Abstract: A method of fabricating a 3D chip stack uses an interposer and an electronic circuit substrate comprising a plurality of electronic circuits. The electrical contacts of the electronic circuit substrate are bonded and electrically coupled to bumps of the interposer. A molding compound is applied over the electronic circuits to form a molded structure. The molded structure is thinned to have a second molded thickness that is less than the first molded thickness, and the interposer is thinned to a second interposer thickness that is less than a first interposer thickness.

Abstract: A through-silicon via fabrication method includes etching a plurality of through holes in a silicon plate. An oxide liner is deposited on the surface of the silicon plate and on the sidewalls and bottom wall of the through holes. A metallic conductor is then deposited in the through holes. In another version, which may be used concurrently with the oxide liner, a silicon nitride passivation layer is deposited on the exposed back surface of the silicon plate of the substrate.

Abstract: A through-silicon via fabrication method comprises forming a substrate by bonding the front surface of a silicon plate to a carrier using an adhesive layer therebetween to expose the back surface of the silicon plate. A silicon nitride passivation layer is deposited on the exposed back surface of the silicon plate of the substrate. A plurality of through holes are etched in the silicon plate, the through holes comprising sidewalls and bottom walls. A metallic conductor is deposited in the through holes to form a plurality of through-silicon vias.

Abstract: A through-silicon via fabrication method includes etching a plurality of through holes in a silicon plate. An oxide liner is deposited on the surface of the silicon plate and on the sidewalls and bottom wall of the through holes. A metallic conductor is then deposited in the through holes. In another version, which may be used concurrently with the oxide liner, a silicon nitride passivation layer is deposited on the exposed back surface of the silicon plate of the substrate.

Abstract: A through-silicon via fabrication method comprises forming a substrate by bonding the front surface of a silicon plate to a carrier using an adhesive layer therebetween to expose the back surface of the silicon plate. A silicon nitride passivation layer is deposited on the exposed back surface of the silicon plate of the substrate. A plurality of through holes are etched in the silicon plate, the through holes comprising sidewalls and bottom walls. A metallic conductor is deposited in the through holes to form a plurality of through-silicon vias.

Abstract: An apparatus and method for sputter depositing a magnetic film on a substrate to produce a magnetic device such as magnetic recording heads for reading digital information from a storage medium. The apparatus of the invention includes a sputtering chamber containing a target and a substrate, and a magnet array disposed within the chamber to form a substantially parallel magnetic field at a surface of the substrate. The sputtering chamber reduces interference between the magnetron and the magnet array by providing a long throw distance and/or a grounded collimator. The magnet array is preferably a circular ring.

Abstract: The present invention provides a method for improving the adhesion of copper and other metal-comprising conductive metals to a barrier layer. A barrier is provided that has a first surface that is substantially unoxidized, wherein at least a portion of the surface is free from the presence of oxygen atoms. A conductive layer is then deposited onto the first surface of the barrier layer. The substantially unoxidized state of the first surface enhances the adhesion of the metal-comprising layer to the barrier layer. The method is particularly useful in obtaining excellent adhesion of a copper nucleation layer to an underlying barrier layer surface.

Abstract: The present invention provides a method for improving the adhesion of copper and other metal-comprising conductive metals to a barrier layer. A barrier layer is provided that has a first surface that is substantially unoxidized, wherein at least a portion of the first surface is free from the presence of oxygen atoms. A conductive layer is then deposited onto the first surface of the barrier layer. The substantially unoxidized state of the first surface enhances the adhesion of the metal-comprising layer to the barrier layer. The method is particularly useful in obtaining excellent adhesion of a copper nucleation layer to an underlying barrier layer surface.