Patents by Inventor Seshu Babu Desu

Seshu Babu Desu has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Patent number: 5887117
    Abstract: A device and method for flash evaporating a reagent includes an evaporation chamber that houses a dome on which evaporation occurs. The dome is solid and of high thermal conductivity and mass, and may be heated to a temperature sufficient to vaporize a specific reagent. The reagent is supplied from an external source to the dome through a nozzle, and may be supplied as a continuous stream, as a shower, and as discrete drops. A carrier gas may be introduced into the evaporation chamber and create a vortex flow therewithin. After evaporation, the gas vapor may be removed from the evaporation chamber through a regulating valve to a reaction chamber. Another embodiment of the invention includes a plurality of evaporating domes that separately receive reagent, and may receive reagents of differing composition.
    Type: Grant
    Filed: January 2, 1997
    Date of Patent: March 23, 1999
    Assignees: Sharp Kabushiki Kaisha, Virginia Tech Intellectual Properties, Inc.
    Inventors: Seshu Babu Desu, Sasangan Ramanathan, Carlos Tres Avala Suchicital
  • Patent number: 5817160
    Abstract: UV absorbing glass is prepared by mixing ultrafine colloidal cerium oxide with glass-forming substances during the fabrication of the glass. An aqueous colloidal dispersion containing 1-20 weight percent 10-20 nm cerium oxide particles, optionally including a binder, is admixed with silica sand, and the sand is dried, melted and cooled to give a relatively clear UV absorbing glass containing 0.3-2 weight percent cerium oxide.
    Type: Grant
    Filed: May 7, 1996
    Date of Patent: October 6, 1998
    Assignee: The Center for Innovative Technology
    Inventors: Vidhu Jaikishen Nagpal, Seshu Babu Desu, Richey McLane Davis
  • Patent number: 5751540
    Abstract: A ferroelectric capacitor used as a memory cell in a ferroelectric random access memory (FRAM) is provided. The ferroelectric capacitor includes a substrate, an insulating layer formed on the substrate, a Rh lower electrode provided on the insulating layer, an adhesive layer between the insulating layer and the lower electrode, a ferroelectric layer provided on the lower electrode, and a Rh upper electrode provided on the ferroelectric layer. The Rh used as the electrode material is not affected by diffusion of Si due to its fine structure when compared to a Pt electrode, and has excellent electrical properties due to better electrical conductivity and good heat-transfer properties.
    Type: Grant
    Filed: March 19, 1996
    Date of Patent: May 12, 1998
    Assignee: Samsung Electronics Co., Ltd.
    Inventors: June-key Lee, Il-sub Chung, Seshu Babu Desu