to the principles of complementary metal oxide semiconductor (CMOS) technology. However, it has four source/drain terminals as opposed to two terminals in conventional MOS devices; it is able to conduct current in two dimensions between four terminals as opposed to one-dimensional current flow in conventional MOS devices; and it is able to form dense switching lattice structures for area efficiency.